MMBZxxVxL, SZMMBZxxVxL Series
www.onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Power Dissipation @ 1.0 ms (Note 1) @ T
L
≤ 25°C P
pk
40 Watts
Total Power Dissipation on FR−5 Board (Note 2)
@ T
A
= 25°C
Derate above 25°C
°P
D
°
225
1.8
mW
mW/°C
Thermal Resistance Junction−to−Ambient
R
q
JA
556 °C/W
Total Power Dissipation on Alumina Substrate (Note 3)
@ T
A
= 25°C
Derate above 25°C
°P
D
°
300
2.4
°
mW
mW/°C
Thermal Resistance Junction−to−Ambient
R
q
JA
417 °C/W
Junction and Storage Temperature Range T
J
, T
stg
− 55 to +150 °C
Lead Solder Temperature − Maximum (10 Second Duration) T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Nonrepetitive current pulse per Figure 5 and derate above T
A
= 25°C per Figure 6.
2. FR−5 = 1.0 x 0.75 x 0.62 in.
3. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
V
BR
Maximum Temperature Coefficient of V
BR
I
F
Forward Current
V
F
Forward Voltage @ I
F
Uni−Directional TVS
I
PP
I
F
V
I
I
R
I
T
V
RWM
V
C
V
BR
V
F
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)
(V
F
= 0.9 V Max @ I
F
= 10 mA)
Device*
Device
Marking
V
RWM
I
R
@ V
RWM
Breakdown Voltage V
C
@ I
PP
(Note 5)
V
BR
V
BR
(Note 4) (V) @ I
T
V
C
I
PP
Volts nA Min Nom Max mA V A
mV/5C
MMBZ15VDLT1G/T3G 15D 12.8 100 14.3 15 15.8 1.0 21.2 1.9 12
(V
F
= 1.1 V Max @ I
F
= 200 mA)
Device*
Device
Marking
V
RWM
I
R
@ V
RWM
Breakdown Voltage V
C
@ I
PP
(Note 5)
V
BR
V
BR
(Note 4) (V) @ I
T
V
C
I
PP
Volts nA Min Nom Max mA V A
mV/5C
MMBZ27VCLT1G/T3G 27C 22 50 25.65 27 28.35 1.0 38 1.0 26
MMBZ39VCLT1G/T3G 39C 31.2 50 37.05 39 40.95 1.0 55 0.76 35.3
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. V
BR
measured at pulse test current I
T
at an ambient temperature of 25°C.
5. Surge current waveform per Figure 5 and derate per Figure 6
*Include SZ-prefix devices where applicable.
