MCD310-14io1 Datasheet MCD310-14io1, MCC310-16io1, MCC310-12io1 | P1-P3

1 - 4

Symbol Test Conditions Maximum Ratings

I

TRMS

, I

FRMS

T

VJ

= T

VJM

500 A

I

TAVM

, I

FAVM

T

C

= 85°C; 180° sine 320 A

I

TSM

, I

FSM

T

VJ

= 45°C; t = 10 ms (50 Hz), sine 9200 A

V

R

= 0 t = 8.3 ms (60 Hz), sine 9800 A

T

VJ

= T

VJM

t = 10 ms (50 Hz), sine 8000 A

V

R

= 0 t = 8.3 ms (60 Hz), sine 8600 A

òi

2

dt T

VJ

= 45°C t = 10 ms (50 Hz), sine 420 000 A

2

s

V

R

= 0 t = 8.3 ms (60 Hz), sine 400 000 A

2

s

T

VJ

= T

VJM

t = 10 ms (50 Hz), sine 320 000 A

2

s

V

R

= 0 t = 8.3 ms (60 Hz), sine 306 000 A

2

s

(di/dt)

cr

T

VJ

= T

VJM

repetitive, I

T

= 960 A 100 A/ms

f =50 Hz, t

P

=200 ms

V

D

= 2/3 V

DRM

I

G

= 1 A non repetitive, I

T

= 320 A 500 A/ms

di

G

/dt = 1 A/ms

(dv/dt)

cr

T

VJ

= T

VJM

;V

DR

= 2/3 V

DRM

1000 V/ms

R

GK

= ¥; method 1 (linear voltage rise)

P

GM

T

VJ

= T

VJM

t

P

= 30 ms 120 W

I

T

= I

TAVM

t

P

= 500 ms60W

P

GAV

20 W

V

RGM

10 V

T

VJ

-40...+140 °C

T

VJM

140 °C

T

stg

-40...+125 °C

V

ISOL

50/60 Hz, RMS t = 1 min 3000 V~

I

ISOL

£ 1 mA t = 1 s 3600 V~

M

d

Mounting torque (M5) 2.5-5/22-44 Nm/lb.in.

Terminal connection torque (M8) 12-15/106-132 Nm/lb.in.

Weight Typical including screws 320 g

V

RSM

V

RRM

Type

V

DSM

V

DRM

V V Version 1 Version 1

900 800 MCC 310-08io1 MCD 310-08io1

1300 1200 MCC 310-12io1 MCD 310-12io1

1500 1400 MCC 310-14io1 MCD 310-14io1

1700 1600 MCC 310-16io1 MCD 310-16io1

1900 1800 MCC 310-18io1 MCD 310-18io1

Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.

IXYS reserves the right to change limits, test conditions and dimensions

Features

●

International standard package

●

Direct copper bonded Al

2

O

3

-ceramic

base plate

●

Planar passivated chips

●

Isolation voltage 3600 V~

●

UL registered, E 72873

●

Keyed gate/cathode twin pins

Applications

●

Motor control

●

Power converter

●

Heat and temperature control for

industrial furnaces and chemical

processes

●

Lighting control

●

Contactless switches

Advantages

●

Space and weight savings

●

Simple mounting

●

Improved temperature and power

cycling

●

Reduced protection circuits

I

TRMS

= 2x 500 A

I

TAVM

= 2x 320 A

V

RRM

= 800-2200 V

030

MCC 310

MCD 310

Thyristor Modules

Thyristor/Diode Modules

7

6

5

4

2

3

1

MCD

MCC

3671 542

31542

2 - 4

Symbol Test Conditions Characteristic Values

I

RRM

T

VJ

= T

VJM

; V

R

= V

RRM

; V

D

= V

DRM

70 mA

I

DRM

40 mA

V

T

, V

F

I

T

, I

F

= 600 A; T

VJ

= 25°C 1.32 V

V

T0

For power-loss calculations only (T

VJ

= 140°C) 0.8 V

r

T

0.82 mW

V

GT

V

D

= 6 V; T

VJ

= 25°C2V

T

VJ

= -40°C3V

I

GT

V

D

= 6 V; T

VJ

= 25°C 150 mA

T

VJ

= -40°C 200 mA

V

GD

T

VJ

= T

VJM

;V

D

= 2/3 V

DRM

0.25 V

I

GD

10 mA

I

L

T

VJ

= 25°C; t

P

= 30 ms; V

D

= 6 V 200 mA

I

G

= 0.45 A; di

G

/dt = 0.45 A/ms

I

H

T

VJ

= 25°C; V

D

= 6 V; R

GK

= ¥ 150 mA

t

gd

T

VJ

= 25°C; V

D

= 1/2 V

DRM

2 ms

I

G

= 1 A; di

G

/dt = 1 A/ms

t

q

T

VJ

= T

VJM

; I

T

= 300 A, t

P

= 200 ms; -di/dt = 10 A/ms typ. 200 ms

V

R

= 100 V; dv/dt = 50 V/ms; V

D

= 2/3 V

DRM

Q

S

T

VJ

= 125°C; I

T

, I

F

= 400 A, -di/dt = 50 A/ms 760 mC

I

RM

275 A

R

thJC

per thyristor/diode; DC current 0.112 K/W

per module other values 0.056 K/W

R

thJK

per thyristor/diode; DC current see Fig. 8/9 0.152 K/W

per module 0.076 K/W

d

S

Creepage distance on surface 12.7 mm

d

A

Strike distance through air 9.6 mm

a Maximum allowable acceleration 50 m/s

2

Optional accessories for modules

Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red

Type ZY 180L (L = Left for pin pair 4/5) UL 758, style 1385,

Type ZY 180R (R = right for pin pair 6/7) CSA class 5851, guide 460-1-1

MCC 310

MCD 310

Dimensions in mm (1 mm = 0.0394")

MCC MCD

Threaded spacer for higher Anode/

Cathode construction:

Type ZY 250, material brass

Fig. 1 Gate trigger characteristics

Fig. 2 Gate trigger delay time

20 12

14

3 - 4

Fig. 3 Surge overload current

I

TSM

, I

FSM

: Crest value, t: duration

Fig. 4 òi

2

dt versus time (1-10 ms) Fig. 4a Maximum forward current

at case temperature

Fig. 5 Power dissipation versus on-

state current and ambient

temperature (per thyristor or

diode)

Fig. 6 Three phase rectifier bridge:

Power dissipation versus direct

output current and ambient

temperature

MCC 310

MCD 310

MCD310-14io1

MCD310-14io1

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