Expand menu
Hello, Sign in
My Account
0
Cart
Home
Products
Sensors
Semiconductors
Passive Components
Connectors
Power
Electromechanical
Optoelectronics
Circuit Protection
Integrated Circuits - ICs
Main Products
Manufacturers
Blog
Services
About OMO
About Us
Contact Us
Check Stock
PBSS5360ZX
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
NXP Semiconductors
PBSS5360Z
60 V
, 3 A PNP low VCEsat (BISS) transistor
PBSS5360Z
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2014. All rights reserved
Product data sheet
19 February 2014
6 / 14
10.
Characteristics
T
able 7.
Characteristics
Symbol
Parameter
Conditions
Min
T
yp
Max
Unit
V
CB
= -48 V; I
E
= 0 A; T
amb
= 25 °C
-
-
-100
nA
I
CBO
collector-base cut-off
current
V
CB
= -48 V; I
E
= 0 A; T
j
= 150 °C
-
-
-50
µA
I
CES
collector-emitter cut-off
current
V
CE
= -48 V; V
BE
= 0 V; T
amb
= 25 °C
-
-
-100
nA
I
EBO
emitter-base cut-off
current
V
EB
= -5 V; I
C
= 0 A; T
amb
= 25 °C
-
-
-100
nA
V
CE
= -5 V; I
C
= -50 mA; T
amb
= 25 °C
150
-
-
V
CE
= -5 V; I
C
= -500 mA; T
amb
= 25 °C
130
-
-
V
CE
= -5 V; I
C
= -1 A; T
amb
= 25 °C
120
-
-
V
CE
= -5 V; I
C
= -2 A; t
p
≤ 300 µs;
δ ≤ 0.02; T
amb
= 25 °C; pulsed
100
-
-
h
FE
DC current gain
V
CE
= -5 V; I
C
= -3 A; t
p
≤ 300 µs;
δ ≤ 0.02; T
amb
= 25 °C; pulsed
80
-
-
I
C
= -500 mA; I
B
= -50 mA;
T
amb
= 25 °C
-
-
-150
mV
I
C
= -1 A; I
B
= -100 mA; t
p
≤ 300 µs;
δ ≤ 0.02; T
amb
= 25 °C; pulsed
-
-
-200
mV
I
C
= -2 A; I
B
= -200 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02; T
amb
= 25 °C
-
-
-450
mV
V
CEsat
collector-emitter
saturation voltage
I
C
= -3 A; I
B
= -300 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02; T
amb
= 25 °C
-
-
-550
mV
R
CEsat
collector-emitter
saturation resistance
I
C
= -2 A; I
B
= -200 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02; T
amb
= 25 °C
-
-
225
mΩ
V
BEsat
base-emitter saturation
voltage
I
C
= -1 A; I
B
= -100 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02; T
amb
= 25 °C
-
-
-1.2
V
V
BEon
base-emitter turn-on
voltage
V
CE
= -5 V; I
C
= -1 A; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02; T
amb
= 25 °C
-
-
-1.1
V
f
T
transition frequency
V
CE
= -10 V; I
C
= -50 mA; f = 100 MHz;
T
amb
= 25 °C
65
130
-
MHz
C
c
collector capacitance
V
CB
= -10 V; I
E
= 0 A; i
e
= 0 A;
f = 1 MHz; T
amb
= 25 °C
-
28
32
pF
NXP Semiconductors
PBSS5360Z
60 V
, 3 A PNP low VCEsat (BISS) transistor
PBSS5360Z
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2014. All rights reserved
Product data sheet
19 February 2014
7 / 14
aaa-010997
200
300
100
400
500
h
FE
0
I
C
(mA)
-10
-1
-10
4
-10
3
-1
-10
2
-10
(1)
(2)
(3)
V
CE
= −5 V
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 5.
DC current gain as a function of collector
current; typical values
V
CE
(V)
0
-5
-4
-2
-3
-1
aaa-010998
-1
-2
-3
I
C
(A)
0
I
B
= -25 mA
-22.5
-20
-17.5
-15
-12.5
-10
-7.5
-2.5
-5
T
amb
= 25 °C
Fig. 6.
Collector current as a function of collector-
emitter voltage; typical values
aaa-010999
-0.4
-0.8
-1.2
V
BE
(V)
0
I
C
(mA)
-10
-1
-10
4
-10
3
-1
-10
2
-10
(1)
(2)
(3)
V
CE
= −5 V
(1) T
amb
= −55 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
Fig. 7.
Base-emitter voltage as a function of collector
current; typical values
aaa-01
1000
-0.6
-0.8
-0.4
-1.0
-1.2
V
BEsat
(V)
-0.2
I
C
(mA)
-10
-1
-10
4
-10
3
-1
-10
2
-10
(1)
(2)
(3)
I
C
/I
B
= 20
(1) T
amb
= −55 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
Fig. 8.
Base-emitter saturation voltage as a function of
collector current; typical values
NXP Semiconductors
PBSS5360Z
60 V
, 3 A PNP low VCEsat (BISS) transistor
PBSS5360Z
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2014. All rights reserved
Product data sheet
19 February 2014
8 / 14
aaa-01
1001
I
C
(mA)
-10
-1
-10
4
-10
3
-1
-10
2
-10
-10
-1
-1
V
CEsat
(V)
-10
-2
(1)
(2)
(3)
I
C
/I
B
= 20
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 9.
Collector-emitter saturation voltage as a
function of collector current; typical values
I
C
(mA)
-10
-1
-10
4
-10
3
-1
-10
2
-10
aaa-01
1002
1
10
-1
10
2
10
10
3
R
CEsat
(Ω)
10
-2
(1)
(2)
(3)
I
C
/I
B
= 20
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 10.
Collector-emitter saturation resistance as a
function of collector current; typical values
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
PBSS5360ZX
Mfr. #:
Buy PBSS5360ZX
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT 60V 3A PNP low VCEsat transistor
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
T/T
Paypal
Visa
MoneyGram
Western
Union
Products related to this Datasheet
PBSS5360ZX
