APT97N65LC6

050-7214 Rev A 4-2012
Typical Performance Curves
APT94N65B2_LC6
0
2
4
6
8
10
12
14
0 100 200 300 400
10
100
1,000
10,000
60,000
0 100 200 300 400 500
C
iss
V
DS
= 520V
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 10, Capacitance vs Collector-To-Emitter Voltage
C, CAPACITANCE (pF)
V
DS
= 325V
Q
g
, TOTAL GATE CHARGE (nC)
FIGURE 11, Gate Charges vs Gate-To-Source Voltage
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
C
oss
C
rss
I
D
= 94A
V
DS
= 130V
0
2000
4000
6000
8000
10000
12000
14000
0 10 20 30 40 50
0
50
100
150
200
250
300
0 50 100 150
1
10
100
1000
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0 40 80 120 160
0
100
200
300
400
500
T
J
= 25°C
I
D
(A)
FIGURE 13, Delay Times vs Current
t
d(on)
and t
d(off)
(ns)
V
SD,
SOURCE-TO-DRAIN VOLTAGE (V)
FIGURE 12, Source-Drain Diode Forward Voltage
I
DR
, REVERSE DRAIN CURRENT (A)
I
D
(A)
FIGURE 14 , Rise and Fall Times vs Current
t
r
, and t
f
(ns)
R
G
, GATE RESISTANCE (Ohms)
FIGURE 16, Switching Energy vs Gate Resistance
SWITCHING ENERGY (uJ)
0
1000
2000
3000
4000
5000
6000
7000
8000
9000
10000
0 50 100 1
5
I
D
(A)
FIGURE 15, Switching Energy vs Current
SWITCHING ENERGY (J)
T
J
= +150°C
V
DD
= 400V
R
G
= 4.3
T
J
= 125°C
L = 100H
t
d(on)
t
d(off)
V
DD
= 400V
R
G
= 4.3
T
J
= 125°C
L = 100H
E
ON
includes
diode reverse recovery.
E
on
E
off
V
DD
= 400V
R
G
= 4.3
T
J
= 125°C
L = 100H
t
r
t
f
E
on
E
off
V
DD
= 400V
I
D
= 94A
T
J
= 125°C
L = 100H
E
ON
includes
diode reverse recovery.
Figure 17, Turn-on Switching Waveforms and De nitions
Figure 18, Turn-off Switching Waveforms and De nitions
I
C
D.U.T.
APT30DF60
V
CE
Figure 20, Inductive Switching Test Circuit
V
DD
G
Figure 19, Inductive Switching Test Circuit
T
J
= 125°C
Collector Current
Collector Voltage
Gate Voltage
10%
t
d(on)
90%
10%
t
r
5%
Switching Energy
T
J
= 125°C
Collector Voltage
Collector Current
Gate Voltage
Switching Energy
0
t
d(off)
10%
t
f
90%
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
Drai n
Source
Gate
These dimensions are equal to the TO-247 without the mounting hole.
Drai n
2-Plcs.
19.51 (.768)
20.50 (.807)
19.81 (.780)
21.39 (.842)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
0.76 (.030)
1.30 (.051)
3.10 (.122)
3.48 (.137)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
2.59 (.102)
3.00 (.118)
0.48 (.019)
0.84 (.033)
Drai n
Source
Gate
Dimensions in Millimeters and (Inches)
Drai n
2.29 (.090)
2.69 (.106)
5.79 (.228)
6.20 (.244)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
e3 100% Sn Plated
TO-264 (L) Package Outline
T-MAX
®
(B2) Package Outline
1.016(.040)
APT75DQ60B
050-7214 Rev A 4-2012
Typical Performance Curves
APT94N65B2_LC6

APT97N65LC6

Mfr. #:
Manufacturer:
Microchip / Microsemi
Description:
MOSFET FG, MOSFET, 650V, 97A, TO-264
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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