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IRF9520SPBF

P1-P3P4-P6P7-P9
www.vishay.com Document Number: 91075
4 S11-1050-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9520S, SiHF9520S
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
Q
G
, Total Gate Charge (nC)
- V
GS
, Gate-to-Source Voltage (V)
20
16
12
8
0
4
0
4
20
16
128
V
DS
= - 20 V
V
DS
= - 50 V
For test circuit
see figure 13
V
DS
= - 80 V
91075_06
I
D
= - 6.8 A
10
1
10
0
- V
SD
, Source-to-Drain Voltage (V)
- I
SD
, Reverse Drain Current (A)
1.0
5.0
4.03.02.0
25
°
C
175
°
C
V
GS
= 0 V
91075_07
10
-1
100 µs
1 ms
10 ms
Operation in this area limited
by R
DS(on)
- V
DS
, Drain-to-Source Voltage (V)
- I
D
, Drain Current (A)
T
C
= 25 °C
T
J
= 175 °C
Single Pulse
10
2
2
5
1
2
5
10
2
5
25
110
25
10
2
25
10
3
91075_08
10
3
Document Number: 91075 www.vishay.com
S11-1050-Rev. C, 30-May-11 5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9520S, SiHF9520S
Vishay Siliconix
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
150
- I
D
, Drain Current (A)
T
C
, Case Temperature (°C)
0.0
3.0
4.0
5.0
6.0
7.0
25
91075_09
1251007550
1.0
2.0
175
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
R
D
V
GS
R
g
D.U.T.
- 10 V
+
-
V
DS
V
DD
V
GS
10 %
90 %
V
DS
t
d(on)
t
r
t
d(off)
t
f
10
1
0.1
10
-2
10
-5
10
-4
10
-3
10
-2
0.1
110
P
DM
t
1
t
2
t
1
, Rectangular Pulse Duration (s)
Thermal Response (Z
thJC
)
Notes:
1. Duty Factor, D = t
1
/t
2
2. Peak T
j
= P
DM
x Z
thJC
+ T
C
Single Pulse
(Thermal Response)
0.2
0.05
0.02
0.01
91075_11
0.1
D = 0.5
www.vishay.com Document Number: 91075
6 S11-1050-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9520S, SiHF9520S
Vishay Siliconix
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit
R
G
I
AS
0.01 Ω
t
p
D.U.T.
L
V
DS
+
-
V
DD
- 10 V
Vary t
p
to obtain
required I
AS
I
AS
V
DS
V
DD
V
DS
t
p
25 15012510075
50
1000
0
200
400
600
800
Starting T
J
, Junction Temperature (°C)
E
AS
, Single Pulse Energy (mJ)
Bottom
To p
I
D
- 2.8 A
- 4.8 A
- 6.8 A
V
DD
= - 25 V
91075_12c
175
Q
GS
Q
GD
Q
G
V
G
Charge
- 10 V
D.U.T.
- 3 mA
V
GS
V
DS
I
G
I
D
0.3 µF
0.2 µF
50 kΩ
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-
P1-P3P4-P6P7-P9

IRF9520SPBF

Mfr. #:
Buy IRF9520SPBF
Manufacturer:
Vishay
Description:
Darlington Transistors MOSFET P-Chan 100V 6.8 Amp
Lifecycle:
New from this manufacturer.
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