LT1950
3
1950fa
ELECTRICAL CHARACTERISTICS
PARAMETER CONDITIONS MIN TYP MAX UNITS
The ● denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at T
A
= 25°C. COMP = open, FB = 1.4V, R
OSC
= 249k, SYNC = 0V, SLOPE = open, V
REF
= 0.1µF, SHDN = V
IN
, BLANK = 0V, I
SENSE
= 0V, V
IN2
= 15V, GATE = 1nF, BOOST = open, V
IN
= 15V, V
SEC
= 0V, unless otherwise
specified.
Error Amplifier
FB Reference Voltage 3V < V
IN
< 25V, V
OL
+ 0.2V < COMP < V
OH
– 0.2 ● 1.205 1.230 1.254 V
FB Input Bias Current FB = FB Reference Voltage –75 –200 nA
Open Loop Voltage Gain V
OL
+ 0.2V < COMP < V
OH
– 0.2 65 85 dB
Unity Gain Bandwidth (Note 6) 3 MHz
COMP Source Current FB = 1V, COMP = 1.6V ● –0.3 –1.1 –1.8 mA
COMP Sink Current FB = 1.4V, COMP = 1.6V 8 13 mA
COMP High Level: V
OH
FB = 1V, I
COMP
= – 250µA 2.5 V
COMP Active Threshold Start of GATE Switching (Duty Cycle > 0%) 1.0 V
COMP Low Level: V
OL
FB = 1.4V, I
COMP
= 250µA 0.15 V
Current Sense
I
SENSE
Maximum Threshold Duty Cycle < 10%, COMP = V
OH
90 100 110 mV
I
SENSE
Input Bias Current COMP = 2.5V, I
SENSE
= I
SENSE
Max Threshold –125 –170 –250 µA
Default Blanking Time FB = 1V, COMP = 2V, I
SENSE
= 75mV 110 ns
Adjustable Blanking Time FB = 1V, COMP = 2V, I
SENSE
= 75mV 290 ns
BLANK = 75k to Ground
Blanking Override Voltage– BLANK = Open, COMP = 2.5V (Note 4) 15 25 40 mV
I
SENSE
Maximum Threshold
Turn-Off Delay to Gate COMP = 2V 60 ns
Slope Compensation (Note 4) I
SENSE
Max Threshold (DC < 10%) – (DC = 80%) (Note 4)
Default, R
SLOPE
= ∞ 14 mV
2x Default, R
SLOPE
= 8k 28 mV
3x Default, R
SLOPE
= 3.3k 42 mV
Internal Switcher
Boost Switch I
LIMIT
V
IN2
= 8V, 3V < V
IN
< 10V 70 125 180 mA
Boost Switch Off Time V
IN2
= 8V, 3V < V
IN
< 10V 250 500 1000 ns
V
IN2
: Boost Disable 3V < V
IN
< 10V ● 9.5 11.0 11.75 V
V
IN2
: Boost Disable Hysteresis 3V < V
IN
< 10V –1.0 V
V
IN2
: Gate Enable 3V < V
IN
< 10V, FB = 1V (Note 4) ● 7.0 8.2 9.27 V
V
IN2
: Gate Enable Hysteresis 3V < V
IN
< 10V, FB = 1V (Note 4) –0.6 V
GATE Driver Output
GATE Rise Time FB = 1V, V
IN2
= 12V, C
L
= 1nF (Notes 3, 6) 50 ns
GATE Fall Time FB = 1V, V
IN2
= 12V, C
L
= 1nF (Notes 3, 6) 30 ns
GATE Clamp Voltage I
GATE
= 0µA, COMP = 2.5V, FB = 6V 11.5 13 14.5 V
GATE Low Level I
GATE
= 20mA 0.25 0.4 V
I
GATE
= 200mA 1.2 1.75 V
GATE High Level I
GATE
= –20mA, V
IN2
= 12V, COMP = 2.5V, FB = 6V 10 V
I
GATE
= –200mA, V
IN2
= 12V, COMP = 2.5V, FB = 6V 9.75 V
Maximum Duty Cycle FB = 1V, f
OSC
= 200kHz 90 95 97 %