BD250A-S Datasheet BD250A-S, BD250C-S | P1-P3

BD250, BD250A, BD250B, BD250C

PNP SILICON POWER TRANSISTORS

1

JUNE 1973 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

●

Designed for Complementary Use with the

BD249 Series

●

125 W at 25°C Case Temperature

●

25 A Continuous Collector Current

●

40 A Peak Collector Current

●

Customer-Specified Selections Available

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

NOTES: 1. This value applies for t

p

≤ 0.3 ms, duty cycle ≤ 10%.

2. Derate linearly to 150°C case temperature at the rate of 1 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 24 mW/°C.

4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I

B(on)

= -0.4 A, R

BE

= 100 Ω,

V

BE(off)

= 0, R

S

= 0.1 Ω, V

CC

= -20 V.

RATING SYMBOL VALUE UNIT

Collector-emitter voltage (R

BE

= 100 Ω)

BD250

BD250A

BD250B

BD250C

V

CER

-55

-70

-90

-115

V

Collector-emitter voltage (I

C

= -30 mA)

BD250

BD250A

BD250B

BD250C

V

CEO

-45

-60

-80

-100

V

Emitter-base voltage V

EBO

-5 V

Continuous collector current I

C

-25 A

Peak collector current (see Note 1) I

CM

-40 A

Continuous base current I

B

-5 A

Continuous device dissipation at (or below) 25°C case temperature (see Note 2) P

tot

125 W

Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) P

tot

3W

Unclamped inductive load energy (see Note 4) ½LI

C

2

90 mJ

Operating junction temperature range T

j

-65 to +150 °C

Storage temperature range T

stg

-65 to +150 °C

Lead temperature 3.2 mm from case for 10 seconds T

L

250 °C

SOT-93 PACKAGE

(TOP VIEW)

Pin 2 is in electrical contact with the mounting base.

MDTRAAA

B

C

E

1

2

3

OBSOLETE

BD250, BD250A, BD250B, BD250C

PNP SILICON POWER TRANSISTORS

2

JUNE 1973 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

NOTES: 5. These parameters must be measured using pulse techniques, t

p

= 300 µs, duty cycle ≤ 2%.

6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

†

Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

electrical characteristics at 25°C case temperature

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

V

(BR)CEO

Collector-emitter

breakdown voltage

I

C

= -30 mA

(see Note 5)

I

B

= 0

BD250

BD250A

BD250B

BD250C

-45

-60

-80

-100

V

I

CES

Collector-emitter

cut-off current

V

CE

= -55 V

V

CE

= -70 V

V

CE

= -90 V

V

CE

= -115 V

V

BE

=0

V

BE

=0

V

BE

=0

V

BE

=0

BD250

BD250A

BD250B

BD250C

-0.7

mA

I

CEO

Collector cut-off

current

V

CE

= -30 V

V

CE

= -60 V

I

B

=0

I

B

=0

BD250/250A

BD250B/250C

-1

mA

I

EBO

Emitter cut-off

current

V

EB

= -5 V I

C

=0 -1 mA

h

FE

Forward current

transfer ratio

V

CE

= -4 V

V

CE

= -4 V

V

CE

= -4 V

I

C

=-1.5A

I

C

= -15A

I

C

= -25A

(see Notes 5 and 6)

25

10

5

V

CE(sat)

Collector-emitter

saturation voltage

I

B

= -1.5 A

I

B

= -5 A

I

C

= -15A

I

C

= -25A

(see Notes 5 and 6)

-1.8

-4

V

BE

Base-emitter

voltage

V

CE

= -4 V

V

CE

= -4 V

I

C

= -15 A

I

C

= -25 A

(see Notes 5 and 6)

-2

-4

V

h

fe

Small signal forward

current transfer ratio

V

CE

= -10 V I

C

= - 1A f = 1 kHz 25

|

h

fe

|

Small signal forward

current transfer ratio

V

CE

= -10 V I

C

= -1A f = 1 MHz 3

thermal characteristics

PARAMETER MIN TYP MAX UNIT

R

θJC

Junction to case thermal resistance 1°C/W

R

θJA

Junction to free air thermal resistance 42 °C/W

resistive-load-switching characteristics at 25°C case temperature

PARAMETER TEST CONDITIONS

†

MIN TYP MAX UNIT

t

on

Tu r n -o n t i m e I

C

= -5 A

V

BE(off)

= 5 V

I

B(on)

= -0.5 A

R

L

= 5 Ω

I

B(off)

= 0.5 A

t

p

= 20 µs, dc ≤ 2%

0.2 µs

t

off

Turn-off time 0.4 µs

OBSOLETE

BD250, BD250A, BD250B, BD250C

PNP SILICON POWER TRANSISTORS

3

JUNE 1973 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

TYPICAL CHARACTERISTICS

Figure 1. Figure 2.

Figure 3.

TYPICAL DC CURRENT GAIN

vs

COLLECTOR CURRENT

I

C

- Collector Current - A

-0·1 -1·0 -10 -100

h

FE

- DC Current Gain

1

10

100

1000

TCS636AD

V

CE

= -4 V

T

C

= 25°C

t

p

= 300 µs, duty cycle < 2%

COLLECTOR-EMITTER SATURATION VOLTAGE

vs

BASE CURRENT

I

B

- Base Current - A

-0·001 -0·01 -0·1 -1·0 -10 -100

V

CE(sat)

- Collector-Emitter Saturation Voltage - V

-0·01

-0·1

-1·0

-10

TCS636AB

I

C

= -25 A

I

C

= -20 A

I

C

= -15 A

I

C

= -10 A

I

C

= -300 mA

I

C

= -1 A

I

C

= -3 A

BASE-EMITTER VOLTAGE

vs

COLLECTOR CURRENT

I

C

- Collector Current - A

-0·1 -1·0 -10 -100

V

BE

- Base-Emitter Voltage - V

-0·6

-0·8

-1·0

-1·2

-1·4

-1·6

-1·8

TCS636AC

V

CE

= -4 V

T

C

= 25°C

OBSOLETE

BD250A-S

BD250A-S

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