MBR2050PTHC0G

CREAT BY ART
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- UL Recognized File # E-326243
- Halogen-free according to IEC 61249-2-21 definition
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
V
RRM
35 45 50 60 90 100 150 200 V
V
RMS
24 31 35 42 63 70 105 140 V
V
DC
35 45 50 60 90 100 150 200 V
I
F(AV)
A
I
RRM
A
dV/dt V/μs
R
θJC
O
C/W
T
J
O
C
T
STG
O
C
Document Number: DS_D1309026 Version: G13
MBR2035PT thru MBR20200PT
Taiwan Semiconductor
Dual Common Cathode Schottk
y
Rectifier
FEATURES
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
TO-247AD (TO-3P)
MECHANICAL DATA
Case: TO-247AD (TO-3P)
Polarity: As marked
Mounting torque: 10 in-lbs maximum
Weight: 6.1 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25 unless otherwise noted)
PARAMETER SYMBOL
MBR
2035
PT
MBR
2045
PT
MBR
2050
PT
MBR
2060
PT
MBR
2090
PT
MBR
20100
PT
MBR
20150
PT
MBR
20200
PT
UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current 20
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
150 A
Maximum instantaneous forward voltage (Note 2)
I
F
=10A, T
J
=25
I
F
=10A, T
J
=125
I
F
=20A, T
J
=25
I
F
=20A, T
J
=125
V
F
V
-0.80
Operating junction temperature range
Storage temperature range - 55 to +150
Maximum reverse current @ rated VR T
J
=25
T
J
=125
I
R
mA
0.1
15
Note 1: 2.0μs Pulse Width, f=1.0KHz
Peak repetitive forward current
(Rated V
R
, Square wave, 20KHz)
I
FRM
20 A
Peak repetitive reverse surge Current (Note 1) 1.0 0.5
Typical thermal resistance 1
0.85 0.95
10 5
0.57 0.70 0.75 0.92
0.84 0.95 0.95 1.02
Voltage rate of change,(Rated V
R
)
10,000
- 55 to +150
Note 2: Pulse Test : 300μs Pulse Width, 1% Duty Cycle
0.72 0.85 0.85 0.98
PART NO.
PART NO.
MBR2060PT
MBR2060PT
MBR2060PT
(TA=25 unless otherwise noted)
Document Number: DS_D1309026 Version: G13
MBR2035PT thru MBR20200PT
Taiwan Semiconductor
ORDERING INFORMATION
AEC-Q101
QUALIFIED
PACKING CODE
GREEN COMPOUND
CODE
PACKAGE PACKING
MBR20xxPT
(Note 1)
Prefix "H" C0 Suffix "G" TO-3P 30 / Tube
Note 1: "xx" defines voltage from 35V (MBR2035PT) to 200V (MBR20200PT)
EXAMPLE
PREFERRED P/N
AEC-Q101
QUALIFIED
PACKING CODE
GREEN COMPOUND
CODE
DESCRIPTION
MBR2060PT C0 C0
MBR2060PT C0G C0 G Green compound
MBR2060PTHC0 H C0 AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
0
5
10
15
20
25
0 50 100 150
AVERAGE FORWARD CURRENT (A)
CASE TEMPERATURE (
o
C)
FIG.1- FORWARD CURRENT DERATING CURVE
RESISTIVE OR
INDUCTIVE LOAD
WITH HEATSINK
0
50
100
150
200
250
300
1 10 100
PEAK FORWARD SURGE CURRENT (A)
NUMBER OF CYCLES AT 60 Hz
FIG. 2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT PER LEG
8.3ms Single Half Sine Wave
JEDEC Method
0.001
0.01
0.1
1
10
100
0 20 40 60 80 100 120 140
INSTANTANEOUS REVERSE CURRENT (mA)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 4- TYPICAL REVERSE CHARACTERISTICS
PER LEG
TJ=125
TJ=25
MBR2035PT-MBR2045PT
MBR2050PT-MBR20200PT
0.01
0.1
1
10
100
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
INSTANTANEOUS FORWARD CURRENT (A)
FORWARD VOLTAGE (V)
FIG. 3- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS PER LEG
TJ=125
MBR2035PT-2045PT
MBR2050PT-2060PT
MBR2090PT-20200PT
TJ=25
Pulse Width=300μs
1% Duty Cycle
Min Max Min Max
A 15.90 16.40 0.626 0.646
B 7.90 8.20 0.311 0.323
C 5.70 6.20 0.224 0.244
D 20.80 21.30 0.819 0.839
E 3.50 4.10 0.138 0.161
F 19.70 20.20 0.776 0.795
G - 4.30 - 0.169
H 2.90 3.40 0.114 0.134
I 1.93 2.18 0.076 0.086
J 2.97 3.22 0.117 0.127
K 1.12 1.22 0.044 0.048
L 5.20 5.70 0.205 0.224
M 4.90 5.16 0.193 0.203
N 2.70 3.00 0.106 0.118
O 0.51 0.76 0.020 0.030
P/N = Marking Code
G = Green Compound
YWW = Date Code
F = Factory Code
Document Number: DS_D1309026 Version: G13
MARKING DIAGRAM
MBR2035PT thru MBR20200PT
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
DIM.
Unit (mm) Unit (inch)
100
1000
10000
0.1 1 10 100
JUNCTION CAPACITANCE (pF) A
REVERSE VOLTAGE (V)
FIG. 5- TYPICAL JUNCTION CAPACITANCE PER LEG
f=1.0MHz
Vsig=50mVp-p
MBR2035PT-MBR2045PT
MBR2050PT-MBR20200PT
0.1
1
10
100
0.01 0.1 1 10 100
TRANSIENT THERMAL
IMPEDANCE (/W)
T-PULSE DURATION. (sec)
FIG. 6- TYPICAL TRANSIENT THERMAL IMPEDANCE
PER LEG

MBR2050PTHC0G

Mfr. #:
Manufacturer:
Taiwan Semiconductor
Description:
DIODE ARRAY SCHOTTKY 50V TO247AD
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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