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TESD5V0V4UA RDG

P1-P3P4-P6
TESD5V0V4UA
Taiwan Semiconductor
1 Version:A1705
V
WM
=5V, 0.8pF ESD Protection Array
FEATURES
● Meet IEC61000-4-2(ESD) ±17kV(air) , ±12kV(contact)
● Working Voltage: 5V
● Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● USB 2.0 / 3.0 / 3.1
● High Definition Multi-Media Interface(HDMI 1.3 /1.4 / 2.0)
MECHANICAL DATA
● Case: 2510P10
● Molding compound meets UL 94 V-0 flammability rating
● Moisture sensitivity level: level 1, per J-STD-020
● Packing code with suffix "G" means green compound
(halogen-free)
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 1A whisker test
● Polarity: As marked
● Weight: 3.59 mg (approximately)
KEY PARAMETERS
PARAMETER
VALUE
UNIT
P
PPSM
95
W
I
PP
5
A
V
WM
5
V
V
(BR)
at I
R
= 1 mA
6
V
V
C
at
I
PP
= 5 A
19
V
Package
2510P10
Configuration
Single dice
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted)
SYMBOL
TESD5V0V4UA
UNIT
24A
P
PPSM
95
W
I
PP
5
A
V
ESD
±17
±12
kV
T
J
-55 to +125
°C
T
STG
-55 to +125
°C
TESD5V0V4UA
Taiwan Semiconductor
2 Version:A1705
ELECTRICAL SPECIFICATIONS (T
A
= 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
MIN
TYP
MAX
UNIT
Forward voltage per diode
(1)
I
R
= 1 mA
V
(BR)
6
-
-
V
Rated working standoff voltage
V
WM
-
-
5
V
Reverse current
(1)
V
R
= 5 V
(any I/O pin to Ground )
I
R
-
-
1
µA
Clamping voltage
(2)
I
PP
= 1 A
(any I/O pin to Ground )
V
C
-
-
15
V
Clamping voltage
(2)
I
PP
= 5 A
(any I/O pin to Ground )
V
C
-
-
19
V
Junction capacitance
1 MHz, V
R
=0 V
(any I/O pin to Ground )
C
J
-
-
0.8
pF
Junction capacitance
1 MHz, V
R
=0 V
(between I/O pins )
C
J
-
-
0.4
pF
Notes:
1. Pulse test with PW=30 ms
2. tp=8/20μs waveform
ORDERING INFORMATION
PART NO.
PACKING
CODE
PACKING CODE
SUFFIX
PACKAGE
PACKING
TESD5V0V4UA
(Note 1)
RD
G
2510P10
3K / 7" Reel
Notes:
1. Whole series with green compound
EXAMPLE
EXAMPLE P/N
PART NO.
PACKING CODE
PACKING CODE
SUFFIX
DESCRIPTION
TESD5V0V4UA RDG
TESD5V0V4UA
RD
G
Green compound
TESD5V0V4UA
Taiwan Semiconductor
3 Version:A1705
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig. 1 8/20μs pulse waveform
according to IEC 61000-4-5
Fig. 2 ESD pulse waveform
according to IEC 6100-4-2
Fig. 3 TLP I-V Curve
Fig. 4 Typical Junction Capacitance
(any I/O pin to Ground )
0
40
80
120
0 10 20 30 40
100% Ipp ; 8 μs
e
-t
50% Ipp ; 20 μs
0
10
20
30
40
50
60
70
80
90
100
110
-10 10 30 50 70
t
r
=0.7ns to 1ns
-14.0
-12.0
-10.0
-8.0
-6.0
-4.0
-2.0
0.0
-25 -20 -15 -10 -5 0
0
0.2
0.4
0.6
0.8
0 1 2 3 4 5
Peak Impulse Current I
PP
(%)
t (μs)
TLP Current(A)
TLP Volts(V)
Junction Capacitance C
J
(pF)
Reverse Voltage (V)
t(ns)
Peak Impulse Current I
PP
(%)
P1-P3P4-P6

TESD5V0V4UA RDG

Mfr. #:
Buy TESD5V0V4UA RDG
Manufacturer:
Taiwan Semiconductor
Description:
TVS Diodes / ESD Suppressors VWM=5V, 0,8pF ESD Protection Array
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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