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ZXTC2062E6TA

P1-P3P4-P6P7-P9
ZXTC2062E6
Document Number: DS33647 Rev. 3 - 2
1 of 9
www.diodes.com
March 2015
© Diodes Incorporated
ZXTC2062
E6
ADVANCE INFO R MA T I O N
A Product Line of
Diodes Incorporated
20V COMPLEMENTARY MEDIUM POWER TRANSISTORS IN SOT26
Features
• NPN + PNP Combination
• BV
CEO
> 20 (-20)V
• BV
EBO
> 7 (-7)V
• Continuous Collector Current I
C
= 4 (-3.5)A
• V
CE(sat)
< 50 (-65)mV @ 1A
• R
CE(sat)
= 35 (54)mΩ
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT26
• Case Material: Molded Plastic, “Green” Molding Compound
• UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish – Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
• Weight: 0.015 grams (Approximate)
Applications
• MOSFET and IGBT Gate Driving
• Motor Drive
Ordering Information
(Note 4)
Product
Reel size (inches)
Tape width (mm)
Quantity per reel
ZXTC2062E6TA
2062 7 8 3,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/ for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green" and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year
2015
2016
2017
2018
2019
2020
2021
2022
2023
2024
2025
Code
C D E F G H I J K L M
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1 2 3 4 5 6 7 8 9 O N D
Top View
Device Symbol
SOT26
Top View
Pin-Out
C
1
E1
B
1
C
2
E2
B2
Q1
Q2
C
1
B1
C
2
E1
B2
E2
2062
2062 = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: C = 2015)
M or M = Month (ex: 9 = September)
SOT26
ZXTC2062E6
Document Number: DS33647 Rev. 3 - 2
2 of 9
www.diodes.com
March 2015
© Diodes Incorporated
ZXTC2062
E6
ADVANCE INFO R MA T I O N
A Product Line of
Diodes Incorporated
Absolute Maximum Ratings – Q1 (NPN Transistor)
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
100 V
Collector-Emitter Voltage
V
CEO
20 V
Emitter-Collector Voltage (reverse blocking)
V
EC
O
5 V
Emitter-Base Voltage
V
EBO
7 V
Continuous Collector Current
I
C
4 A
Peak Pulsed Collector Current
I
CM
10 A
Base Current
I
B
1 A
Absolute Maximum Ratings – Q2 (PNP Transistor)
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
-25 V
Collector-Emitter Voltage
V
CEO
-20 V
Emitter-Collector Voltage (reverse blocking)
V
EC
O
-4 V
Emitter-Base Voltage
V
EBO
-7 V
Continuous Collector Current
I
C
-3.5 A
Peak Pulsed Collector Current
I
CM
-10 A
Base Current
I
B
-1 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation
Linear Derating Factor
(Notes 5 & 9)
P
D
0.7
5.6
W
mW/°C
(Notes 6 & 9)
0.9
7.2
(Notes 6 & 10)
1.1
8.8
(Notes 7 & 9)
1.1
8.8
(Notes 8 & 9)
1.7
13.6
Thermal Resistance, Junction to Ambient
(Notes 5 & 9)
R
θ
JA
179
°C/W
(Notes 6 & 9) 139
(Notes 6 & 10) 113
(Notes 7 & 9) 113
(Notes 8 & 9) 73
Thermal Resistance, Junction to Lead (Note 11)
R
θ
JL
87.5
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150 °C
ESD Ratings
(Note 12)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A
Electrostatic Discharge - Machine Model ESD MM 400 V C
Notes: 5. For a device surface mounted on 15mm x 15mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
6. Same as Note (5), except the device is surface mounted on 25mm x 25mm 1oz copper.
7. Same as Note (5), except the device is surface mounted on 50mm x 50mm 2oz copper.
8. Same as Note (7), except the device is measured at t < 5 seconds.
9. For device with one active die, both collectors attached to a common heatsink.
10. For device with two active dice running at equal power, split heatsink 50% to each collector.
11. Thermal resistance from junction to solder-point (at the end of the collector lead).
12. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZXTC2062E6
Document Number: DS33647 Rev. 3 - 2
3 of 9
www.diodes.com
March 2015
© Diodes Incorporated
ZXTC2062
E6
ADVANCE INFO R MA T I O N
A Product Line of
Diodes Incorporated
Thermal Characteristics and Derating Information
100µ 1m 10m 100m 1 10 100 1k
0
10
20
30
40
50
60
70
80
90
100
110
0.1 1 10
10m
100m
1
10
100m 1 10
10m
100m
1
10
NPN
T
amb
=25°C
50mm x 50mm 2oz FR4
One active die
R
DS(on)
Limit
100µs
1ms
10ms
100ms
1s
DC
Safe Operating Area
I
C
Collector Current (A)
V
CE
Collector-Emitter Voltage (V)
0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
15mm x 15mm 1oz FR4
One activ die
25mm x 25mm 1oz FR4
One activ die
50mm x 50mm 2oz FR4
One activ die
25mm x 25mm 1oz FR4
two activ die
50mm x 50mm 2oz FR4
One activ die, t < 5 sec
Derating Curve
Temperature (°C)
Max Power Dissipation (W)
100µ 1m 10m 100m 1 10 100 1k
1
10
100
Single Pulse
T
amb
=25°C
50mm x 50mm
2oz FR4
One active die
Safe Operating Area
Pulse Power Dissipation
Pulse Width (s)
Max Power Dissipation (W)
T
amb
=25°C
50mm x 50mm 2oz FR4
One activ die
D=0.1
D=0.05
Single Pulse
D=0.2
D=0.5
Transient Thermal Impedance
Pulse Width (s)
Thermal Resistance (°C/W)
PNP
T
amb
=25°C
50mm x 50mm 2oz FR4
One active die
100µs
1ms
10ms
100ms
1s
DC
R
DS(on)
Limit
-V
CE
Collector-Emitter Voltage (V)
-I
C
Collector Current (A)
P1-P3P4-P6P7-P9

ZXTC2062E6TA

Mfr. #:
Buy ZXTC2062E6TA
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT 20V 1A Complementary Med power transistor
Lifecycle:
New from this manufacturer.
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