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IXYS reserves the right to change limits, test conditions and dimensions.
VHF 55 VHO 55
VKO 55 VKF 55
20070731a
Features
• Package with copper base plate
• Isolation voltage 3000 V~
• Planar passivated chips
• Low forward voltage drop
• 1/4" fast-on power terminals
Applications
• Supplies for DC power equipment
• Input rectifiers for PWM inverter
• Battery DC power supplies
• Field supply for DC motors
Advantages
• Easy to mount with two screws
• Space and weight savings
• Improved temperature and power
cycling capability
• Small and light weight
Dimensions in mm (1 mm = 0.0394")
Data according to IEC 60747 refer to a single diode/thyristor unless otherwise stated
① for resistive load at bridge output.
V
RSM
V
RRM
Type
V
DSM
V
DRM
VV
800 800 xxx 55-08io7
1200 1200 xxx 55-12io7
1400 1400 xxx 55-14io7
1600 1600 xxx 55-16io7
xxx = type
I
dAV
= 53 A
V
RRM
= 800-1600 V
Symbol Test Conditions Maximum Ratings
I
dAV
① T
K
= 85°C, module 53 A
I
dAVM
① module 53 A
I
FRMS
, I
TRMS
per leg 41 A
I
FSM
, I
TSM
T
VJ
= 45°C; t = 10 ms (50 Hz), sine 550 A
V
R
= 0 V t = 8.3 ms (60 Hz), sine 600 A
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine 500 A
V
R
= 0 V t = 8.3 ms (60 Hz), sine 550 A
I
2
t T
VJ
= 45°C t = 10 ms (50 Hz), sine 1520 A
2
s
V
R
= 0 V t = 8.3 ms (60 Hz), sine 1520 A
2
s
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine 1250 A
2
s
V
R
= 0 V t = 8.3 ms (60 Hz), sine 1250 A
2
s
(di/dt)
cr
T
VJ
= 125°C repetitive, I
T
= 50 A 150 A/μs
f = 50 Hz, t
P
= 200 μs
V
D
= 2/3 V
DRM
I
G
= 0.3 A, non repetitive, I
T
= 1/2 • I
dAV
500 A/μs
di
G
/dt = 0.3 A/μs
(dv/dt)
cr
T
VJ
= T
VJM
; V
DR
= 2/3 V
DRM
1000 V/μs
R
GK
= ∞; method 1 (linear voltage rise)
V
RGM
10 V
P
GM
T
VJ
= T
VJM
t
p
= 30 μs ≤ 10 W
I
T
= I
TAVM
t
p
= 500 μs ≤ 5W
t
p
= 10 ms ≤ 1W
P
GAVM
0.5 W
T
VJ
-40...+125 °C
T
VJM
125 °C
T
stg
-40...+125 °C
V
ISOL
50/60 Hz, RMS t = 1 min 2500 V~
I
ISOL
≤ 1 mA t = 1 s 3000 V~
M
d
Mounting torque (M5) 5 ± 15 % Nm
(10-32 UNF) 44 ± 15 % lb.in.
Weight 110 g
Preliminary data
Single Phase
Rectifier Bridge
VHF 55
VHO 55
VKF 55 VKO 55
