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STD50N03L

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
Electrical characteristics STD50N03L - STD50N03L-1
4/16
2 Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 3. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown
voltage
I
D
= 250µA, V
GS
= 0
30 V
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= 30V
V
DS
= 30V, Tc=125°C
1
10
µA
µA
I
GSS
Gate body leakage current
(V
DS
= 0)
V
GS
= ±20V
±100 nA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250µA
1V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10V, I
D
= 20A
V
GS
= 5V, I
D
= 20A
9.2
0.012
10.5
0.019
mΩ
Ω
Table 4. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
=25V, f=1MHz,
V
GS
=0
1434
294
48
pF
pF
pF
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 15V, I
D
= 40A
V
GS
= 5V
(see Figure 13)
10.4
5.1
3.7
14 nC
nC
nC
Q
OSS
(1)
1. Q
OSS
=C
OSS
*D V
in
; C
OSS
= C
gd
+ C
gd
. See Appendix A
Output charge
V
DS
= 24V ; V
GS
=0
12.6 nC
R
G
Gate input resistance
f=1MHz Gate Bias
Bias=0 Test signal
Level=20mV
open drain
1.1 Ω
STD50N03L - STD50N03L-1 Electrical characteristics
5/16
Table 5. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on delay time
Rise time
V
DD
=15V, I
D
= 25A,
R
G
= 4.7Ω, V
GS
= 4.5V
(see Figure 12)
15
125
ns
ns
t
d(off)
t
f
Turn-off delay time
Fall time
V
DD
= 15V, I
D
= 25A,
R
G
= 4.7Ω, V
GS
= 4.5V
(see Figure 12)
14
45
ns
ns
Table 6. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
SD
I
SDM
(1)
1. Pulse width limited by safe operating area
Source-drain current
Source-drain current
(pulsed)
40
160
A
A
V
SD
(2)
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward on voltage
I
SD
= 20A, V
GS
=0
1.3 V
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 40A, di/dt = 100A/µs,
V
DD
= 10 V, Tj = 25°C
(see Figure 17)
26
15.6
1.2
ns
nC
A
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 40A, di/dt = 100A/µs,
V
DD
= 10V, Tj= 150°C
(see Figure 17)
26.4
18.1
1.4
ns
nC
A
Electrical characteristics STD50N03L - STD50N03L-1
6/16
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Thermal impedance
Figure 3. Output characteristics Figure 4. Transfer characteristics
Figure 5. Normalized B
VDSS
vs temperature Figure 6. Static drain-source on resistance
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

STD50N03L

Mfr. #:
Buy STD50N03L
Manufacturer:
STMicroelectronics
Description:
MOSFET POWER MOSFET
Lifecycle:
New from this manufacturer.
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