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MURF10060R

P1-P2
V
RRM
= 50 V - 600 V
I
F
= 100 A
Features
• High Surge Capability TO-244AB Package
• Types up to 600 V V
RRM
Parameter Symbol MURF10040 (R) Unit
Re
p
etitive
p
eak reverse
V
400
V
MURF10040 thru MURF10060R
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Conditions
Silicon Super Fast
Recover
y
Diode
MURF10060 (R)
600
pp
voltage
V
RRM
400
V
RMS reverse voltage
V
RMS
280 V
DC blocking voltage
V
DC
400 V
Continuous forward current
I
F
100 A
Operating temperature
T
j
-40 to 175 °C
Storage temperature
T
stg
-40 to 175 °C
Parameter Symbol MURF10040 (R) Unit
Diode forward voltage 1.3
25 μA
1mA
Recovery Time
Maximum reverse recovery
time
T
RR
90 nS
I
F
=0.5 A, I
R
=1.0 A,
I
RR
= 0.25 A
V
R
= 50 V, T
j
= 125 °C
V
1
110
A
V
R
= 50 V, T
j
= 25 °C
I
F
= 50 A, T
j
= 25 °C
T
C
≤ 140 °C
Conditions
400
T
C
= 25 °C, t
p
= 8.3 ms
25
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive forward
current, Half Sine Wave
I
F,SM
Reverse current
I
R
V
F
100
400
-40 to 175
-40 to 175
1.7
MURF10060 (R)
600
420
600
www.genesicsemi.com
1
MURF10040 thru MURF10060R
www.genesicsemi.com
2
P1-P2

MURF10060R

Mfr. #:
Buy MURF10060R
Manufacturer:
GeneSiC Semiconductor
Description:
Rectifiers SI S-FST REC TO244AB 50-600V100A600P/420R
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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