TLP620-4(F)

TLP620,TLP6202,TLP6204
2014-09-22
1
TOSHIBA Photocoupler GaAs Ired & PhotoTransistor
TLP620, TLP6202, TLP6204
Programmable Controllers
AC / DCInput Module
Telecommunication
The TOSHIBA TLP620, 2 and 4 consists of a phototransistor
optically coupled to two gallium arsenide infrared emitting diode
connected in inverse parallel.
The TLP6202 offers two isolated channels in an eight lead plastic DIP,
while the TLP6204 provides four isolated channels in a sixteen plastic
DIP.
Collectoremitter voltage: 55V (min.)
Current transfer ratio: 50% (min.)
Rank GB: 100% (min.)
Pin Configurations
(top view)
TLP620
1
2
4
3
1 : ANODE
CATHODE
2 : CATHODE
ANODE
3 : EMITTER
4 : COLLECTOR
1
2
4
3
5
6
7
8
TLP620-2
1, 3 : ANODE
CATHODE
2, 4 : CATHODE
ANODE
5, 7 : EMITTER
6, 8 : COLLECTOR
TLP620-4
1
2
4
3
5
6
7
8
9
10
11
12
13
14
15
16
1, 3, 5, 7 : ANODE, CATHODE
2, 4, 6, 8 : CATHODE, ANODE
9, 11, 13, 15 : EMITTER
10, 12, 14, 16 : COLLECTOR
TOSHIBA 115B2
Weight: 0.26 g (typ.)
TOSHIBA 1110C4
Weight: 0.54 g (typ.)
TOSHIBA 1120A3
Weight: 1.1 g (typ.)
Unit in mm
TLP620,TLP6202,TLP6204
2014-09-22
2
Made In Japan Made In Thailand
UL recognized E67349 *1 E152349 *1
BSI approved 7426, 7427 *2 7426, 7427 *2
*1 UL1577
*2 BS EN60065: 2002, BS EN60950-1: 2002
Isolation voltage: 5000V
rms
(min.)
Option (D4) type
VDE approved: DIN EN 60747-5-2, certificate no.40009302
Maximum operating insulation voltage: 890V
PK
Highest permissible over voltage: 8000V
PK
(Note) When an EN 60747-5-2 approved type is needed,
please designate the “Option(D4)”.
Creepage distance: 6.4mm (min.)
Clearance: 6.4mm (min.)
Insulation thickness: 0.4mm (min.)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic Symbol
Rating
Unit
TLP620
TLP6202
TLP6204
LED
Forward current I
F (RMS)
60 50 mA
Forward current derating I
F
/ °C 0.7 (Ta 39°C) 0.5 (Ta 25°C) mA / °C
Pulse forward current I
FP
1 (100μs pulse, 100pps) A
Power dissipation (1 circuit) P
D
100 70 mW
Power dissipation derating P
D
/ °C 1.0 0.7 mW / °C
Junction temperature T
j
125 °C
Detector
Collectoremitter voltage V
CEO
55 V
Emittercollector voltage V
ECO
7 V
Collector current I
C
50 mA
Collector power dissipation
(1 circuit)
P
C
150 100 mW
Collector power dissipation
derating (1 circuit) (Ta 25°C)
P
C
/ °C 1.5 1.0 mW / °C
Junction temperature T
j
125 °C
Storage temperature range T
stg
55~125 °C
Operating temperature range T
opr
55~100 °C
Lead soldering temperature T
sold
260 (10s) °C
Total package power dissipation P
T
250 150 mW
Total package power dissipation
derating (Ta 25°C, 1 circuit)
P
T
/ °C 2.5 1.5 mW / °C
Isolation voltage BV
S
5000 (AC, 1 min., RH 60%)
V
rms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
TLP620,TLP6202,TLP6204
2014-09-22
3
Recommended Operating Conditions
Characteristic Symbol Min. Typ. Max. Unit
Supply voltage V
CC
5 24 V
Forward current I
F (RMS)
16 20 mA
Collector current IC 1 10 mA
Operating temperature T
opr
25 85 °C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Individual Electrical Characteristics
(Ta = 25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
LED
Forward voltage V
F
I
F
= ±10mA 1.0 1.15 1.3 V
Forward current I
F
V
F
= ±0.7V 2.5 20 μA
Capacitance C
T
V = 0, f = 1MHz 60 pF
Detector
Collectoremitter
breakdown voltage
V
(BR) CEO
I
C
= 0.5mA 55 V
Emittercollector
breakdown voltage
V
(BR) ECO
I
E
= 0.1mA 7 V
Collector dark current I
CEO
V
CE
= 24V 10 100 nA
V
CE
= 24V, Ta = 85°C 2 50 μA
Capacitance
(collector to emitter)
C
CE
V
CE
= 0, f = 1MHz 10 pF
Coupled Electrical Characteristics
(Ta = 25°C)
Characteristic Symbol Test Condition MIn. Typ. Max. Unit
Current transfer ratio I
C
/ I
F
I
F
= ±5mA, V
CE
= 5V
Rank GB
50 600
%
100 600
Saturated CTR I
C
/ I
F (sat)
IF = ±1mA, V
CE
= 0.4V
Rank GB
60
%
30
Collectoremitter saturation
voltage
V
CE (sat)
I
C
= 2.4mA, I
F
= ±8mA 0.4
V
I
C
= 0.2 mA, I
F
= ±1 mA
Rank GB
0.2
0.4
Offstate collector current I
C (off)
V
F
= ± 0.7V, V
CE
= 24V 1 10 μA
CTR symmetry I
C (ratio)
I
C
(I
F
= 5mA) / I
C
(I
F
= +5mA) 0.33 1 3

TLP620-4(F)

Mfr. #:
Manufacturer:
Toshiba
Description:
Transistor Output Optocouplers 55Vceo 5000Vrms 4 channels
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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