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NTR1P02LT1G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2001
October, 2016 − Rev. 14
1 Publication Order Number:
NTR1P02LT1/D
NTR1P02L, NVTR01P02L
Power MOSFET
−20 V, −1.3 A, P−Channel
SOT−23 Package
These miniature surface mount MOSFETs low R
DS(on)
assure
minimal power loss and conserve energy, making these devices ideal
for use in space sensitive power management circuitry. Typical
applications are DC−DC converters and power management in
portable and battery−powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
Features
• Low R
DS(on)
Provides Higher Efficiency and Extends Battery Life
• Miniature SOT−23 Surface Mount Package Saves Board Space
• NVTR Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• Pb−Free and Halide−Free Packages are Available
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating Symbol Value Unit
Drain−to−Source Voltage V
DSS
−20 V
Gate−to−Source Voltage − Continuous V
GS
±12 V
Drain Current
− Continuous @ T
A
= 25°C
− Pulsed Drain Current (t
p
≤ 10 ms)
I
D
I
DM
−1.3
−4.0
A
A
Total Power Dissipation @ T
A
= 25°C P
D
400 mW
Operating and Storage Temperature Range T
J
, T
stg
− 55 to
150
°C
Thermal Resistance − Junction−to−Ambient
R
q
JA
300 °C/W
Maximum Lead Temperature for Soldering
Purposes, (1/8″ from case for 10 s)
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
D
G
S
Device Package Shipping
†
ORDERING INFORMATION
P−Channel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
NTR1P02LT3G SOT−23
(Pb−Free)
10,000 Tape &
Reel
−20 V
220 mW @ −4.5 V
R
DS(on)
Max
−1.3 A
I
D
MaxV
(BR)DSS
SOT−23
CASE 318
STYLE 21
MARKING DIAGRAM &
PIN ASSIGNMENT
2
P02 = Specific Device Code
M = Date Code*
G = Pb−Free Package
1
3
NTR1P02LT1G SOT−23
(Pb−Free)
3000 Tape & Ree
l
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
P02 M G
G
1
Gate
2
Source
Drain
3
NVTR01P02LT1G SOT−23
(Pb−Free)
3000 Tape & Ree
l
www.onsemi.com
NTR1P02L, NVTR01P02L
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Parameter
Test Condition Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Volt-
age
(V
GS
= 0 V, I
D
= −10 mA)
V
(BR)DSS
−20 V
Zero Gate Voltage Drain Current (V
DS
= −16 V, V
GS
= 0 V)
(V
DS
= −16 V, V
GS
= 0 V,
T
J
= 125°C)
I
DSS
−1.0
−10
mA
Gate−Body Leakage Current (V
GS
= ± 12 V, V
DS
= 0 V) I
GSS
±100 nA
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= −250 mA)
V
GS(th)
−0.7 −1.0 −1.25 V
Static Drain−to−Source
On−Resistance
(V
GS
= −4.5 V, I
D
= −0.75 A)
(V
GS
= −2.5 V, I
D
= −0.5 A)
r
DS(on)
0.140
0.200
0.22
0.35
W
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= −5.0 V) C
iss
225
pF
Output Capacitance (V
DS
= −5.0 V) C
oss
130
Transfer Capacitance (V
DS
= −5.0 V) C
rss
55
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
(V
GS
= −4.5 V, V
DD
= −5.0 V,
I
D
= −1.0 A, R
L
= 5.0 W,
R
G
= 6.0 W)
t
d(on)
7.0
ns
Rise Time t
r
15
Turn−Off Delay Time t
d(off)
18
Fall Time t
f
9
Total Gate Charge (V
DS
= −16 V, I
D
= −1.5 A,
V
GS
= −4.5 V)
Q
T
3.1 nC
SOURCE−DRAIN DIODE CHARACTERISTICS
Continuous Current I
S
−0.6 A
Pulsed Current I
SM
−0.75
Forward Voltage (Note 2) (V
GS
= 0 V, I
S
= −0.6 A) V
SD
−1.0 V
Reverse Recovery Time
(I
S
= −1.0 A, V
GS
= 0 V,
dI
S
/dt = 100 A/ms)
t
rr
16
ns
t
a
11
t
b
5.5
Reverse Recovery Stored Charge Q
RR
8.5 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
NTR1P02L, NVTR01P02L
www.onsemi.com
3
2.0 V
2
3
1
0
0.30
0.25
0.20
0.15
0.10
0.05
0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
V
GS
, GATE−TO−SOURCE VOLTAGE (V) I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (
W
)
T
J
, JUNCTION TEMPERATURE (°C) V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
I
DSS
, LEAKAGE (nA)
1.6
1.2
0.8
0.4
10
0.01
100
1000
0
1.5
3
1.0
21
0.5
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
0
0.30
0.25
42
0.15
0.10
610
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
3.0
−50 50250−25 75 125100
1.0 2.
5
1.5
111616
0
5
0.2 0.50.40.3 0.6 0.7 10.8
150
2.0
4 2.0
V
DS
≥ 5 V
T
J
= 25°C
T
J
= −55°C
T
J
= 100°C
I
D
= 1.0 A
T
J
= 25°C
V
GS
= 0 V
T
J
= 125°C
T
J
= 25°C
T
J
= 100°C
I
D
= 0.75 A
V
GS
= 4.5 V
V
GS
= 2.4 V to 3.0 V
1.2 V
8 0.9
1.4 V
1.6 V
1.8 V
T
J
= 25°C
T
J
= 25°C
V
GS
= 4.5 V
V
GS
= 2.5 V
1
0.1
2.5
2.2 V
0.20
0.1
0.6
1.0
1.4
P1-P3P4-P5

NTR1P02LT1G

Mfr. #:
Buy NTR1P02LT1G
Manufacturer:
ON Semiconductor
Description:
MOSFET -20V -1.3A P-Channel
Lifecycle:
New from this manufacturer.
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