RN2907FE~RN2909FE
2014-03-01
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)
RN2907FE, RN2908FE, RN2909FE
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
• Two devices are incorporated into an Extreme-Super-Mini (6-pin) package.
• Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enables the manufacture of ever more compact
equipment and lowers assembly cost.
• Complementary to RN1907FE to RN1909FE
Equivalent Circuit and Bias Resistor Values
Absolute Maximum Ratings
(Ta = 25°C)
(Q1, Q2 common)
Characteristics Symbol Rating Unit
Collector-base voltage V
CBO
−50 V
Collector-emitter voltage
RN2907FE
to 2909FE
V
CEO
−50 V
RN2907FE −6
RN2908FE −7
Emitter-base voltage
RN2909FE
V
EBO
−15
V
Collector current I
C
−100 mA
Collector power dissipation P
C
(Note 1) 100 mW
Junction temperature T
j
150 °C
Storage temperature range
RN2907FE
to 2909FE
T
stg
−55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-2N1G
Weight: 0.003 g (typ.)
Equivalent Circuit
(top view)
6 5 4
1 2 3
Q1
Q2
Type No. R1 (kΩ) R2 (kΩ)
RN2907FE 10 47
RN2908FE 22 47
RN2909FE 47 22
R1
R2
B
C
E
Start of commercial production
2000-05
