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PTVS10-058C-SH

P1-P3P4-P6
ESD-Protection Diode in SOD-923
VESD05A1B-02Z
Vishay Semiconductors
Document Number: 81309 For technical questions, contact: ESDprotection@vishay.com
www.vishay.com
Rev. 1.8, 26-Oct-10 1
MARKING (example only)
Bar = cathode marking
X = date code
Y = type code (see table below)
FEATURES
• Single-line ESD-protection device
• ESD-immunity acc. IEC 61000-4-2
> 20 kV contact discharge
> 30 kV air discharge
• Tiny SOD-923 package
• Package height = 0.4 mm
• Typ. capacitance 12 pF
(V
R
= 2.5 V; f = 1 MHz)
• Leakage current < 0.1 μA (V
R
= 5 V)
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
20516
2
20278
1
2
20279
XY
ORDERING INFORMATION
DEVICE NAME ORDERING CODE
TAPED UNITS PER REEL
(8 mm TAPE on 7" REEL)
MINIMUM ORDER QUANTITY
VESD05A1B-02Z VESD05A1B-02Z-GS08 8000 8000
PACKAGE DATA
DEVICE NAME
PACKAGE
NAME
TYPE
CODE
WEIGHT
MOLDING COMPOUND
FLAMMABILITY RATING
MOISTURE
SENSITIVITY LEVEL
SOLDERING
CONDITIONS
VESD05A1B-02Z SOD-923 H 0.45 mg UL 94 V-0
MSL level 1
(according J-STD-020)
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Peak pulse current acc. IEC 61000-4-5; t
P
= 8/20 μs; single shot I
PPM
3A
Peak pulse power acc. IEC 61000-4-5; t
P
= 8/20 μs; single shot P
PP
33 W
ESD immunity
Contact discharge acc. IEC 61000-4-2; 10 pulses V
ESD
± 20 kV
Air discharge acc. IEC 61000-4-2; 10 pulses V
ESD
± 30 kV
Operating temperature Junction temperature T
J
- 40 to + 125 °C
Storage temperature T
stg
- 55 to + 150 °C
** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902
VESD05A1B-02Z
Vishay Semiconductors
ESD-Protection Diode in SOD-923
www.vishay.com For technical questions, contact: ESDprotection@vishay.com
Document Number: 81309
2 Rev. 1.8, 26-Oct-10
Note
• Ratings at 25 °C, ambient temperature unless otherwise specified
BIAS-MODE (BIDIRECTIONAL ASYMMETRICAL PROTECTION MODE)
With the VESD05A1B-02Z one signal- or data-lines (L1) can be protected against voltage transients. With pin 1 connected to
ground and pin 2 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or
signal-line is between 0 V (ground level) and the specified Maximum Reverse Working Voltage (V
RWM
) the protection diode
between data line and ground offers a high isolation to the ground line. The protection device behaves like an open switch.
As soon as any positive transient voltage signal exceeds the break through voltage level of the protection diode, the diode
becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The
Clamping Voltage (V
C
) is defined by the BReakthrough Voltage (V
BR
) level plus the voltage drop at the series impedance
(resistance and inductance) of the protection device.
Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction of
the protection diode. The low Forward Voltage (V
F
) clamps the negative transient close to the ground level.
Due to the different clamping levels in forward and reverse direction the VESD05A1B-02Z clamping behaviour is Bi
directional
and Asymmetrical (BiAs).
ELECTRICAL CHARACTERISTICS VESD05A1B-02Z BIAS mode (between pin 1 and pin 2)
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected N
lines
--1lines
Reverse stand off voltage at I
R
= 0.1 μA V
RWM
5--V
Reverse current at V
R
= 5 V I
R
- 0.01 0.1 μA
Reverse breakdown voltage at I
R
= 1 mA V
BR
66.87.5V
Reverse Clamping voltage
at I
PP
= 1 A V
C
-89.5V
at I
PP
= I
PPM
= 3 A V
C
-8.911V
Forward clamping voltage
at I
PP
= 0.2 A V
F
- 0.95 1.2 V
at I
PP
= 1 A V
F
-1.3- V
at I
PP
= I
PPM
= 3 A V
F
-1.9- V
Capacitance
at V
R
= 0 V; f = 1 MHz C
D
-1923pF
at V
R
= 2.5 V; f = 1 MHz C
D
-12-pF
L1
20280
1
2
Ground
BiAs
VESD05A1B-02Z
ESD-Protection Diode in SOD-923
Vishay Semiconductors
Document Number: 81309 For technical questions, contact: ESDprotection@vishay.com
www.vishay.com
Rev. 1.8, 26-Oct-10 3
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - ESD Discharge Current Wave Form
acc. IEC 61000-4-2 (330 Ω/150 pF)
Fig. 2 - 8/20 μs Peak Pulse Current Wave Form
acc. IEC 61000-4-5
Fig. 3 - Typical Capacitance C
D
vs. Reverse Voltage V
R
Fig. 4 - Typical Forward Current I
F
vs. Forward Voltage V
F
Fig. 5 - Typical Reverse Voltage V
R
vs.
Reverse Current I
R
Fig. 6 - Typical Clamping Voltage vs.
Peak Pulse Current I
PP
0 %
20 %
40 %
60 %
80 %
100 %
120 %
- 10 0 10 20 30 40 50 60 70 80 90 100
Time (ns)
Discharge Current I
ESD
Rise time = 0.7 ns to 1 ns
53 %
27 %
20557
0 %
20 %
40 %
60 %
80 %
100 %
010203040
Time (µs)
I
PPM
20 µs to 50 %
8 µs to 100 %
20548
19940
V
R
(V)
04321
5
25
20
15
10
0
C
D
(pF)
5
f = 1 MHz
19941
V
F
(V)
0.5 10.80.70.6
0.01
100
10
1
0.1
0.001
I
F
(mA)
0.9
19942
I
R
(µA)
0.01 1001010.1
1
5
4
3
2
0
V
R
(V)
10 000
1000
7
6
8
- 2
0
2
4
6
8
10
12
012345
Reverse
Forward
- 4
20301
I
PP
(A)
V
F
/V
C
(V)
Measured acc. IEC 61000-4-5
(8/20 µs - wave form)
P1-P3P4-P6

PTVS10-058C-SH

Mfr. #:
Buy PTVS10-058C-SH
Manufacturer:
Bourns
Description:
TVS Diodes / ESD Suppressors 10kA 58V BI Surface Mt High Temp
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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