Vishay Siliconix
Si7411DN
Document Number: 72399
S-83051-Rev. E, 29-Dec-08
www.vishay.com
1
P-Channel 20-V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET
®
Power MOSFET: 1.8 V Rated
•New PowerPAK
®
Package
- Low Thermal Resistance, R
thJC
- Low 1.07 mm Profile
APPLICATIONS
• Load Switch
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A)
- 20
0.019 at V
GS
= - 4.5 V
- 11.4
0.025 at V
GS
= - 2.5 V
- 9.9
0.034 at V
GS
= - 1.8 V
- 8.5
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
3.30 mm
3.30 mm
PowerPAK 1212-8
Bottom View
Ordering Information: Si7411DN-T1-E3 (Lead (Pb)-free)
Si7411DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
G
D
P-Channel MOSFET
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (www.vishay.com/ppg?73257
). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol 10 s Steady State Unit
Drain-Source Voltage
V
DS
- 20
V
Gate-Source Voltage
V
GS
± 8
Continuous Drain Current (T
J
= 150 °C)
a
T
A
= 25 °C
I
D
- 11.4 - 7.5
A
T
A
= 85 °C
- 8.2 - 5.4
Pulsed Drain Current
I
DM
- 30
Continuous Source Current (Diode Conduction)
a
I
S
- 3 - 1.3
Maximum Power Dissipation
a
T
A
= 25 °C
P
D
3.6 1.5
W
T
A
= 85 °C
1.9 0.8
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)
b, c
260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a
t ≤ 10 s
R
thJA
28 35
°C/W
Steady State 65 81
Maximum Junction-to-Case Steady State
R
thJC
2.9 3.8