Part Number: XZTNI54W
2.0x1.25mm INFRARED EMITTING DIODE
Oct 11,2016 XDSA1794 V9-X Layout: Maggie L.
P. 1/4
Features
● Long life and robust package
● Standard Package: 2,000pcs/ Reel
● MSL (Moisture Sensitivity Level): 3
● RoHS compliant
Package Schematics
Notes:
1. All dimensions are in millimeters (inches).
2. Tolerance is ±0.1(0.004") unless otherwise noted.
3. Specifications are subject to change without notice.
Absolute Maximum Ratings
(T
A
=25°C)
Infrared
(GaAs)
Unit
Reverse Voltage V
R
5 V
Forward Current I
F
50 mA
Forward Current (Peak)
1/100 Duty Cycle
10us Pulse Width
i
FS
1200 mA
Power Dissipation P
D
80 mW
Operating Temperature T
A
-40 ~ +85
°C
Storage Temperature Tstg -40 ~ +85
Infrared
(GaAs)
Unit
Forward Voltage (Typ.)
(I
F
=20mA)
V
F
1.2 V
Forward Voltage (Max.)
(I
F
=20mA)
V
F
1.6 V
Reverse Current (Max.)
(V
R
=5V)
I
R
10 uA
Wavelength of Peak
Emission CIE127-2007*(Typ.)
(I
F
=20mA)
λP 940* nm
Spectral Line Full Width
At Half-Maximum (Typ.)
(I
F
=20mA)
△λ
50 nm
Capacitance (Typ.)
(V
F
=0V, f=1MHz)
C 90 pF
Operating Characteristics
(T
A
=25°C)
Part
Number
Emitting
Material
Lens-color
Wavelength
CIE127-2007*
nm
λP
Viewing
Angle
2θ 1/2
min. typ.
XZTNI54W GaAs Water Clear
1.2
0.8*
2.8
1.8*
940* 160°
Radiant Intensity
CIE127-2007*
(Po
=
mW/sr)
@20mA
*Radiant Intensity value and wavelength are in accordance with CIE127-2007 standards.
A Relative Humidity between 40% and 60% is recommended in
ESD-protected work areas to reduce static build up during assembly
process (Reference JEDEC/JESD625-A and JEDEC/J-STD-033)
