© Semiconductor Components Industries, LLC, 2017
February, 2017 − Rev. 0
1 Publication Order Number:
NCP5183/D
NCP5183, NCV5183
High Voltage High Current
High and Low Side Driver
The NCP5183 is a High Voltage High Current Power MOSFET
Driver providing two outputs for direct drive of 2 N−channel power
MOSFETs arranged in a half−bridge (or any other high−side +
low−side) configuration.
It uses the bootstrap technique to insure a proper drive of the
High−side power switch. The driver works with 2 independent inputs
to accommodate any topology (including half−bridge, asymmetrical
half−bridge, active clamp and full−bridge).
Features
Automotive Qualified to AEC Q100
Voltage Range: up to 600 V
dV/dt Immunity ±50 V/ns
Gate Drive Supply Range from 9 V to 18 V
Output Source / Sink Current Capability 4.3 A / 4.3 A
3.3 V and 5 V Input Logic Compatible
Extended Allowable Negative Bridge Pin Voltage Swing to –10 V
Matched Propagation Delays between Both Channels
Propagation Delay 120 ns typically
Under V
CC
LockOut (UVLO) for Both Channels
Pin to Pin Compatible with Industry Standards
These are Pb−free Devices
Typical Application
Power Supplies for Telecom and Datacom
Half−Bridge and Full−Bridge Converters
Push−Pull Converters
High Voltage Synchronous−Buck Converters
Motor Controls
Electric Power Steering
Class−D Audio Amplifiers
www.onsemi.com
ORDERING INFORMATION
Device Package Shipping
NCP5183DR2G SOIC−8
(Pb−Free)
2500 / Tape
& Reel
SOIC−8 NB
CASE 751−07
MARKING DIAGRAM
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
PIN CONNECTIONS
HIN
LIN
GND
DRVL VCC
DRVH
VB
HB
1
8
NCx5183
ALYW G
G
1
8
x = P or V
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
G = Pb−Free Package
NCV5183DR2G SOIC−8
(Pb−Free)
2500 / Tape
& Reel
(Note: Microdot may be in either location)
NCP5183, NCV5183
www.onsemi.com
2
Figure 1. Application Schematic
C
Vcc
M1
M2
C
BOOT
8
5
6
7
1
2
3
4
VB
DRVH
HB
VCC
HIN
LIN
GND
DRVL
CONTROLLER
Vcc
V
HV
LOAD
D
BOOT
R
BOOT
Figure 2. Simplified Block Diagram
Level
Shifter
Pulse
Trigger
S
R
Q
Q
UV
Detect
DRVH
HB
VB
DRVL
V
CC
HIN
V
CC
LIN
GND
DELAY
UV
Detect
Table 1. PIN FUNCTION DESCRIPTION
Pin No. (SOIC8) Pin Name Description
1 HIN High Side Logic Input
2 LIN Low Side Logic Input
3 GND Ground
4 DRVL Low Side Gate Drive Output
5 V
CC
Main Power Supply
6 HB Bootstrap Return or High Side Floating Supply Return
7 DRVH High Side Gate Drive Output
8 VB Bootstrap Power Supply
NCP5183, NCV5183
www.onsemi.com
3
Table 2. ABSOLUTE MAXIMUM RATINGS
All voltages are referenced to GND pin
Rating
Symbol Value Units
Input Voltage Range V
CC
−0.3 to 18 V
Input Voltage on LIN and HIN pins V
LIN
, V
HIN
−0.3 to 18 V
High Side Boot pin Voltage V
B
(higher of {−0.3 ; V
CC
– 1.5}) to 618 V
High Side Bridge pin Voltage V
HB
V
B
− 18 to V
B
+ 0.3 V
High Side Floating Voltage V
B
– V
HB
−0.3 to 18 V
High Side Output Voltage V
DRVH
V
HB
– 0.3 to V
B
+ 0.3 V
Low Side Output Voltage V
DRVL
−0.3 to V
CC
+ 0.3 V
Allowable output slew rate dV
HB
/dt 50 V/ns
Maximum Operating Junction Temperature T
J(max)
150 °C
Storage Temperature Range TSTG −55 to 150 °C
ESD Capability, Human Body Model (Note 1) ESDHBM 3 kV
ESD Capability, Charged Device Model (Note 1) ESDCDM 1 kV
Lead Temperature Soldering
Reflow (SMD Styles Only), Pb−Free Versions (Note 2)
T
SLD
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per AEC−Q100−002 (EIA/JESD22−A114)
ESD Charged Device Model tested per AEC−Q100−11 (EIA/JESD22−C101E)
Latchup Current Maximum Rating: 150 mA per JEDEC standard: JESD78
2. For information, please refer to our Soldering and Mounting Techniques Reference Manual, SOLDERRM/D
Table 3. THERMAL CHARACTERISTICS
Rating Symbol Value Units
Thermal Characteristics SO8 (Note 3)
Thermal Resistance, Junction−to−Air (Note 4)
R
q
JA
183
°C/W
3. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.
4. Values based on copper area of 645 mm
2
(or 1 in
2
) of 1 oz copper thickness and FR4 PCB substrate.
Table 4. RECOMMENDED OPERATING CONDITIONS (Note 5)
All voltages are referenced to GND pin
Rating Symbol Min Max Units
Input Voltage Range V
CC
10 17 V
High Side Floating Voltage V
B
– V
HB
10 17 V
High Side Bridge pin Voltage V
HB
−1 580 V
High Side Output Voltage V
DRVH
V
HB
V
B
V
Low Side Output Voltage V
DRVL
GND V
CC
V
Input Voltage on LIN and HIN pins V
LIN
, V
HIN
GND V
CC
− 2 V
Operating Junction Temperature Range T
J
−40 125 °C
5. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.

NCP5183DR2G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Gate Drivers HIGH AND LOW SIDE DRIVER
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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