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EV1HMC219BMS8G
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P18
P19-P21
P22-P24
P25-P27
P28-P28
HMC219B
Data Sheet
Rev.
0
| P
age
18
of
27
UPCON
VE
RTE
R
PERFORMANC
E
D
ata taken as upconv
erter
, lowe
r sideband, T
A
= 25°C,
IF = 100 MHz, and
L
O p
owe
r
= 1
3
d
Bm, unless otherwis
e noted.
Figure
59
.
Conversion
Gain vs. RF
Frequency
at Various
Temperatures
Figure
60
.
Input I
P3 vs. RF F
requency at Various
Temperatures
Figure
61
.
Conversion
Gain vs. RF
Frequency
at Various
LO Powers
Figure
62
.
Input I
P3 vs. RF F
requency at Various
LO Po
wers
0
–20
2.5
7.0
CONV
ERSI
ON G
AI
N (d
B)
RF F
REQ
UENCY (
GHz
)
–18
–16
–14
–12
–10
–8
–6
–4
–2
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
+85°
C
+25°
C
–40°C
15452-059
30
25
20
15
10
5
0
INP
UT I
P3 (d
Bm)
2.5
7.0
RF F
REQ
UENCY (
GHz
)
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
+85°
C
+25°
C
–40°C
15452-060
0
–20
2.5
7.0
CONV
ERSI
ON G
AI
N (d
B)
RF F
REQ
UENCY (
GHz
)
–18
–16
–14
–12
–10
–8
–6
–4
–2
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
9dBm
11dBm
13dBm
15dBm
17dBm
15452-061
30
25
20
15
10
5
0
INP
UT I
P3 (d
Bm)
2.5
7.0
RF F
REQ
UENCY (
GHz
)
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
9dBm
11dBm
13dBm
15dBm
17dBm
15452-062
Data Sheet
HMC219B
Rev.
0
| P
age
19
of
27
Data taken as upconv
erter
, lowe
r
sideband
, T
A
= 25°C, IF = 1000 MH
z, and
L
O drive level = 1
3
dBm, unless otherwise
noted.
Figure
63
.
Conversion
Gain vs. RF
Frequency
at Various
Temperatures
Figure
64
.
Input I
P3 vs. RF F
requency at Various
Temperatures
Figure
65
.
Conversion
Gain vs. RF
Frequency
at Various
LO Powers
Figure
66
.
Input I
P3 vs. RF F
requency at Various
LO Po
wers
0
–20
2.5
7.0
CONV
ERSI
ON G
AI
N (d
B)
RF F
REQ
UENCY (
GHz
)
–18
–16
–14
–12
–10
–8
–6
–4
–2
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
+85°
C
+25°
C
–40°C
15452-063
30
25
20
15
10
5
0
INP
UT I
P3 (d
Bm)
2.5
7.0
RF F
REQ
UENCY (
GHz
)
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
+85°
C
+25°
C
–40°C
15452-064
0
–20
2.5
7.0
CONV
ERSI
ON G
AI
N (d
B)
RF F
REQ
UENCY (
GHz
)
–18
–16
–14
–12
–10
–8
–6
–4
–2
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
9dBm
11dBm
13dBm
15dBm
17dBm
15452-065
30
25
20
15
10
5
0
INP
UT I
P3 (d
Bm)
2.5
7.0
RF F
REQ
UENCY (
GHz
)
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
9dBm
11dBm
13dBm
15dBm
17dBm
15452-066
HMC219B
Data Sheet
Rev.
0
| P
age
20
of
27
Data taken as upconv
erter
, lowe
r sideband, T
A
= 25°C, IF = 2000 MH
z, and
L
O drive level = 1
3
dBm, unless otherwise
noted.
Figure
67
.
Conversion
Gain vs. RF
Frequency
at Various
Temperatures
Figure
68
.
Input I
P3 vs. RF F
requency at Various
Temperatures
Figure
69
.
Conversion
Gain vs. RF
Frequency
at Various
LO Powers
Figure
70
.
Input I
P3 vs. RF F
requency at Various
LO Po
wers
0
–20
2.5
7.0
CONV
ERSI
ON G
AI
N (d
B)
RF F
REQ
UENCY (
GHz
)
–18
–16
–14
–12
–10
–8
–6
–4
–2
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
+85°
C
+25°
C
–40°C
15452-067
30
25
20
15
10
5
0
INP
UT I
P3 (d
Bm)
2.5
7.0
RF F
REQ
UENCY (
GHz
)
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
+85°
C
+25°
C
–40°C
15452-068
0
–20
2.5
7.0
CONV
ERSI
ON G
AI
N (d
B)
RF F
REQ
UENCY (
GHz
)
–18
–16
–14
–12
–10
–8
–6
–4
–2
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
9dBm
11dBm
13dBm
15dBm
17dBm
15452-069
30
25
20
15
10
5
0
INP
UT I
P3 (d
Bm)
2.5
7.0
RF F
REQ
UENCY (
GHz
)
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
9dBm
11dBm
13dBm
15dBm
17dBm
15452-070
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P18
P19-P21
P22-P24
P25-P27
P28-P28
EV1HMC219BMS8G
Mfr. #:
Buy EV1HMC219BMS8G
Manufacturer:
Analog Devices Inc.
Description:
EVAL BOARD FOR HMC219BMS8GE
Lifecycle:
New from this manufacturer.
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