©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
BC237/238/239
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Electrical Characteristics
T
a
=25°C unless otherwise noted
h
FE
Classification
Symbol Parameter Value Units
V
CES
Collector-Emitter Voltage : BC237
: BC238/239
50
30
V
V
V
CEO
Collector-Emitter Voltage : BC237
: BC238/239
45
25
V
V
V
EBO
Emitter-Base Voltage : BC237
: BC238/239
6
5
V
V
I
C
Collector Current (DC) 100 mA
P
C
Collector Power Dissipation 500 mW
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CEO
Collector-Emitter Breakdown Voltage
: BC237
: BC238/239
I
C
=2mA, I
B
=0 45
25
V
V
BV
EBO
Emitter Base Breakdown Voltage
: BC237
: BC238/239
I
E
=1µA, I
C
=0
6
5
V
V
I
CES
Collector Cut-off Current
: BC237
: BC238/239
V
CE
=50V, V
BE
=0
V
CE
=30V, V
BE
= 0
0.2
0.2
15
15
nA
nA
h
FE
DC Current Gain V
CE
=5V, I
C
= 2 m A 1 2 0 8 0 0
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
=10mA, I
B
=0.5mA
I
C
=100mA, I
B
=5mA
0.07
0.2
0.2
0.6
V
V
V
BE
(sat) Collector-Base Saturation Voltage I
C
=10mA, I
B
=0.5mA
I
C
=100mA, I
B
=5mA
0.73
0.87
0.83
1.05
V
V
V
BE
(on) Base-Emitter On Voltage V
CE
=5V, I
C
=2mA 0.55 0.62 0.7 V
f
T
Current Gain Bandwidth Product V
CE
=3V, I
C
=0.5mA, f=100MHz
V
CE
=5V, I
C
=10mA, f=100MHz 150
85
250
MHz
MHz
C
ob
Output Capacitance V
CB
=10V, I
E
=0, f=1MHz 3.5 6 pF
C
ib
Input Base Capacitance V
EB
=0.5V, I
C
=0, f=1MHz 8 pF
NF
Noise Figure
: BC237/238
: BC239
: BC239
V
CE
=5V, I
C
=0.2mA,
f=1KHz R
G
=2KΩ
V
CE
=5V, I
C
=0.2mA
R
G
=2KΩ, f=30~15KHz
210
4
4
dB
dB
dB
Classification A B C
h
FE
120 ~ 220 180 ~ 460 380 ~ 800
BC237/238/239
Switching and Amplifier Applications
• Low Noise: BC239
1. Collector 2. Base 3. Emitter
TO-92
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