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ES2AHE3/52T

P1-P3P4-P5
ES2A, ES2B, ES2C, ES2D
www.vishay.com
Vishay General Semiconductor
Revision: 25-Feb-16
1
Document Number: 88587
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount Ultrafast Plastic Rectifier
FEATURES
• Glass passivated pellet chip junction
• Ideal for automated placement
• Ultrafast recovery times for high efficiency
• Low forward voltage, low power losses
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer, automotive, and telecommunication.
MECHANICAL DATA
Case: DO-214AA (SMB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
I
F(AV)
2.0 A
V
RRM
50 V, 100 V, 150 V, 200 V
I
FSM
50 A
t
rr
20 ns
V
F
0.90 V
T
J
max. 150 °C
Package DO-214AA (SMB)
Diode variations Single die
DO-214AA (SMB)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL ES2A ES2B ES2C ES2D UNIT
Device marking code EA EB EC ED
Maximum repetitive peak reverse voltage V
RRM
50 100 150 200 V
Maximum RMS voltage V
RMS
35 70 105 140 V
Maximum DC blocking voltage V
DC
50 100 150 200 V
Maximum average forward rectified current at T
L
= 110 °C I
F(AV)
2.0 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
50 A
Operating junction and storage temperature range T
J
, T
STG
-55 to +150 °C
ES2A, ES2B, ES2C, ES2D
www.vishay.com
Vishay General Semiconductor
Revision: 25-Feb-16
2
Document Number: 88587
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse test: 300 ms pulse width, 1 % duty cycle
Note
(1)
Units mounted on PCB 5.0 mm x 5.0 mm (0.013 mm thick) land areas
Note
(1)
AEC-Q101 qualified
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL ES2A ES2B ES2C ES2D UNIT
Maximum instantaneous forward voltage 2.0 A V
F
(1)
0.90 V
Maximum DC reverse current at rated
DC blocking voltage
T
A
= 25 °C
I
R
10
μA
T
A
= 100 °C 350
Max. reverse recovery time
I
F
= 0.5 A, I
R
= 1.0 A,
l
rr
= 0.25 A
t
rr
20 ns
Maximum reverse recovery time
I
F
= 2.0 A, V
R
= 30 V,
dI/dt = 50 A/μs, I
r
= 10 % I
RM
T
J
= 25 °C
t
rr
30
ns
T
J
= 100 °C 50
Maximum stored charge
I
F
= 2.0 A, V
R
= 30 V,
dI/dt = 50 A/μs, I
r
= 10 % I
RM
T
J
= 25 °C
Q
rr
10
nC
T
J
= 100 °C 25
Typical junction capacitance 4.0 V, 1 MHz C
J
18 pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL ES2A ES2B ES2C ES2D UNIT
Typical thermal resistance
R
JA
(1)
75
°C/W
R
JL
(1)
20
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
ES2D-E3/52T 0.096 52T 750 7" diameter plastic tape and reel
ES2D-E3/5BT 0.096 5BT 3200 13" diameter plastic tape and reel
ES2DHE3/52T
(1)
0.096 52T 750 7" diameter plastic tape and reel
ES2DHE3/5BT
(1)
0.096 5BT 3200 13" diameter plastic tape and reel
ES2DHE3_A/H
(1)
0.096 H 750 7" diameter plastic tape and reel
ES2DHE3_A/I
(1)
0.096 I 3200 13" diameter plastic tape and reel
ES2A, ES2B, ES2C, ES2D
www.vishay.com
Vishay General Semiconductor
Revision: 25-Feb-16
3
Document Number: 88587
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Transient Thermal Impedance
0
3.0
80 90 100 110 120 130 140 150
Average Forward Rectified Current (A)
Lead Temperature (°C)
2.0
1.0
Resistive or Inductive Load
P.C.B. Mounted on
0.2" x 0.2" (5.0 mm x 5.0 mm)
Copper Pad Areas
0
10
20
30
40
50
60
1 10010
Peak Forward Surge Current (A)
8.3 ms Single Half Sine-Wave
at T
L
= 110 °C
Number of Cycles at 60 Hz
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 25 °C
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
100
10
1
0.1
0.01
1
10
100
1000
10 000
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 25 °C
Percent of Rated Peak Reverse Voltage (%)
0 20406080 100
0.1
Instantaneous Reverse Leakage
Current (µA)
Reverse Voltage (V)
Junction Capacitance (pF)
0.1 101 100
20
10
30
40
50
60
0
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
0.1
1
10
100
0.001 0.1 10 1000
Transient Thermal Impedance (°C/W)
t - Pulse Duration (s)
Junction to Ambient
Mounted on 5.0 mm x 5.0 mm copper pad
P1-P3P4-P5

ES2AHE3/52T

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Manufacturer:
Vishay
Description:
Rectifiers 2.0 Amp 50V 20ns
Lifecycle:
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