www.vishay.com
2
Document Number: 71856
S-80793-Rev. G, 14-Apr-08
Vishay Siliconix
SUD50N03-09P
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min.
Typ.
a
Max. Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 µA
30
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
1.0 3.0
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
1
µA
V
DS
= 30 V, V
GS
= 0 V, T
J
= 125 °C
50
On-State Drain Current
b
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
50 A
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= 10 V, I
D
= 20 A
0.0076 0.0095
Ω
V
GS
= 10 V, I
D
= 20 A, T
J
= 125 °C
0.015
V
GS
= 4.5 V, I
D
= 20 A
0.0115 0.014
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 20 A
20 S
Dynamic
a
Input Capacitance
C
iss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
2200
pFOutput Capacitance
C
oss
410
Reverse Transfer Capacitance
C
rss
180
Total Gate Charge
c
Q
g
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 50 A
11 16
nC
Gate-Source Charge
c
Q
gs
7.5
Gate-Drain Charge
c
Q
gd
5.0
Gate Resistance
R
g
0.5 1.5 2.1 Ω
Tur n - On D el ay T im e
c
t
d(on)
V
DD
= 15 V, R
L
= 0.3 Ω
I
D
≅ 50 A, V
GEN
= 10 V, R
g
= 2.5 Ω
915
ns
Rise Time
c
t
r
15 25
Turn-Off Delay Time
c
t
d(off)
22 35
Fall Time
c
t
f
812
Source-Drain Diode Ratings and Characteristic T
C
= 25 °C
Pulsed Current
I
SM
100 A
Diode Forward Voltage
b
V
SD
I
F
= 50 A, V
GS
= 0 V
1.2 1.5 V
Source-Drain Reverse Recovery Time
t
rr
I
F
= 50 A, di/dt = 100 A/µs
35 70 ns
Output Characteristics
0
30
60
90
120
0246810
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
5 V
V
GS
= 10 thru 6 V
3 V
4 V
2 V
Transfer Characteristics
0
30
60
90
120
0123456
V
GS
- Gate-to-Source Voltage (V)
-
Drain Current (A)
I
D
25 °C
- 55 °C
T
C
= 125 °C
