2016-01-04 2
Version 1.3 BPW 21
Maximum Ratings (T
A
= 25 °C)
Characteristics (T
A
= 25 °C)
Parameter Symbol Values Unit
Operating and storage temperature range T
op
; T
stg
-40 ... 80 °C
Reverse voltage V
R
10 V
Total Power dissipation P
tot
250 mW
Parameter Symbol Values Unit
Spectral sensitivity
(V
R
= 5 V, standard light/Normlicht A, T = 2856 K)
(typ) S 10 (≥ 5.5) nA/Ix
Wavelength of max. sensitivity (typ) λ
S max
550 nm
Spectral range of sensitivity (typ) λ
10%
(typ) 350
... 820
nm
Radiant sensitive area (typ) A 7.45 mm
2
Dimensions of radiant sensitive area (typ) L x W 2.73 x 2.73 mm x
mm
Half angle (typ) ϕ ± 55 °
Dark current
(V
R
= 5 V)
(typ (max)) I
R
2 (≤ 30) nA
Dark current
(V
R
= 10 mV)
(typ (max)) I
R
8 (≤ 200) pA
Spectral sensitivity of the chip
(λ = 550 nm)
(typ) S
λ typ
0.34 A / W
Quantum yield of the chip
(λ = 550 nm)
(typ) η 0.77 Electro
ns
/Photon
Open-circuit voltage
(E
v
= 1000 lx, Std. Light A)
(typ (min)) V
O
400 (≥ 320) mV
Short-circuit current
(E
v
= 1000 lx, Std. Light A)
(typ) I
SC
10 µA
Rise and fall time
(R
L
= 1 kΩ, V
R
= 5 V, λ = 550 nm)
(typ) t
r
, t
f
1.5 µs
Forward voltage
(I
F
= 100mA, E = 0)
(typ) V
F
1.2 V
Capacitance
(V
R
= 0 V, f = 1 MHz, E = 0)
(typ) C
0
580 pF
Temperature coefficient of V
O
(typ) TC
V
-2.6 mV / K
