VS-ST223C..C Series
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Revision: 02-Jun-15
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Document Number: 93672
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Fig. 16 - Maximum On-State Energy Power Loss Characteristics
Fig. 17 - Gate Characteristics
1E1
1E2
1E3
1E4
1E5
1E1 1E2 1E3 1E4
Pulse B a sew idth (µs)
20 joules per pulse
2
1
0.5
0.3
0.2
0.1
10
Peak On-state Current (A)
ST223C ..C Series
Sinu s o id a l p ulse
4
tp
1E1 1E2 1E3 1E4
Pulse Basewidth (µs)
20 jo ules p er pulse
2
1
0.5
0.3
0.2
0.1
ST22 3C..C Series
Rectangular pulse
di/d t = 50A/µs
10
5
tp
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD
IG D
(b)
(a)
Tj=2 5 °C
Tj=125 °C
Tj=-40 °C
(1)
(2)
Instanta ne ou s G ate C urrent (A )
Instanta neo us Ga te V olta g e (V )
Rectangular gate pulse
a ) R e c o m m e n d e d lo a d lin e fo r
b ) R e c o m m e n d e d lo a d lin e f o r
<=30% rated di/dt : 10V, 10ohm s
rated di/dt : 20V , 10o hms; tr<=1 µs
tr<=1 µs
(1) PGM = 10W , tp = 20 m s
(2) PGM = 20W , tp = 10 m s
(3) PGM = 40W , tp = 5m s
(4) PGM = 60W, tp = 3.3ms
(3 )
De vice : ST223C ..C Se rie s Frequen cy Lim ite d b y PG (A V )
(4)
