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CRS04(TE85L,Q,M)

P1-P3P4-P5
CRS04
2017-04-17
1
TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type
CRS04
Switching Mode Power Supply Applications
Portable Equipment Battery Applications
• Forward voltage: V
FM
= 0.49 V (max)
• Average forward current: I
F(AV)
= 1 A
• Repetitive peak reverse voltage: V
RRM
= 40 V
• Suitable for compact assembly due to small surface-mount package
“S-FLAT
TM
” (Toshiba package name)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics Symbol Rating Unit
Repetitive peak reverse voltage V
RRM
40 V
Average forward current I
F (AV)
1 (Note 1)
A
Non-repetitive peak forward surge current I
FSM
20 (50 Hz) A
Junction temperature T
j
-55 to 150 °C
Storage temperature T
stg
-55 to 150 °C
Note 1: Ta = 31°C
Device mounted on a glass-epoxy board
(board size: 50 mm × 50 mm, land size: 6 mm × 6 mm)
Rectangular waveform (α = 180°), V
R
= 20 V
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Peak forward voltage
V
FM(1)
I
FM
= 0.1 A ― 0.395 ―
V
V
FM(2)
I
FM
= 0.7 A ― 0.475 0.49
V
FM(3)
I
FM
= 1 A ― 0.51 ―
Repetitive peak reverse current
I
RRM(1)
V
RRM
= 5 V ― 0.6 ―
μA
I
RRM(2)
V
RRM
= 40 V ― ― 100
Junction capacitance
C
j
V
R
= 10 V, f = 1 MHz ― 47 ―
pF
Thermal resistance (junction to ambient) R
th(j-a)
Device mounted on a ceramic board
(board size: 50 mm × 50 mm)
(soldering land: 2 mm × 2 mm)
(board thickness: 0.64 mm)
― ― 70
°C/W
Device mounted on a glass-epoxy board
(board size: 50 mm × 50 mm)
(soldering land: 6 mm × 6 mm)
(board thickness: 1.6 mm)
― ― 140
Thermal resistance (junction to lead) R
th(j-ℓ)
― ― ― 20 °C/W
Unit
: mm
JEDEC ―
JEITA ―
TOSHIBA 3-2A1A
Weight: 0.013 g (typ.)
Start of commercial production
1999-07
CRS04
2017-04-17
2
Marking
Abbreviation Code Part No.
S4 CRS04
Land Pattern Dimensions (for reference only)
Handling Precaution
Schottky barrier diodes have reverse current characteristics compared to other diodes.
There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage.
Please take forward and reverse loss into consideration during design.
The absolute maximum ratings denote the absolute maximum ratings, which are rated values and must not be exceeded
during operation, even for an instant. The following are the general derating methods that we recommend when you
design a circuit with a device.
V
RRM
: Use this rating with reference to the above. V
RRM
has a temperature coefficient of 0.1%/°C. Take this
temperature coefficient into account designing a device at low temperature.
I
F(AV)
: We recommend that the worst case current be no greater than 80% of the absolute maximum rating of
I
F(AV)
and T
j
be below 120°C. When using this device, take the margin into consideration by using an
allowable Tamax-I
F(AV)
curve.
I
FSM
: This rating specifies the non-repetitive peak current. This is only applied for an abnormal operation,
which seldom occurs during the lifespan of the device.
T
j
: Derate this rating when using a device in order to ensure high reliability. We recommend that the device
be used at a T
j
of below 120°C.
Thermal resistance between junction and ambient fluctuates depending on the device’s mounting condition. When using
a device, design a circuit board and a soldering land size to match the appropriate thermal resistance value.
Please refer to the Rectifiers databook for further information.
2.8
Unit: mm
CRS04
2017-04-17
3
Transient thermal resistance
r
th(j-a)
(°C/W)
Maximum allowable lead ltemperature
Ta max (°C)
Instantaneous forward voltage V
F
(V)
I
F
– V
F
Instantaneous forward current
I
F
(A)
Average forward current I
F(AV)
(A)
P
F(AV)
– I
F(AV)
Average forward power dissipation
P
F(AV)
(W)
Average forward current I
F(AV)
(A)
Ta max – I
F(AV)
Ceramic substrate (substrate size:
50 mm × 50 mm, soldering land: 2 mm × 2 mm)
Maximum allowable ltemperature
Ta max (°C)
Average forward current I
F(AV)
(A)
Ta max – I
F(AV)
Glass-epoxy substrate (substrate size:
50 mm × 50 mm, soldering land: 6 mm × 6 mm)
time t (ms)
0
160
0.2 0.6 0.8 1.0 1.4 1.6 0.4 1.2
0
40
20
60
120
100
80
α = 60°
120°
DC
0°
Rectangular waveform
α
V
R
= 20 V
I
F(AV)
Conduction angle α
180°
140
180°
120°
0
0
40
160
0.2 0.6 0.8 1.0 1.4 1.6
20
60
120
100
0.4 1.2
80
α = 60°
DC
360°
0°
α
V
R
= 20 V
I
F (AV)
Conduction
angle α
140
Rectangular
waveform
0 0.2 0.6 0.8 1.0 1.4 1.6 0.4 1.2 0.2 0.6 0.8 1.0 1.4 1.6 0.4 1.2
0.8
0
0.4
0
0.2
0.1
0.3
0.5
0°
Rectangular
waveform
α
Conduction angle α
α = 60°
120°
180°
DC
0.6
0.7
0 0.2
0.01
0.1
1
10
0.4 0.6 0.8 1.0 1.4 1.2
75°C
25°C
125°C
T
j
= 150°C
Pulse measurement
r
th(j-a)
– t
0.1
1
100
1000
1 10 100 100000
1000 10000
10
Device mounted on a ceramic board:
board size:
50 mm × 50 mm
S
oldering land: 2.0 mm × 2.0 mm
board
thickness: 0.64 mm
Device mounted on a glass-epoxy board:
board size: 50 mm × 50 mm
Soldering land: 6.0 mm × 6.0 mm
board thickness: 1.6 mm
P1-P3P4-P5

CRS04(TE85L,Q,M)

Mfr. #:
Buy CRS04(TE85L,Q,M)
Manufacturer:
Toshiba
Description:
Schottky Diodes & Rectifiers Diode Schottky 40V 1A Vf=0.55V
Lifecycle:
New from this manufacturer.
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