APT33N90JCCU2 Datasheet APT33N90JCCU2 | P1-P3

APT33N90JCCU2

APT33N90JCCU2 – Rev 1 October, 2012

www.microsemi.com

1

–

6

G

S

D

K

ISOTOP



Absolute maximum ratings

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

Symbol Parameter Max ratings Unit

V

DSS

Drain - Source Breakdown Voltage 900 V

T

c

= 25°C 33

I

D

Continuous Drain Current

T

c

= 80°C 25

I

DM

Pulsed Drain current 75

A

V

GS

Gate - Source Voltage ±20 V

R

DSon

Drain - Source ON Resistance 120

m

P

D

Maximum Power Dissipation T

c

= 25°C 290 W

I

AR

Avalanche current (repetitive and non repetitive) 8.8 A

E

AR

Repetitive Avalanche Energy 2.9

E

AS

Single Pulse Avalanche Energy 1940

mJ

Application

 AC and DC motor control

 Switched Mode Power Supplies

 Power Factor Correction

 Brake switch

Features



- Ultra low R

DSon

- Low Miller capacitance

- Ultra low gate charge

- Avalanche energy rated

 SiC Schottky Diode

- Zero reverse recovery

- Zero forward recovery

- Temperature Independent switching behavior

- Positive temperature coefficient on VF

 ISOTOP

®

Package (SOT-227)

 Very low stray inductance

 High level of integration

Benefits

 Outstanding performance at high frequency operation

 Stable temperature behavior

 Very rugged

 Direct mounting to heatsink (isolated package)

 Low junction to case thermal resistance

 Easy paralleling due to positive T

C

of V

CEsat

 RoHS Compliant

ISOTOP

®

Boost chopper

Super Junction MOSFET

SiC chopper diode

V

DSS

= 900V

R

DSon

= 120m max @ Tj = 25°C

I

D

= 33A @ Tc = 25°C

K

D

G

S

APT33N90JCCU2

APT33N90JCCU2 – Rev 1 October, 2012

www.microsemi.com

2

–

6

All ratings @ T

j

= 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

V

GS

= 0V,V

DS

= 900V

T

j

= 25°C 100

I

DSS

Zero Gate Voltage Drain Current

V

GS

= 0V,V

DS

= 900V

T

j

= 125°C 500

µA

R

DS(on)

Drain – Source on Resistance

V

GS

= 10V, I

D

= 26A 100 120

m

V

GS(th)

Gate Threshold Voltage V

GS

= V

DS

, I

D

= 3mA 2.5 3 3.5 V

I

GSS

Gate – Source Leakage Current V

GS

= ±20 V, V

DS

= 0V 100 nA

Dynamic Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

C

iss

Input Capacitance 6.8

C

oss

Output Capacitance

V

GS

= 0V ; V

DS

= 100V

f = 1MHz

0.33

nF

Q

g

Total gate Charge 270

Q

gs

Gate – Source Charge 32

Q

gd

Gate – Drain Charge

V

GS

= 10V

V

Bus

= 400V

I

D

= 26A

115

nC

T

d(on)

Turn-on Delay Time 70

T

r

Rise Time 20

T

d(off)

Turn-off Delay Time 400

T

f

Fall Time

Inductive Switching (125°C)

V

GS

= 10V

V

Bus

= 600V

I

D

= 26A

R

G

= 7.5

25

ns

E

on

Turn-on Switching Energy 0.9

E

off

Turn-off Switching Energy

Inductive switching @ 25°C

V

GS

= 10V ; V

Bus

= 600V

I

D

= 26A ; R

G

= 7.5

0.75

mJ

E

on

Turn-on Switching Energy 1.3

E

off

Turn-off Switching Energy

Inductive switching @ 125°C

V

GS

= 10V ; V

Bus

= 600V

I

D

= 26A ; R

G

= 7.5

0.85

mJ

SiC chopper diode ratings and characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

V

RRM

Maximum Peak Repetitive Reverse Voltage

1200 V

T

j

= 25°C 32 200

I

RM

Maximum Reverse Leakage Current V

R

=1200V

T

j

= 175°C 56 1000

µA

I

F

DC Forward Current Tc = 100°C 10 A

T

j

= 25°C 1.6 1.8

V

F

Diode Forward Voltage I

F

= 10A

T

j

= 175°C 2.3 3

V

Q

C

Total Capacitive Charge

I

F

= 10A, V

R

= 600V

di/dt =500A/µs

40 nC

f = 1MHz, V

R

= 200V 96

C Total Capacitance

f = 1MHz, V

R

= 400V 69

pF

APT33N90JCCU2

APT33N90JCCU2 – Rev 1 October, 2012

www.microsemi.com

3

–

6

Thermal and package characteristics

Symbol Characteristic Min Typ Max Unit

CoolMOS 0.43

R

thJC

Junction to Case Thermal Resistance

SiC Diode 1.65

R

thJA

Junction to Ambient (IGBT & Diode) 20

°C/W

V

ISOL

RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz

2500 V

T

J

,T

STG

Storage Temperature Range -40 150

T

L

Max Lead Temp for Soldering:0.063” from case for 10 sec 300

°C

Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) 1.5 N.m

Wt Package Weight 29.2 g

SOT-227 (ISOTOP

®

) Package Outline

31.5 (1.240)

31.7 (1.248)

Dimensions in Millimeters and (Inches)

7.8 (.307)

8.2 (.322)

30.1 (1.185)

30.3 (1.193)

38.0 (1.496)

38.2 (1.504)

14.9 (.587)

15.1 (.594)

11.8 (.463)

12.2 (.480)

8.9 (.350)

9.6 (.378)

Hex Nut M4

(4 places)

0.75 (.030)

0.85 (.033)

12.6 (.496)

12.8 (.504)

25.2 (0.992)

25.4 (1.000)

1.95 (.077)

2.14 (.084)

*

r = 4.0 (.157)

(2 places)

4.0 (.157)

4.2 (.165)

(2 places)

W=4.1 (.161)

W=4.3 (.169)

H=4.8 (.187)

H=4.9 (.193)

(4 places)

3.3 (.129)

3.6 (.143)

Emitter terminals are shorted

internally. Current handling

capability is equal for either

Emitter terminal.

Typical CoolMOS performance Curve

Hard

switching

ZCS

ZVS

0

50

100

150

200

250

10 15 20 25 30

I

D

, Drain Current (A)

Frequency (kHz)

Operating Frequency vs Drain Current

V

DS

=600V

D=50%

R

G

=7.5Ω

T

J

=125°C

T

C

=75°C

Switching Energy vs Current

Eon

Eoff

0

1

2

5 10152025303540

I

D

, Drain Current (A)

Eon and Eoff (mJ)

V

DS

=600V

R

G

=7.5Ω

T

J

=125°C

L=100µH

ON resistance vs Temperature

0.5

1.0

1.5

2.0

2.5

3.0

25 50 75 100 125 150

T

J

, Junction Temperature (°C)

R

DS(on)

, Drain to Source ON resistance

(Normalized)

Switching Energy vs Gate Resistance

Eon

Eoff

0

1

2

3

5 101520253035

Gate Resistance (Ohms)

Switching Energy (mJ)

V

DS

=600V

I

D

=26A

T

J

=125°C

L=100µH

Source

Gate

Drain

Cathode

APT33N90JCCU2

APT33N90JCCU2

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