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BD676A

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 14
Publication Order Number:
BD676/D
BD676G, BD676AG,
BD678G, BD678AG,
BD680G, BD680AG,
BD682G, BD682TG
Plastic Medium-Power
Silicon PNP Darlingtons
This series of plastic, medium−power silicon PNP Darlington
transistors can be used as output devices in complementary
general−purpose amplifier applications.
Features
• High DC Current Gain
• Monolithic Construction
• BD676, 676A, 678, 678A, 680, 680A, 682 are complementary
with BD675, 675A, 677, 677A, 679, 679A, 681
• BD678, 678A, 680, 680A are equivalent to MJE 700, 701, 702, 703
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector-Emitter Voltage
BD676G, BD676AG
BD678G, BD678AG
BD680G, BD680AG
BD682G, BD682TG
V
CEO
45
60
80
100
Vdc
Collector-Base Voltage
BD676G, BD676AG
BD678G, BD678AG
BD680G, BD680AG
BD682G, BD682TG
V
CB
45
60
80
100
Vdc
Emitter-Base Voltage V
EB
5.0 Vdc
Collector Current I
C
4.0 Adc
Base Current I
B
0.1 Adc
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
P
D
40
0.32
W
W/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
Junction−to−Case
R
q
JC
3.13 °C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
4.0 AMP DARLINGTON
POWER TRANSISTORS
PNP SILICON
45, 60, 80, 100 VOLT, 40 WATT
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
ORDERING INFORMATION
MARKING DIAGRAMS
Y = Year
WW = Work Week
BD6xx = Device Code
xx = 76, 78, 80, 82, or 82T
G = Pb−Free Package
COLLECTOR 2, 4
BASE 3
EMITTER 1
TO−225
CASE 77−09
STYLE 1
1
2
3
YWW
BD6xxG
YWW
BD6xxAG
BD676G, BD676AG, BD678G, BD678AG, BD680G, BD680AG, BD682G, BD682TG
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
(I
C
= 50 mAdc, I
B
= 0)
BD676G, BD676AG
BD678G, BD678AG
BD680G, BD680AG
BD682G, BD682TG
BV
CEO
45
60
80
100
−
−
−
−
Vdc
Collector Cutoff Current
(V
CE
= Half Rated V
CEO
, I
B
= 0)
I
CEO
− 500
mAdc
Collector Cutoff Current
(V
CB
= Rated BV
CEO
, I
E
= 0)
(V
CB
= Rated BV
CEO
. I
E
= 0, T
C
= 100°C)
I
CBO
−
−
0.2
2.0
mAdc
Emitter Cutoff Current
(V
BE
= 5.0 Vdc, I
C
= 0)
I
EBO
− 2.0
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 1)
(I
C
= 1.5 Adc, V
CE
= 3.0 Vdc)
BD676G, BD678G, BD680G, BD682G
(I
C
= 2.0 Adc, V
CE
= 3.0 Vdc)
BD676AG, BD678AG, BD680AG
h
FE
750
750
−
−
−
Collector−Emitter Saturation Voltage (Note 1)
(I
C
= 1.5 Adc, I
B
= 30 mAdc)
BD678G, BD680G, BD682G
(I
C
= 2.0 Adc, I
B
= 40 mAdc)
BD676AG, BD678AG, BD680AG
V
CE(sat)
−
−
2.5
2.8
Vdc
Base−Emitter On Voltage (Note 1)
(I
C
= 1.5 Adc, V
CE
= 3.0 Vdc)
BD678G, BD680G, BD682G
(I
C
= 2.0 Adc, V
CE
= 3.0 Vdc)
BD676AG, BD678AG, BD680AG
V
BE(on)
−
−
2.5
2.5
Vdc
DYNAMIC CHARACTERISTICS
Small−Signal Current Gain
(I
C
= 1.5 Adc, V
CE
= 3.0 Vdc, f = 1.0 MHz)
h
fe
1.0 −
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
50
40
10
5.0
0
15 30 45 60 75 105 135 150 165
Figure 1. Power Temperature Derating
T
C
, CASE TEMPERATURE (°C)
P
D
, POWER DISSIPATION (WATTS)
12090
45
20
15
30
25
35
Figure 2. DC Safe Operating Area
5.0
1.0
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
2.0
1.0
0.5
0.05
2.0 5.0 10 50 100
BONDING WIRE LIMIT
THERMAL LIMIT at T
C
= 25°C
SECONDARY BREAKDOWN LIMIT
0.2
0.1
I
C
, COLLECTOR CURRENT (AMP)
T
C
= 25°C
BD676, 676A
BD678, 678A
BD680, 680A
BD682
20
BD676G, BD676AG, BD678G, BD678AG, BD680G, BD680AG, BD682G, BD682TG
http://onsemi.com
3
There are two limitations on the power handling ability of
a transistor average junction temperature and secondary
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; e.g., the transistor must not be subjected to greater
dissipation than the curves indicate.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by secondary breakdown.
Figure 3. Darlington Circuit Schematic
BASE
PNP
BD676G, BD676AG
BD678G, BD678AG
BD680G, BD680AG
BD682G, BD682TG
COLLECTOR
EMITTER
[ 8.0 k [ 120
ORDERING INFORMATION
Device Package Shipping
BD676G TO−225
(Pb−Free)
500 Units / Box
BD676AG TO−225
(Pb−Free)
500 Units / Box
BD678G TO−225
(Pb−Free)
500 Units / Box
BD678AG TO−225
(Pb−Free)
500 Units / Box
BD680G TO−225
(Pb−Free)
500 Units / Box
BD680AG TO−225
(Pb−Free)
500 Units / Box
BD682G TO−225
(Pb−Free)
500 Units / Box
BD682TG TO−225
(Pb−Free)
50 Units / Rail
P1-P3P4-P4

BD676A

Mfr. #:
Buy BD676A
Manufacturer:
ON Semiconductor
Description:
TRANS PNP DARL 45V 4A TO225
Lifecycle:
New from this manufacturer.
Delivery:
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