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MS2472
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
DESCRIPTION:DESCRIPTION:
The MS2472 is a hermetically sealed, gold metallized, silicon
NPN power transistor. The MS2472 is designed for applications
requiring high peak power and low duty cycles such as IFF and DME.
The MS2472 is internal input/output matched resulting in improved
broadband performance and a low thermal resistance.
ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)
Symbol Parameter Value Unit
V
CBO
Collector-Base Voltage 65 V
V
CES
Collector-Emitter Voltage 65 V
V
EBO
Emitter-Base Voltage 3.5 V
I
C
Device Current 40 A
P
DISS
Power Dissipation 1350 W
T
J
Junction Temperature
200
ºC
T
STG
Storage Temperature
-65 to +150
ºC
Thermal DataThermal Data
R
TH(J-C)
Thermal Resistance Junction-case 0.06
°°C/W
FeaturesFeatures
• DESIGNED FOR HIGH POWER PULSED IFF AND DME
APPLICATIONS
• 600 W (typ.) IFF 1030 – 1090 MHz
• 550 W (min.) DME 1025 – 1150 MHz
• 1025 - 1150 MHz
• P
OUT
= 550 WATTS
• G
P
= 5.6 dB MINIMUM
• GOLD METALLIZATION
• INTERNAL INPUT/OUTPUT MATCHED
• COMMON BASE CONFIGURATION
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
