SUM110P08-11-E3

www.vishay.com
4
Document Number: 73472
S-70309-Rev. B, 12-Feb-07
Vishay Siliconix
SUM110P08-11
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
Power Derating (Junction-to-Case)
0.0 0.3 0.6 0.9 1.2 1.5
T
J
= 150 °C
V
SD
- (V)
100
10
1
I
S
- (A)
25 °C
- 0.4
- 0.1
0.2
0.5
0.8
1.1
- 50 - 25 0 25 50 75 100 125 150 175
I
D
= 1 mA
T
J
- (°C)
V
GS(th)
Variance (V)
T
C
Power (W)
0
50
100
150
200
250
300
350
400
25 50 75 100 125 150 175
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Case (T
C
= 25 °C)
Safe Operating Area
0.00
0.01
0.02
0.03
0.04
0.05
0246810
V
GS
- (V)
25 °C
150 °C
R
DS
- (Ω)
Time (sec)
0.0001 0.001 0.01 0.10 1
Power (W)
0
1000
2000
3000
4000
5000
6000
V
DS
- Drain-to-Source Voltage (V)
*V
GS
> minimum V
GS
at which r
DS(on)
is
specified
0.1 1 10
100
0.1
100
1000
10
1 ms
100 ms, DC
100 µs
10 µs
10 ms
I
D
(A)
1
Single pulse
T
C
= 25 °C
*Limited by r
DS(on)
Document Number: 73472
S-70309-Rev. B, 12-Feb-07
www.vishay.com
5
Vishay Siliconix
SUM110P08-11
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
*The power dissipation P
D
is based on T
J(max)
= 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissi-
pation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?73472.
Max Avalanche and Drain Current
vs. Case Temperature
0
30
60
90
120
0 25 50 75 100 125 150 175
I
D
- (A)
T
C
- (°C)
Package Limited
Avalanche Current vs. Time
tin - (Sec)
I
D
av - (A)
0.1
1
10
100
1000
0.00001 0.0001 0.001 0.01 0.1 1.0
Normalized Thermal Transient Impedance, Junction-to-Case
0.1
0.2
0.01
0.1
1
Normalized Effective Transient Thermal Impedance
0.01
10.0001
0.05
0.02
Single
0.5
0.001
0.1
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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SUM110P08-11-E3

Mfr. #:
Manufacturer:
Vishay
Description:
MOSFET P-CH 80V 110A D2PAK
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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