MTD5P06VT4G Datasheet MTD5P06VT4GV, MTD5P06VT4G, MTD5P06VT4 | P1-P3

July, 2006 − Rev. 6

1 Publication Order Number:

MTD5P06V/D

MTD5P06V

Preferred Device

Power MOSFET

5 Amps, 60 Volts P−Channel DPAK

This Power MOSFET is designed to withstand high energy in the

avalanche and commutation modes. Designed for low voltage, high

speed switching applications in power supplies, converters and power

motor controls, these devices are particularly well suited for bridge

circuits where diode speed and commutating safe operating areas are

critical and offer additional safety margin against unexpected voltage

transients.

Features

• Avalanche Energy Specified

• I

DSS

and V

DS(on)

Specified at Elevated Temperature

• Pb−Free Packages are Available

MAXIMUM RATINGS (T

C

= 25°C unless otherwise noted)

Rating Symbol Value Unit

Drain−to−Source Voltage V

DSS

60 Vdc

Drain−to−Gate Voltage (R

GS

= 1.0 MW)

V

DGR

60 Vdc

Gate−to−Source Voltage

− Continuous

− Non−repetitive (t

p

≤ 10 ms)

V

GS

V

GSM

± 15

± 25

Vdc

Vpk

Drain Current − Continuous @ 25°C

− Continuous @ 100°C

− Single Pulse (t

p

≤ 10 ms)

I

D

I

D

I

DM

5

4

18

Adc

Apk

Total Power Dissipation @ 25°C

Derate above 25°C

Total Power Dissipation @ T

A

= 25°C (Note 2

)

P

D

40

0.27

2.1

W

W/°C

W

Operating and Storage Temperature Range T

J

, T

stg

−55 to

175

°C

Single Pulse Drain−to−Source Avalanche

Energy − Starting T

J

= 25°C

(V

DD

= 25 Vdc, V

GS

= 10 Vdc, Peak

I

L

= 5 Apk, L = 10 mH, R

G

= 25 W)

E

AS

125 mJ

Thermal Resistance

Junction−to−Case

Junction−to−Ambient (Note 1)

Junction−to−Ambient (Note 2)

R

q

JC

R

q

JA

R

q

JA

3.75

100

71.4

°C/W

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from Case for 10 seconds

T

L

260 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. When surface mounted to an FR4 board using the minimum recommended

pad size.

2. When surface mounted to an FR−4 board using the 0.5 sq in drain pad size.

D

S

G

P−Channel

Preferred devices are recommended choices for future use

and best overall value.

http://onsemi.com

60 V

340 mW

R

DS(on)

TYP

5.0 A

I

D

MAXV

(BR)DSS

1

Gate

3

Source

2

Drain

4

Drain

DPAK

CASE 369C

STYLE 2

MARKING

DIAGRAM

Y = Year

WW = Work Week

5P06V = Device Code

G = Pb−Free Package

1

2

3

4

Device Package Shipping

†

ORDERING INFORMATION

MTD5P06V DPAK 75 Units/Rail

MTD5P06VT4 DPAK 2500/Tape & Ree

l

YWW

5

P06VG

MTD5P06VT4G DPAK

(Pb−Free)

2500/Tape & Ree

l

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

s

Brochure, BRD8011/D.

MTD5P06V

http://onsemi.com

2

ELECTRICAL CHARACTERISTICS (T

J

= 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain−Source Breakdown Voltage

(V

GS

= 0 Vdc, I

D

= 0.25 mAdc)

Temperature Coefficient (Positive)

V

(BR)DSS

60

−

61.2

−

Vdc

mV/°C

Zero Gate Voltage Drain Current

(V

DS

= 60 Vdc, V

GS

= 0 Vdc)

(V

DS

= 60 Vdc, V

GS

= 0 Vdc, T

J

= 150°C)

I

DSS

−

10

100

mAdc

Gate−Body Leakage Current (V

GS

= ± 15 Vdc, V

DS

= 0 Vdc) I

GSS

− − 100 nAdc

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

(V

DS

= V

GS

, I

D

= 250 mAdc)

Threshold Temperature Coefficient (Negative)

V

GS(th)

2.0

−

2.8

4.7

4.0

−

Vdc

mV/°C

Static Drain−Source On−Resistance (V

GS

= 10 Vdc, I

D

= 2.5 Adc) R

DS(on)

− 0.34 0.45

W

Drain−Source On−Voltage

(V

GS

= 10 Vdc, I

D

= 5 Adc)

(V

GS

= 10 Vdc, I

D

= 2.5 Adc, T

J

= 150°C)

V

DS(on)

−

2.7

2.6

Vdc

Forward Transconductance

(V

DS

= 15 Vdc, I

D

= 2.5 Adc)

g

FS

1.5 3.6 −

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(V

DS

= 25 Vdc, V

GS

= 0 Vdc,

f = 1.0 MHz)

C

iss

− 367 510 pF

Output Capacitance C

oss

− 140 200

Transfer Capacitance C

rss

− 29 60

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

(V

DD

= 30 Vdc, I

D

= 5 Adc,

V

GS

= 10 Vdc, R

G

= 9.1 W)

t

d(on)

− 11 20 ns

Rise Time t

r

− 26 50

Turn−Off Delay Time t

d(off)

− 17 30

Fall Time t

f

− 19 40

Gate Charge

(See Figure 8)

(V

DS

= 48 Vdc, I

D

= 5 Adc, V

GS

= 10 Vdc)

Q

T

− 12 20 nC

Q

1

− 3.0 −

Q

2

− 5.0 −

Q

3

− 5.0 −

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage

(I

S

= 5 Adc, V

GS

= 0 Vdc)

(I

S

= 5 Adc, V

GS

= 0 Vdc, T

J

= 150°C)

V

SD

−

1.72

1.34

3.5

−

Vdc

Reverse Recovery Time

(I

S

= 5 Adc, V

GS

= 0 Vdc,

dI

S

/dt = 100 A/ms)

t

rr

− 97 −

ns

t

a

− 73 −

t

b

− 24 −

Reverse Recovery Stored Charge Q

RR

− 0.42 −

mC

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from the drain lead 0.25″ from package to center of die)

L

D

− 4.5 −

nH

Internal Source Inductance

(Measured from the source lead 0.25″ from package to source bond pad)

L

S

− 7.5 −

nH

3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

4. Switching characteristics are independent of operating junction temperature.

MTD5P06V

http://onsemi.com

3

TYPICAL ELECTRICAL CHARACTERISTICS

R

DS(on)

, DRAIN−TO−SOURCE RESISTANCE (OHMS)

R

DS(on)

, DRAIN−TO−SOURCE RESISTANCE

(NORMALIZED)

012345

0

7

2

4

10

V

DS

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics

I

D

, DRAIN CURRENT (AMPS)

7

8

23 4 8

0

1

2

3

6

I

D

, DRAIN CURRENT (AMPS)

V

GS

, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

123456

0.2

0.25

0.3

0.35

0.6

R

DS(on)

, DRAIN−TO−SOURCE RESISTANCE (OHMS)

12345 7

0.2

8

0.25

0.3

0.4

I

D

, DRAIN CURRENT (AMPS)

Figure 3. On−Resistance versus Drain Current

and Temperature

I

D

, DRAIN CURRENT (AMPS)

Figure 4. On−Resistance versus Drain Current

and Gate Voltage

−50

1.8

0.2

0.4

0.6

010203040

1

50

10

100

T

J

, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

V

DS

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 6. Drain−To−Source Leakage

Current versus Voltage

I

DSS

, LEAKAGE (nA)

T

J

= 125°C

15 V

−25 0 25 50 75 100 150

T

J

= 25°C

V

DS

≥ 10 V

T

J

= −55°C

25°C

100°C

T

J

= 100°C

25°C

−55°C

T

J

= 25°C

V

GS

= 0 V

V

GS

= 10V

V

GS

= 10 V

V

GS

= 10 V

V

GS

= 10 V

I

D

= 2.5 A

6

8

6

7 V

6 V

5 V

4 V

8 V

9 V

4

5

567

0.4

0.45

7

0.35

96

0.8

1

1.2

1.4

1.6

125

60

89

9

10

8910

0.5

0.55

10

175

MTD5P06VT4G

MTD5P06VT4G

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