TSM260P02CX6 RFG Datasheet TSM260P02CX6 RFG | P1-P3

TSM260P02

Taiwan Semiconductor

Document Number: DS_P0000208 1 Version: B15

P-Channel Power MOSFET

-20V, -6.5A, 26mΩ

FEATURES

● Fast switching

● Suitable for -1.8V Gate Drive Applications

● Pb-free plating

● RoHS compliant

● Halogen-free mold compound

KEY PERFORMANCE PARAMETERS

PARAMETER

VALUE

UNIT

V

DS

-20

V

I

D

-6.5

A

R

DS(on)

(max)

V

GS

= -4.5V

26

mΩ

V

GS

= -2.5V

32

V

GS

= -1.8V

40

Q

g

19.5

nC

APPLICATION

● Battery Pack

● Portable Devices

SOT-26

SOT-23

Notes: Moisture sensitivity level: level 3. Per J-STD-020

ABSOLUTE MAXIMUM RATINGS (T

A

= 25°C unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

V

DS

-20

V

Gate-Source Voltage

V

GS

±10

V

Continuous Drain Current

T

C

= 25°C

I

D

-6.5

A

T

C

= 100°C

-4.1

Pulsed Drain Current

(Note 1)

I

DM

-26

A

Total Power Dissipation

T

C

= 25°C

P

DTOT

1.56

W

Operating Junction Temperature

T

J

150

ºC

Operating Junction and Storage Temperature Range

T

J

, T

STG

- 55 to +150

°C

THERMAL PERFORMANCE

PARAMETER

SYMBOL

LIMIT

UNIT

Junction to Ambient Thermal Resistance

R

ӨJA

80

°C/W

Notes: R

ӨJA

is the sum of the junction-to-case and case-to-ambient thermal resistances. R

ӨJA

is guaranteed by design while

R

ӨCA

is determined by the user’s board design. R

ӨJA

is shown for single device operation on FR-4 PCB in still air.

TSM260P02

Taiwan Semiconductor

Document Number: DS_P0000208 2 Version: B15

ELECTRICAL SPECIFICATIONS (T

A

= 25°C unless otherwise noted)

PARAMETER

CONDITIONS

SYMBOL

MIN

TYP

MAX

UNIT

Static

(Note 2)

Drain-Source Breakdown Voltage

V

GS

= 0V, I

D

= -250µA

BV

DSS

-20

--

V

Gate Threshold Voltage

V

DS

= V

GS

, I

D

= -250µA

V

GS(TH)

-0.3

-0.6

-1.0

V

Gate Body Leakage

V

GS

= ±10V, V

DS

= 0V

I

GSS

--

±100

nA

Zero Gate Voltage Drain Current

V

DS

= -20V, V

GS

= 0V

I

DSS

--

-1

µA

V

DS

= -16V, T

J

= 125ºC

--

-10

Drain-Source On-State Resistance

V

GS

= -4.5V, I

D

= -5A

R

DS(on)

--

21

26

mΩ

V

GS

= -2.5V, I

D

= -4A

--

26

32

V

GS

= -1.8V, I

D

= -3A

--

32

40

Forward Transconductance

V

DS

= -10V, I

S

= -5A

g

fs

--

15

--

S

Dynamic

(Note 3)

Total Gate Charge

V

DS

= -10V, I

D

= -5A,

V

GS

=- 4.5V

Q

g

--

19.5

--

nC

Gate-Source Charge

Q

gs

--

2

--

Gate-Drain Charge

Q

gd

--

3.6

--

Input Capacitance

V

DS

= -15V, V

GS

= 0V,

F = 1.0MHz

C

iss

--

1670

--

pF

Output Capacitance

C

oss

--

220

--

Reverse Transfer Capacitance

C

rss

--

120

--

Switching

Turn-On Delay Time

V

DD

= -10V, I

D

= -1A,

V

GS

= -4.5V, R

GEN

=25Ω

t

d(on)

--

10.4

--

ns

Turn-On Rise Time

t

r

--

37.5

--

Turn-Off Delay Time

t

d(off)

--

89.1

--

Turn-Off Fall Time

t

f

--

24.6

--

Source-Drain Diode

Forward Voltage

V

GS

= 0V, I

S

= -1A

V

SD

--

-1

V

Continuous Forward Current

Integral reverse diode

in the MOSFET

I

S

--

-6.5

A

Pulse Forward Current

I

SM

--

-26

A

Notes:

1. Pulse width limited by safe operating area

2. Pulse test: PW ≤ 300µs, duty cycle ≤ 2%

3. Switching time is essentially independent of operating temperature.

TSM260P02

Taiwan Semiconductor

Document Number: DS_P0000208 3 Version: B15

ORDERING INFORMATION

PART NO.

PACKAGE

PACKING

TSM260P02CX RFG

SOT-23

3,000pcs / 7” Reel

TSM260P02CX6 RFG

SOT-26

3,000pcs / 7” Reel

Note:

1. Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC

2. Halogen-free according to IEC 61249-2-21 definition

TSM260P02CX6 RFG

TSM260P02CX6 RFG

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