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IRFS5615TRLPBF

P1-P3P4-P6P7-P9
www.irf.com 1
12/18/08
IRFS5615PbF
IRFSL5615PbF
Notes through are on page 2
DIGITAL AUDIO MOSFET
Features
• Key Parameters Optimized for Class-D Audio
Amplifier Applications
• Low R
DSON
for Improved Efficiency
• Low Q
G
and Q
SW
for Better THD and Improved
Efficiency
• Low Q
RR
for Better THD and Lower EMI
• 175°C Operating Junction Temperature for
Ruggedness
• Can Deliver up to 300W per Channel into 4Ω Load in
Half-Bridge Configuration Amplifier
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes
the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode
reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance
factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction
temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient,
robust and reliable device for ClassD audio amplifier applications.
S
D
G
GDS
Gate Drain Source
S
D
G
D
D
S
G
D
2
Pak
IRFS5615PbF
TO-262
IRFSL5615PbF
PD - 96204
V
DS
150 V
R
DS(ON)
typ. @ 10V
34.5
m
Q
g
typ.
26 nC
Q
sw
typ.
11 nC
R
G(int)
typ.
2.7 Ω
T
J
max
175 °C
Key Parameters
Absolute Maximum Ratings
Parameter Units
V
DS
Drain-to-Source Voltage
V
GS
Gate-to-Source Voltage
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C
Power Dissipation
P
D
@T
C
= 100°C
Power Dissipation
Linear Derating Factor W/°C
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Thermal Resistance
Parameter Typ. Max. Units
R
θ
JC
Junction-to-Case
––– 1.045
R
θJA
Junction-to-Ambient (PCB Mount)
––– 40
°C/W
°C
A
V
W
144
72
0.96
-55 to + 175
300
Max.
24
140
±20
150
33
IRFS/SL5615PbF
2 www.irf.com
S
D
G
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.51mH, R
G
= 25Ω, I
AS
= 21A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
R
θ
is measured at T
J
of approximately 90°C.
Notes:
Limited by Tjmax. See Figs. 14, 15, 17a, 17b for repetitive
avalanche information
When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniques refer to
application note #AN-994.
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 150 ––– ––– V
∆ΒV
DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 0.18 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 34.5 42
mΩ
V
GS(th)
Gate Threshold Voltage 3.0 ––– 5.0 V
∆
V
GS(th)
/
∆
T
J
Gate Threshold Voltage Coefficient ––– -13 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 20
––– ––– 250
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
g
fs
Forward Transconductance 35 ––– ––– S
Q
g
Total Gate Charge ––– 26 40
Q
gs1
Pre-Vth Gate-to-Source Charge ––– 6.4 –––
Q
gs2
Post-Vth Gate-to-Source Charge ––– 2.2 –––
Q
gd
Gate-to-Drain Charge ––– 9.0 –––
Q
godr
Gate Charge Overdrive ––– 8.9 ––– See Fig. 6 and 19
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
––– 11 –––
R
G(int)
Internal Gate Resistance ––– 2.7 5.0 Ω
t
d(on)
Turn-On Delay Time ––– 8.9 –––
t
r
Rise Time ––– 23.1 –––
t
d(off)
Turn-Off Delay Time ––– 17.2 –––
t
f
Fall Time ––– 13.1 –––
C
iss
Input Capacitance ––– 1750 –––
C
oss
Output Capacitance ––– 155 –––
C
rss
Reverse Transfer Capacitance ––– 40 –––
C
oss
Effective Output Capacitance ––– 175 –––
L
D
Internal Drain Inductance Between lead,
6mm (0.25in.)
L
S
Internal Source Inductance from package
Avalanche Characteristics
Parameter Units
E
AS
Sin
g
le Pulse Avalanche Ener
g
y
mJ
I
AR
Avalanche Current
A
E
AR
Repetitive Avalanche Ener
g
y
mJ
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
@ T
C
= 25°C
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– 1.3 V
t
rr
Reverse Recovery Time ––– 80 120 ns
Q
rr
Reverse Recovery Charge ––– 312 468 nC
––– 109
See Fig. 14, 15, 17a, 17b
I
D
= 21A
Typ. Max.
ƒ = 1.0MHz, See Fig.5
pF
nH
4.5
T
J
= 25°C, I
F
= 21A, V
R
=120V
di/dt = 100A/µs
T
J
= 25°C, I
S
= 21A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 21A
V
DS
= V
GS
, I
D
= 100µA
V
DS
= 150V, V
GS
= 0V
V
GS
= 0V, V
DS
= 0V to 120V
V
DS
= 150V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
GS
= 10V
I
D
= 21A
V
GS
= 0V
MOSFET symbol
R
G
= 2.4
Ω
V
DS
= 50V, I
D
= 21A
Conditions
and center of die contact
V
DD
= 75V, V
GS
= 10V
V
DS
=75V
V
DS
= 50V
µA
nA
nC
ns
––– –––
––– –––7.5
–––
––– –––
A
33
140
–––
IRFS/SL5615PbF
www.irf.com 3
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
-60 -40 -20 0 20 40 60 80 100120140160180
T
J
, Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
3.0
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 21A
V
GS
= 10V
1 10 100 1000
V
DS
, Drain-to-Source Voltage (V)
10
100
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
C
rss
C
iss
0 5 10 15 20 25 30 35
Q
G
,
Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 120V
V
DS
= 75V
VDS= 30V
I
D
= 21A
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VGS
TOP 15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
≤
60µs PULSE WIDTH
Tj = 25°C
5.0V
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VGS
TOP 15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
≤
60µs PULSE WIDTH
Tj = 175°C
5.0V
2 4 6 8 10 12 14 16
V
GS
, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 175°C
V
DS
= 50V
≤
60µs PULSE WIDTH
P1-P3P4-P6P7-P9

IRFS5615TRLPBF

Mfr. #:
Buy IRFS5615TRLPBF
Manufacturer:
Infineon / IR
Description:
MOSFET Audio MOSFT 150V 33A 42mOhm 26nC
Lifecycle:
New from this manufacturer.
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