MRFG35003ANR5 Datasheet MRFG35003ANR5, MRFG35003NR5, MRFG35003NT1 | P1-P3

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ARCHIVE INFORMATION

MRFG35003NT1 replaced by MRFG35003ANT1.

MRFG35003NT1

RF Device Data

Freescale Semiconductor

Gallium Arsenide PHEMT

RF Power Field Effect Transistor

Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies

from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB

linear base station applications.

• Typical W-CDMA Performance: -42 dBc ACPR, 3.55 GHz, 12 Volts,

= 55 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A

@ 0.01% Probability)

Output Power — 300 mWatt

Power Gain — 11.5 dB

Efficiency — 25%

• 3 Watts P1dB @ 3.55 GHz

• Excellent Phase Linearity and Group Delay Characteristics

• High Gain, High Efficiency and High Linearity

• N Suffix Indicates Lead-Free Terminations. RoHS Compliant.

• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.

Table 1. Maximum Ratings

Rating Symbol Value Unit

Drain-Source Voltage V

DSS

15 Vdc

Total Device Dissipation @ T

= 25°C

Derate above 25°C

8.1

(2)

0.05

(2)

W/°C

Gate-Source Voltage V

-5 Vdc

RF Input Power P

29 dBm

Storage Temperature Range T

stg

-65 to +150 °C

Channel Temperature

(1)

175 °C

Operating Case Temperature Range T

-20 to +85 °C

Table 2. Thermal Characteristics

Characteristic Symbol Value Unit

Thermal Resistance, Junction to Case Class AB R

18.5

(2)

°C/W

Table 3. Moisture Sensitivity Level

Test Methodology Rating Package Peak Temperature Unit

Per JESD 22-A113, IPC/JEDEC J - STD- 020 1 260 °C

1. For reliable operation, the operating channel temperature should not exceed 150°C.

2. Simulated.

Document Number: MRFG35003N

Rev. 5, 1/2008

Freescale Semiconductor

Technical Data

3.5 GHz, 3 W, 12 V

POWER FET

GaAs PHEMT

MRFG35003NT1

CASE 466-03, STYLE 1

PLD-1.5

PLASTIC

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RF Device Data

Freescale Semiconductor

MRFG35003NT1

Table 4. Electrical Characteristics

= 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

Saturated Drain Current

= 3.5 Vdc, V

= 0 Vdc)

DSS

— 1.3 — Adc

Off State Leakage Current

= -0.4 Vdc, V

= 0 Vdc)

GSS

— < 1.0 100 µAdc

Off State Drain Current

= 12 Vdc, V

= -2.5 Vdc)

DSO

— — 450 µAdc

Off State Current

= 28.5 Vdc, V

= -2.5 Vdc)

DSX

— < 1.0 7 mAdc

Gate-Source Cut -off Voltage

= 3.5 Vdc, I

= 6.5 mA)

GS(th)

-1.2 -0.9 -0.7 Vdc

Quiescent Gate Voltage

= 12 Vdc, I

= 55 mA)

GS(Q)

-1.2 -0.9 -0.7 Vdc

Power Gain

= 12 Vdc, I

= 55 mA, f = 3.55 GHz)

10 11.5 — dB

Output Power, 1 dB Compression Point

= 12 Vdc, I

= 55 mA, f = 3.55 GHz)

1dB

— 3 — W

Drain Efficiency

= 12 Vdc, I

= 55 mA, P

out

= 0.30 W Avg.,

f = 3.55 GHz)

23 25 — %

Adjacent Channel Power Ratio

= 12 Vdc, P

out

= 0.30 W Avg., I

= 55 mA,

f = 3.55 GHz, W-CDMA, 8.5 P/A @ 0.01% Probability,

64 CH, 3.84 MCPS)

ACPR — -42 -40 dBc

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MRFG35003NT1

RF Device Data

Freescale Semiconductor

Z11 0.082″ x 0.372″ Microstrip

Z12 0.169″ x 0.471″ Microstrip

Z13 0.196″ x 0.093″ Microstrip

Z14 0.313″ x 0.338″ Microstrip

Z16 0.200″ x 0.065″ Microstrip

Z17 0.472″ x 0.044″ Microstrip

PCB Rogers 4350, 0.020″, ε

= 3.5

Figure 1. 3.5 GHz Test Circuit Schematic

Z1, Z18 0.125″ x 0.044″ Microstrip

Z2 0.409″ x 0.044″ Microstrip

Z3 0.326″ x 0.288″ Microstrip

Z4 0.333″ x 0.572″ Microstrip

Z5, Z15 0.527″ x 0.015″ Microstrip

Z6, Z8, Z10 0.050″ x 0.025″ Microstrip

Z7, Z9 0.097″ x 0.025″ Microstrip

C10

INPUT

OUTPUT

C9 C8 C7 C6 C5 C4

C13 C14 C15 C16 C17 C18 C19

C2 C3 C11 C12

Z5 Z15

C21 C22 C24

C25C27C28

C1 C20

Z1 Z2 Z3 Z4 Z10 Z11 Z12 Z13 Z14 Z16 Z17 Z18

C23

C26

Z9Z8Z6 Z7

Table 5. 3.5 GHz Test Circuit Component Designations and Values

Part Description Part Number Manufacturer

C1, C20 7.5 pF Chip Capacitors 100A7R5JP150X ATC

C2, C3, C11, C12 3.9 pF Chip Capacitors (0805) 08051J3R9BBT AVX

C4, C13 10 pF Chip Capacitors 100A100JP500X ATC

C5, C14 100 pF Chip Capacitors 100A101JP500X ATC

C6, C15 100 pF Chip Capacitors 100B101JP500X ATC

C7, C16 1000 pF Chip Capacitors 100B102JP500X ATC

C8, C17 3.9 µF Chip Capacitors ATC

C9, C18 0.1 µF Chip Capacitors ATC

C10, C19 22 µF, 35 V Tantalum Surface Mount Capacitors ATC

C21 0.7 pF Chip Capacitor (0805) 08051J0R7BBT AVX

C22, C27 0.2 pF Chip Capacitors (0805) 08051J0R2BBT AVX

C23, C28 0.8 pF Chip Capacitors (0805) 08051J0R8BBT AVX

C24 1.0 pF Chip Capacitor 08051J1R0BBT AVX

C25 1.2 pF Chip Capacitor 08051J1R2BBT AVX

C26 0.5 pF Chip Capacitor 08051J0R5BBT AVX

100 W Chip Resistor

Newark

P1-P3 P4-P6 P7-P9 P10-P10

MRFG35003ANR5

Mfr. #:

Buy MRFG35003ANR5

Manufacturer:

NXP Semiconductors

Description:

FET RF 15V 3.55GHZ PLD-1.5

Lifecycle:

New from this manufacturer.

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MRFG35003ANR5

MRFG35003ANR5

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