VLA500-01

VLA500-01
Hybrid IC IGBT Gate Driver +
DC/DC Converter
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
4 Rev. 2/08
V
D
= 16.5V
20
10
8
6
16
18
14
12
4
2
0
14.0 14.5 15.515.0 16.0 16.5 17.0
V
CC
V
D
=
15V
|V
EE
|
T
a
= 25°C
SUPPLY VOLTAGE, V
D
, (VOLTS)
V
IN
(PIN 6 TO 7)
V
O
(PIN 23 TO 22)
90%
50%
10%
t
r
t
f
t
PLH
t
PHL
V
CC
, |V
EE
|, (VOLTS)
V
CC
, |V
EE
|
VS. V
D
CHARACTERISTICS
(TYPICAL)
0.25
0.20
0.15
0
0.05
0.10
020406080
AMBIENT TEMPERAT URE, T
a
, (°C)
GATE DRIVE CURRENT, I
drive
, (AMPERES)
T
a
VS. I
drive
CHARACTERISTICS
(TYPICAL)
R
G
= 1.1 W
Load: CM1400DU-24NF
65
75
70
60
55
45
50
14.0 14.5 15.0 16.0 16.515.5 17.0
SUPPLY VOLTAGE, V
D
, (VOLTS)
EFFICIENCY, E
ta
, (%)
E
ta
,
VS. V
D
CHARACTERISTICS
(TYPICAL)
SWITCHING TIME DEFINITIONS
40
50
80
70
60
40
30
10
20
0 0.05 0.10 0.200.15 0.25
GATE DRIVE CURRENT, I
drive
, (AMPERES)
EFFICIENCY, E
ta
, (%)
E
ta
VS. I
drive
CHARACTERISTICS
(TYPICAL)
0
I
O
= 0.1A
T
a
= 25°C
V
D
= 15V
T
a
= 25°C
V
OH
|V
OL
|
5
9
8
7
6
4
3
1
2
02550 10075 125
CONNECTIVE CAPACITANCE, C
trip
, (pF) (Pin: 29 – 21)
CONTROLLED TIME DETECT
SHORT-CIRCUIT, t
trip
, (µs)
t
trip
VS. C
trip
CHARACTERISTICS
(TYPICAL)
V
D
= 15V
T
a
= 25°C
0
V
D
= 15V
R
G
= 2.2 W
Load: CM1400DU-24NF
0.5
0.6
0.4
0.3
0.1
0.2
0 0.05 0.10 0.200.15 0.25
LOAD CURRENT, I
O
, (AMPERES) (Pin: 19 – 21, 22)
INPUT CURRENT, I
D
, (AMPERES)
I
D
VS. I
O
CHARACTERISTICS
(TYPICAL)
V
D
= 15V
T
a
= 25°C
0
14
22
20
18
16
12
10
6
8
-20 0206040 80
AMBIENT TEMPERAT URE, T
a
, (°C)
“H” OUTPUT VOLTAGE, V
OH
, (VOLTS)
“L” OUTPUT VOLTAGE, |V
OL
|, (VOLTS)
V
OH
, |V
OL
|
VS. T
a
CHARACTERISTICS
(TYPICAL)
4
VLA500-01
Hybrid IC IGBT Gate Driver +
DC/DC Converter
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
5Rev. 2/08
+
C2
1 2 3 7
26 27
23 24 25
17 18 19
20 21 22
30
28
Control
C3
R
G
C
trip
C1
G
E
IGBT MODULE
R2
R1
CS
DZ1
D1
DZ2
DZ3
OP1
+15V
Common
+5V
Fault
R3
R4
C4
B1
4 5 6
+ +
29
VLA500-01
Component Selection:
Design Typical Value Description
D1 0.5A V
CE
detection diode – fast recovery, V
rrm
> V
CES
of IGBT being used (Note 1)
DZ1 30V, 0.5W Detect input pin surge voltage protection (Note 2)
DZ2, DZ3 18V, 1.0W Gate surge voltage protection
C1 150µF, 35V V
D
supply decoupling – Electrolytic, long life, low Impedance, 105°C (Note 3)
C2, C3 100-1000µF, 35V DC/DC output filter – Electrolytic, long life, low Impedance, 105°C (Note 3,4)
C4 0.01µF Fault feedback signal noise filter
CS 0-1000pF Adjust soft shutdown – Multilayer ceramic or film (see application note)
C
trip
0-200pF Adjust trip time – Multilayer ceramic or film (see application note)
R1 4.7k, 0.25W Fault sink current limiting resistor
R2 3.3k, 0.25W Fault signal noise suppression resistor
R3 1k, 0.25W Fault feedback signal noise filter
R4 4.7k, 0.25W Fault feedback signal pull-up
OP1 NEC PS2501 Opto-coupler for fault feedback signal isolation
B1 CMOS Buffer 74HC04 or similar – Must actively pull high to maintain noise immunity
Notes:
(1) The V
CE
detection diode should have a blocking voltage rating equal to or greater than the V
CES
of the IGBT
being driven. Recovery time should be less than 200ns to prevent application of high voltage to Pin 30.
(2) DZ1 is necessary to protect Pin 30 of the driver from voltage surges during the recovery of D1.
(3) Power supply input and output decoupling capacitors should be connected as close as possible to the pins of the gate driver.
(4) DC-to-DC converter output decoupling capacitors must be sized to have appropriate ESR and ripple current
capability for the IGBT being driven.
Application Circuit
VLA500-01
Hybrid IC IGBT Gate Driver +
DC/DC Converter
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
6 Rev. 2/08
General Description
The VLA500-01 is a hybrid integrated circuit designed to
provide gate drive for high power IGBT modules. This
circuit has been optimized for use with Powerex NF-
Series and A-Series IGBT modules. However, the
output characteristics are compatible with most MOS
gated power devices. The VLA500-01 features a com-
pact single-in-line package design. The upright mount-
ing minimizes required printed circuit board space to
allow efficient and flexible layout. The VLA500-01
converts logic level control signals into fully isolated
+15V/-8V gate drive with up to12A of peak drive current.
Isolated drive power is provided by a built in DC-to-DC
converter and control signal isolation is provided by an
integrated high speed opto-coupler. Short circuit protec-
tion is provided by means of destauration detection.
Short Circuit Protection
Figure 1 shows a block diagram of a typical desatura-
tion detector. In this circuit, a high voltage fast recovery
diode (D1) is connected to the IGBT’s collector to moni-
tor the collector to emitter voltage. When the IGBT is in
the off state, V
CE
is high and D1 is reverse biased. With
D1 off the (+) input of the comparator is pulled up to
the positive gate drive power supply (V+) which is nor-
mally +15V. When the IGBT turns on, the comparators
(+) input is pulled down by D1 to the IGBT’s V
CE(sat)
.
The (-) input of the comparator is supplied with a fixed
voltage (V
trip
). During a normal on-state condition the
comparator’s (+) input will be less than V
trip
and it’s out-
put will be low. During a normal off-state condition the
comparator’s (+) input will be larger than V
trip
and it’s out-
put will be high. If the IGBT turns on into a short circuit,
the high current will cause the IGBT’s collector-emitter
voltage to rise above V
trip
even though the gate of the
IGBT is being driven on. This abnormal presence of
high V
CE
when the IGBT is supposed to be on is often
called desaturation. Desaturation can be detected by
a logical AND of the driver’s input signal and the com-
parator output. When the output of the AND goes high
a short circuit is indicated. The output of the AND can
be used to command the IGBT to shut down in order
to protect it from the short circuit. A delay (t
trip
) must be
provided after the comparator output to allow for the nor-
mal turn on time of the IGBT. The t
trip
delay is set so
that the IGBT's V
CE
has enough time to fall below V
trip
during normal turn on switching. If t
trip
is set too short,
erroneous desaturation detection will occur. The maxi-
mum allowable t
trip
delay is limited by the IGBT’s short
circuit withstanding capability. In typical applications
using Powerex IGBT modules the recommended limit is
10µs.
Operation of the VLA500-01 Desaturation Detector
The Powerex VLA500-01 incorporates short circuit
protection using desaturation detection as described
above. A flow chart for the logical operation of the short-
circuit protection is shown in Figure 2. When a desatura-
tion is detected the hybrid gate driver performs a soft
shutdown of the IGBT and starts a timed (t
timer
) 1.5ms
lock out. The soft turn-off helps to limit the transient
voltage that may be generated while interrupting the
large short circuit current flowing in the IGBT. During the
lock out the driver pulls Pin 28 low to indicate the fault
status. Normal operation of the driver will resume after
the lock-out time has expired and the control input signal
returns to its off state.
Adjustment of Trip Time
The VLA500-01 has a default short-circuit detection
time delay (t
trip
) of approximately 3µs. This will prevent
erroneous detection of short-circuit conditions as long
as the series gate resistance (R
G
) is near the mini-
mum recommended value for the module being used.
The 3µs delay is appropriate for most applications so
adjustment will not be necessary. However, in some low
frequency applications it may be desirable to use a
larger series gate resistor to slow the switching of
the IGBT, reduce noise, and limit turn-off transient
GATE
DRIVE
IGBT
MODULE
AND
INPUT
V+
D1
V
trip
C
E
G
E
R
G
DELAY
t
trip
COMPARE
SHUTDOWN
+
Figure 1. Desaturation Detector

VLA500-01

Mfr. #:
Manufacturer:
Description:
IC IGBT GATE DVR/DC-DC CONV 12A
Lifecycle:
New from this manufacturer.
Delivery:
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