MRF559G

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MRF559
MRF559G
Rev A 9/2005
* G Denotes RoHS Complaint, Pb Free Terminal Finish
DESCRIPTION: Designed primarily for wideband large signal stages in the UHF frequency range.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Value Unit
V
CEO
Collector-Emitter Voltage 16 Vdc
V
CBO
Collector-Base Voltage 30 Vdc
V
EBO
Emitter-Base Voltage 3.0 Vdc
I
C
Collector Current 150 mA
Thermal Data
P
D
Total Device Dissipation @ TC = 75ºC
Derate above 75ºC
2.0
20
Watts
mW/ ºC
Tstg
Storage Temperature Range
-65 to +150
ºC
Macro X
Features
Specified @ 12.5 V, 870 MHz Characteristics
Output Power = .5 W
Minimum Gain = 8.0 dB
Efficiency 50%
Cost Effective Macro X Package
Electroless Tin Plated Leads for Improved Solderability
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MRF559
MRF559G
Rev A 9/2005
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol Test Conditions Value
Min. Typ. Max. Unit
BVCEO Collector-Emitter Breakdown Voltage
(IC = 5.0 mAdc, IB = 0) 16 - - Vdc
BVCBO Collector-Base Breakdown Voltage
(IC = 0.1 mAdc, IB = 0) 30 - - Vdc
BVEBO Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0) 3.0 - - Vdc
ICES Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0 Vdc) - - 1.0 mA
(on)
HFE DC Current Gain
(IC = 50 mAdc, VCE = 10 Vdc)
30 - 200
-
DYNAMIC
Symbol Test Conditions Value
Min. Typ. Max. Unit
COB Output Capacitance
(VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz)
-
2.5
3.0 pF
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MRF559
MRF559G
Rev A 9/2005
FUNCTIONAL
Symbol Test Conditions Value
Min. Typ. Max. Unit
G
PE
Power Gain Test Circuit-Figure 1
Pout = 0.5 W, VCE =12.5Vdc f = 870
MHz
f = 512
MHz
8.0
-
9.5
13
- dB
η
Collector Efficiency Test Circuit-Figure 1
Pout = 0.5 W, VCE =12.5Vdc f = 870
MHz
f = 512
MHz
50
-
65
60
- %
Typical Performance @ VCC = 7.5V
G
PE
Power Gain Test Circuit-Figure 1
Pout = 0.5 W, VCE =7.5Vdc f = 870 MHz
f = 512
MHz
-
-
6.5
10
-
-
dB
η
Collector Efficiency Test Circuit-Figure 1
Pout = 0.5 W, VCE =7.5Vdc f = 870 MHz
f = 512
MHz
-
-
70
65
-
-
%
Figure 2. 870 MHz Test Fixture
C1, C2, C4, C5 — 1.0–10 pF Johanson C3, C6 — 0.001 µF Chip Capacitor
C7 — 1.0 µF Tantalum L1, L4 — 4 Turns #26 AWG, 0.3 cm ID, 0.4 cm Long
L2, L3 Ferrite Bead Z1 — 50 1.5 cm
Z2 — 30 2.5 cm Z3 — 50 2.0 cm
Z4 — 50 1.2 cm Z5, Z6 — 50 1.25 cm
Microstrip Elements ε r = 2.55

MRF559G

Mfr. #:
Manufacturer:
Microchip / Microsemi
Description:
RF Bipolar Transistors Comm/Bipolar Transistor
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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