FDR8508P

FDR8508P
FDR8508P Rev. C
FDR8508P
Dual P-Channel, Logic Level, PowerTrench
TM
MOSFET
General Description
These P-Channel 2.5V specified MOSFETs are produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize the
on state resistance and yet maintain low gate charge for
superior switching performance.
Applications
Load switch
DC/DC converter
Motor driving
March 1999
Features
-3.0 A, -30 V. R
DS(ON)
= 0.052 @ V
GS
= -10V
R
DS(ON)
= 0.086 @ V
GS
= -4.5V.
Low gate charge. (8nC typical).
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability.
Small footprint (38% smaller than a standard SO-8);
low profile package (1 mm thick); power handling
capability similar to SO-8.
1999 Fairchild Semiconductor Corporation
Absolute Maximum Ratings T
A
= 25°C unless otherwise noted
Symbol Parameter FDR8508P Units
V
DSS
Drain-Source Voltage -30 V
V
GSS
Gate-Source Voltage
±20
V
I
D
Drain Current - Continuous (Note 1a) -3 A
- Pulsed -20
P
D
Power Dissipation 0.8 W
T
J
, T
stg
Operating and Storage Junction Temperature Range -55 to +150
°C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient (Note 1a) 156
°C/W
R
θ
JC
Thermal Resistance, Junction-to-Case (Note 1) 40
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape Width Quantity
.8508 FDR8508P 13 12mm 3000 units
SuperSOT-8
D2
D2
D1
D1
S2
G2
S1
G1
pin #1
1
5
7
8
2
6
3
4
FDR8508P
FDR8508P Rev. C
Electrical Characteristics T
A
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= -250 µA
-30 V
BV
DSS
/
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= -250 µA, Referenced to 25°C
24
mV/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= -24 V, V
GS
= 0 V -1
µA
I
GSSF
Gate-Body Leakage Current V
GS
= 20 V, V
DS
= 0 V 100 nA
I
GSSR
Gate-Body Leakage Current V
GS
= -20 V, V
DS
= 0 V -100 nA
On Characteristics (Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= -250 µA
-1 -1.8 -3 V
V
GS(th)
/
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= -250 µA, Referenced to 25°C
-4
mV/°C
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= -10 V, I
D
= -3 A
V
GS
= -10 V, I
D
= -3 A, T
J
= 125°C
V
GS
= -4.5 V, I
D
= -2.3 A
0.040
0.057
0.058
0.052
0.078
0.086
I
D(on)
On-State Drain Current V
GS
= -10 V, V
DS
= -5 V -20 A
g
FS
Forward Transconductance V
DS
= -5 V, I
D
= -3 A 9 mS
Dynamic Characteristics
C
iss
Input Capacitance 750 pF
C
oss
Output Capacitance 220 pF
C
rss
Reverse Transfer Capacitance
V
DS
= -15 V, V
GS
= 0 V, f = 1.0 MHz
100 pF
Switching Characteristics (Note 2)
t
d(on)
Turn-On Delay Time 12 22 ns
t
r
Turn-On Rise Time 14 25 ns
t
d(off)
Turn-Off Delay Time 24 38 ns
t
f
Turn-Off Fall Time
V
DD
= -15 V, I
D
= -1 A,
V
GS
= -10 V, R
GEN
= 6
16 27 ns
Q
g
Total Gate Charge 8 12 nC
Q
gs
Gate-Source Charge 1.8 nC
Q
gd
Gate-Drain Charge
V
DS
= -15 V, I
D
= -3A,
V
GS
= -5 V,
3nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current -0.67 A
V
SD
Drain-Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= -0.67 A (Note 2) -0.75 -1.2 V
Notes:
1. R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
surface of the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the users board design. R
θJA
shown below for single
device operation on FR-4 board instill air.
156
O
C/W when mounted on a 0.0025 in
2
pad of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
FDR8508P
FDR8508P Rev. C
Typical Characteristics
Figure 1: On-Region Characteristics
Figure 2: On-Resistance Variation
vs Drain Current and Gate Voltage
Figure 3: On-Resistance Variation
vs Temperature
Figure 4: On-Resistance Variation
vs Gate-To-Source Voltage
Figure 5: Transfer Characteristics
Figure 6: Body Diode Forward Voltage
Variation vs Source Current
and Temperature
0
4
8
12
16
20
012345
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
V
GS
=-10V
-6.0V
-4.5V
-4.0V
-3.5V
-3.0V
0.02
0.04
0.06
0.08
0.1
0.12
0 4 8 121620
-I
D
, DRAIN CURRENT (A)
NORMALIZED ON-RESISTANCE
V
GS
=-3.5V
-4.0V
-4.5V
-5.5V
-7.0V
-10V
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
-50 -25 0 25 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
=-3A
V
GS
=-10V
0
0.04
0.08
0.12
0.16
0.2
0246810
-V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS(ON)
, ON RESISTANCE (OHM)
T
J
=125
o
C
o
I
D
=-1.5A
0
4
8
12
16
20
12345
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
V
GS
=-5V
T
J
=-55
o
C
25
o
125
o
C
0.0001
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4
-V
SD
, BODY DIODE VOLTAGE (V)
-I
S
, REVERSE DRAIN CURRENT (A)
T
J
=125
o
C
25
o
C
-55
o
C
V
GS
=0

FDR8508P

Mfr. #:
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET SSOT-8 P-CH DUAL 30V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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