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VS-12TTS08-M3

P1-P3P4-P6P7-P7
VS-12TTS08-M3
www.vishay.com
Vishay Semiconductors
Revision: 21-Aug-17
4
Document Number: 96286
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - On-State Voltage Drop Characteristics
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
Peak Half Sine Wave Forward Current (A)
Number of Equal Amplitude Half Cycle
Current Pulses (N)
110100
40
50
60
70
80
90
100
110
At any rated load condition and with
rated V
rrm
applied following surge.
Initial T
J
= 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Peak Half Sine Wave Forward Current (A)
0.01 0.1 1 10
40
50
60
70
80
90
100
110
120
Maximum non-repetitive surge current
vs. pulse train duration.
Initial T
J
= T
J
max.
No voltage reapplied
Rated V
rrm
reapplied
Pulse Train Duration (s)
Instantaneous On-State Voltage (V)
Instantaneous On-State Current (A)
1
10
100
1000
0.5 1 1.5 2 2.5 3 3.5
T
J
= 25 °C
T
J
= 125 °C
Z
thJC
-
Transient
Thermal Impedance (°C/W)
Square Wave Pulse Duration (s)
0.01
0.1
1
10
0.0001 0.001 0.01 0.1 1
Steady state value
(DC operation)
Single Pulse
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
VS-12TTS08-M3
www.vishay.com
Vishay Semiconductors
Revision: 21-Aug-17
5
Document Number: 96286
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-12TTS08-M3 50 1000 Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?96154
Part marking information www.vishay.com/doc?95028
2
- Current ratings (12 = 12.5 A)
3
- Circuit conguration:
4
- Package:
5
6
- Voltage rating (08 = 800 V)
T = single thyristor
- Type of silicon
T = TO-220
S = standard recovery rectier
7
Device code
62 43 5 7
12 T T S 08 -M3VS-
1
1 - Vishay Semiconductors product
-
Environmental digit:
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
Outline Dimensions
www.vishay.com
Vishay Semiconductors
Revision: 03-Aug-17
1
Document Number: 96154
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3L TO-220AB
DIMENSIONS in millimeters and inches
Notes
(1)
Dimensioning and tolerancing as per ASME Y14.5M-1994
(2)
Lead dimension and finish uncontrolled in L1
(3)
Dimension D, D1, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured
at the outermost extremes of the plastic body
(4)
Dimension b1, b3, and c1 apply to base metal only
(5)
Controlling dimensions: inches
(6)
Thermal pad contour optional within dimensions E, H1, D2, and E1
(7)
Outline conforms to JEDEC
®
TO-220, except D2 (minimum)
SYMBOL
MILLIMETERS INCHES
NOTES SYMBOL
MILLIMETERS INCHES
NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.25 4.65 0.167 0.183 D2 11.68 12.88 0.460 0.507 6
A1 1.14 1.40 0.045 0.055 E 10.11 10.51 0.398 0.414 3, 6
A2 2.50 2.92 0.098 0.115 E1 6.86 8.89 0.270 0.350 6
b 0.69 1.01 0.027 0.040 e 2.41 2.67 0.095 0.105
b1 0.38 0.97 0.015 0.038 4 e1 4.88 5.28 0.192 0.208
b2 1.20 1.73 0.047 0.068 H1 6.09 6.48 0.240 0.255 6, 7
b3 1.14 1.73 0.045 0.068 4 L 13.52 14.02 0.532 0.552
c 0.36 0.61 0.014 0.024 L1 3.32 3.82 0.131 0.150 2
c1 0.36 0.56 0.014 0.022 4 Ø P 3.54 3.91 0.139 0.154
D 14.85 15.35 0.585 0.604 3 Q 2.60 3.00 0.102 0.118
D1 8.38 9.02 0.330 0.355
13
2
C
C
D
D
3 x b23 x b
(b, b2)
b1, b3
Lead tip
0.014 AB
M M
0.015 AB
M M
Conforms to JEDEC
®
outline TO-220AB
(6)
(6)
(6)
(7)
L1
(2)
Detail B
Section C - C and D - D
Base metal Plating
(4)
(4)
c1
c
(6)
(6)
Ø P
E
Q
D
L
c
D1
e
e1
2 x
A
B
A
A
A
C
A2
A1
Thermal pad
H1
(E)
(H1)
D2
Detail B
E1
View A - A
P1-P3P4-P6P7-P7

VS-12TTS08-M3

Mfr. #:
Buy VS-12TTS08-M3
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers New Input Thyristor - TO-220-e3
Lifecycle:
New from this manufacturer.
Delivery:
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