RN2312,RN2313
2014-03-01
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
RN2312, RN2313
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
z With built-in bias resistors
z Simplify circuit design
z Reduce a quantity of parts and manufacturing process
z Complementary to RN1312, RN1313
Equivalent Circuit
Absolute Maximum Ratings
(Ta = 25
°
C)
Characterisstic Symbol Rating Unit
Collector-base voltage V
CBO
−50 V
Collector-emitter voltage V
CEO
−50 V
Emitter-base voltage V
EBO
−5 V
Collector current I
C
−100 mA
Collector power dissipation P
C
100 mW
Junction temperature T
j
150 °C
Storage temperature range T
stg
−55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta = 25
°
C)
Characteristic Symbol
Test
Circuit
Test Condition Min Typ. Max Unit
Collector cut-off current I
CBO
― V
CB
= −50V, I
E
=0 ― ― −100 nA
Emitter cut-off current I
EBO
― V
EB
= −5V, I
C
= 0 ― ― −100 nA
DC current gain h
FE
― V
CE
= −5V, I
C
= −1mA 120 ― 400 ―
Collector-emitter saturation voltage V
CE (sat)
― I
C
= −5mA, I
B
= −0.25mA ― −0.1 −0.3 V
Translation Frequency f
T
― V
CE
= −10V, I
C
= −5mA ― 200 ― MHz
Collector output capacitance C
ob
― V
CB
= −10V, I
E
= 0, f = 1MHz ― 3 6 pF
RN2312 15.4 22 28.6
Input resistor
RN2313
R1 ―
―
32.9 47 61.1
kΩ
Unit: mm
JEDEC ―
JEITA SC-70
TOSHIBA 2-2E1A
Weight: 0.006 g (typ.)
Start of commercial production
1998-02
