OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

AFT26H160-4S4R3

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
4
RF Device Data
Freescale Semiconductor, Inc.
AFT26H160--4S4R3
Figure 2. A FT26H160--4S4R3 Test Circuit C omponent Layout
C16
C12
C4
R2
C2
Z1
R1
C1
C17
C3
R3
C5
C13
C15
C19
C8
C21
C8
C7
C11
C10
C9
C6
C20
C14
C18
C23
C22
AFT26HP160--8S
Rev. 3
CUT OUT AREA
V
GSA
V
GSB
C
P
Table 5. AFT26H160--4S4R3 Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1, C11 0.3 pF Chip Capacitors ATC600F0R3BT250XT ATC
C2, C3, C4, C5, C6, C7, C8 8.2 pF Chip Capacitors ATC600F8R2BT250XT ATC
C9 0.4 pF Chip Capacitor ATC600F0R4BT250XT ATC
C10 5.6 pF Chip Capacitor ATC600F5R6BT250XT ATC
C12, C13, C14, C15 2.2 F Chip Capacitors C3225X7R2A225K230AB TDK
C16, C17, C18, C19, C20, C21 10 F Chip Capacitors C5750X7S2A106M230KB TDK
C22, C23 220 F, 100 V Electrolytic Capacitors MCGPR100V227M16X26-RH Multicomp
R1 50 , 4 W Termination CW12010T0050GBK ATC
R2, R3 2.7 , 1/4 W Chip Resistors CRCW12062R7FKEA Vishay
Z1 2300--2700 MHz Band, 90, 5 dB Hybrid Coupler X3C25P1-05S Anaren
PCB 0.020,
r
=3.5 RO4350B Rogers
AFT26H160--4S4R3
5
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
2480
ACPR
f, FREQUENCY (MHz)
Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ P
out
= 32 Watts Avg.
-- 2 . 6
-- 1 . 8
-- 2
-- 2 . 2
-- 2 . 4
14
16
15.8
15.6
-- 3 3
47
46
45
44
-- 2 8
-- 2 9
-- 3 0
-- 3 1
D
, DRAIN
EFFICIENCY (%)
D
G
ps
, POWER GAIN (dB)
15.4
15.2
15
14.8
14.6
14.4
14.2
2510 2540 2570 2600 2630 2660 2690 2720
43
-- 3 2
-- 2 . 8
ACPR (dBc)
PARC
V
DD
=28Vdc,P
out
=32W(Avg.)
I
DQA
= 500 mA, V
GSB
=0.6Vdc
Single--Carrier W--CDMA
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
TWO--TONE SPACING (MHz)
10
-- 6 0
-- 1 0
-- 2 0
-- 3 0
-- 5 0
1 200
IMD, INTERMODULATION DISTORTION (dBc)
-- 4 0
IM3--U
IM5--U
IM5--L
IM7--L
IM7--U
V
DD
=28Vdc,P
out
= 25 W (PEP), I
DQA
= 500 mA
V
GSB
= 0.6 Vdc, Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2570 MHz
Figure 5. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
P
out
, OUTPUT POWER (WATTS)
-- 2
-- 4
25
-- 1
-- 3
-- 5
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
10
40 55 85
0
60
50
40
30
20
10
D
DRAIN EFFICIENCY (%)
-- 3 d B = 4 0 W
70
D
ACPR
PARC
ACPR (dBc)
-- 3 6
-- 2 4
-- 2 6
-- 2 8
-- 3 2
-- 3 0
-- 3 4
16
G
ps
, POWER GAIN (dB)
15.5
15
14.5
14
13.5
13
G
ps
--1dB=17.5W
-- 2 d B = 3 0 W
PARC (dB)
-- 6
G
ps
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
IM3--L
0
V
DD
=28Vdc,I
DQA
= 500 mA
V
GSB
= 0.6 Vdc, f = 2570 MHz
Single--Carrier W--CDMA 3.84 MHz Channel
Bandwidth, Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
100
6
RF Device Data
Freescale Semiconductor, Inc.
AFT26H160--4S4R3
TYPICAL CHARACTERISTICS
1
G
ps
ACPR
P
out
, OUTPUT POWER (WATTS) AVG.
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
-- 1 0
-- 2 0
13
16
0
60
50
40
30
20
D
, DRAIN EFFICIENCY (%)
G
ps
, POWER GAIN (dB)
15.5
15
10 100 200
10
-- 6 0
ACPR (dBc)
14.5
14
13.5
0
-- 3 0
-- 4 0
-- 5 0
Figure 7. B roadband Frequency Response
0
24
f, FREQUENCY (MHz)
V
DD
=28Vdc
P
in
=0dBm
I
DQA
= 500 mA
V
GSB
=0.6Vdc
16
12
8
GAIN (dB)
20
4
2200 2300 2400 2500 2600 2700 2800 2900 3000
Gain
2570 MHz
2690 MHz
2496 MHz
D
2496 MHz
2570 MHz
2570 MHz
2690 MHz
2496 MHz
3.84 MHz Channel Bandwidth, Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF
2690 MHz
V
DD
=28Vdc,I
DQA
= 500 mA
V
GSB
=0.6Vdc
Single--Carrier W--CDMA
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

AFT26H160-4S4R3

Mfr. #:
Buy AFT26H160-4S4R3
Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors AF7 2.6GHZ NI880X-4L4S
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet