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LET16060C

P1-P3P4-P6P7-P9
This is information on a product in full production.
April 2014 DocID022249 Rev 3 1/9
LET16060C
RF power transistor from the LdmoST family
of N-channel enhancement-mode lateral MOSFETs
Datasheet
-
production data
Figure 1. Pin out
Features
• Excellent thermal stability
• Common source configuration
• P
OUT
(@ 28 V)= 60 W with 13.8 dB gain @
1600 MHz
• BeO free package
• In compliance with the 2002/95/EC European
directive
Description
The LET16060C is a common source N-channel
enhancement-mode lateral field-effect RF power
transistor designed for broadband commercial
and industrial applications at frequencies up to
1.6 GHz. The LET16060C is designed for high
gain and broadband performance operating in
common source mode at 28 V. It is ideal for
INMARSAT satellite communications.
M243
epoxy sealed
1
3
2
1. Drain
2. Gate
3. Source
Table 1. Device summary
Order code Package Branding
LET16060C M243 LET16060C
www.st.com
Maximum ratings LET16060C
2/9 DocID022249 Rev 3
1 Maximum ratings
Table 2. Absolute maximum ratings (T
CASE
= 25 °C)
Symbol Parameter Value Unit
V
(BR)DSS
Drain-source voltage 80 V
V
GS
Gate-source voltage -0.5 to +15 V
I
D
Drain current 12 A
P
DISS
Power dissipation (@ T
C
= 70 °C) 100 W
T
J
Max. operating junction temperature 200 °C
T
STG
Storage temperature -65 to +150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
R
th(JC)
Junction-case thermal resistance 1.3 °C/W
DocID022249 Rev 3 3/9
LET16060C Electrical characteristics
9
2 Electrical characteristics
T
C
= 25 °C
Table 4. Static
Symbol Test conditions Min. Typ. Max. Unit
V
(BR)DSS
V
GS
= 0 V; I
DS
= 10 mA 80 V
I
DSS
V
GS
= 0 V; V
DS
= 28 V 1 μA
I
GSS
V
GS
= 5 V; V
DS
= 0 V 1 μA
V
GS(Q)
V
DS
= 28 V; I
D
= 400 mA 2 5 V
V
DS(ON)
V
GS
= 10 V; I
D
= 3 A 0.8 1.2 V
G
FS
V
DS
= 10 V; I
D
= 3 A 2.5 mho
C
ISS
V
GS
= 0 V; V
DS
= 28 V; f = 1 MHz 77 pF
C
OSS
V
GS
= 0 V; V
DS
= 28 V; f = 1 MHz 39 pF
C
RSS
V
GS
= 0 V; V
DS
= 28 V; f = 1 MHz 1.2 pF
Table 5. Dynamic
Symbol Test conditions Min. Typ. Max. Unit
P
OUT
V
DD
= 28 V; I
DQ
= 400 mA; P
IN
= 4 W; f = 1600 MHz 60 70
-
W
G
PS
V
DD
= 28 V; I
DQ
= 400 mA; P
OUT
= 60 W; f = 1600 MHz 12.5 13.8 dB
h
D
V
DD
= 28 V; I
DQ
= 400 mA; P
IN
= 4 W; f = 1600 MHz 50 55 %
Load
mismatch
V
DD
= 28 V; I
DQ
= 400 mA; P
OUT
= 60 W; f = 1600 MHz
All phase angles
20:1 VSWR
Table 6. Thermal data
Symbol Parameter Value Unit
R
thj-case
Thermal resistance junction-case max 1.3 °C/W
Table 7. Impedance data
Frequency (MHz) Z source (Ω) Z load (Ω)
1600 1.3 - j2.3 0.2 - j.96
P1-P3P4-P6P7-P9

LET16060C

Mfr. #:
Buy LET16060C
Manufacturer:
STMicroelectronics
Description:
RF MOSFET Transistors RF PWR Trans LdMOST N-Ch 60W 13.8dB 1600
Lifecycle:
New from this manufacturer.
Delivery:
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