NXP Semiconductors
PMEG2005BELD
20 V, 0.5 A low VF MEGA Schottky barrier rectifier
PMEG2005BELD All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 4 August 2015 6 / 14
Symbol Parameter Conditions Min Typ Max Unit
I
F
= 100 mA; pulsed; t
p
≤ 300 µs;
δ ≤ 0.02 ; T
j
= 25 °C
- 266 310 mV
I
F
= 500 mA; pulsed; t
p
≤ 300 µs;
δ ≤ 0.02 ; T
j
= 25 °C
- 353 390 mV
V
R
= 10 V; T
j
= 25 °C - 28 50 µAI
R
reverse current
V
R
= 20 V; T
j
= 25 °C - 87 200 µA
C
d
diode capacitance V
R
= 1 V; f = 1 MHz; T
j
= 25 °C - 31 40 pF
t
rr
reverse recovery time I
F
= 0.5 A; I
R
= 0.5 A; I
R(meas)
= 0.1 A;
T
j
= 25 °C
- 1.6 - ns
V
FRM
peak forward recovery
voltage
I
F
= 0.5 A; dI
F
/dt = 20 A/µs; T
j
= 25 °C - 565 - mV
006aac931
10
-3
10
-2
10
-1
1
I
F
(A)
10
-4
V
F
(V)
0.0 0.50.40.2 0.30.1
(1)
(2)
(3) (4) (5)
(1) T
j
= 150 °C
(2) T
j
= 125 °C
(3) T
j
= 85 °C
(4) T
j
= 25 °C
(5) T
j
= −40 °C
Fig. 5. Forward current as a function of forward
voltage; typical values
006aac932
10
-1
10
-2
10
-3
10
-4
10
-5
10
-6
10
-7
I
R
(A)
10
-8
V
R
(V)
0 20155 10
(1)
(2)
(3)
(4)
(1) T
j
= 125 °C
(2) T
j
= 85 °C
(3) T
j
= 25 °C
(4) T
j
= −40 °C
Fig. 6. Reverse current as a function of reverse
voltage; typical values
NXP Semiconductors
PMEG2005BELD
20 V, 0.5 A low VF MEGA Schottky barrier rectifier
PMEG2005BELD All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 4 August 2015 7 / 14
V
R
(V)
0 20155 10
006aac933
40
50
30
20
10
60
70
C
d
(pF)
0
f = 1 MHz; T
amb
= 25 °C
Fig. 7. Diode capacitance as a function of reverse
voltage; typical values
006aac934
I
F(AV)
(A)
0.00 0.750.500.25
0.10
0.15
0.05
0.20
0.25
P
F(AV)
(W)
0.00
(1)
(2)
(3)
(4)
T
j
= 150 °C
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
(4) δ = 1
Fig. 8. Average forward power dissipation as a
function of average forward current; typical
values
V
R
(V)
0 20155 10
006aac935
0.4
0.8
1.2
P
R(AV)
(W)
0.0
(1)
(2)
(3)
(4)
T
j
= 125 °C
(1) δ = 1 (DC)
(2) δ = 0.9; f = 20 kHz
(3) δ = 0.8; f = 20 kHz
(4) δ = 0.5; f = 20 kHz
Fig. 9. Average reverse power dissipation as a
function of reverse voltage; typical values
T
amb
(°C)
0 50 100 150 1751257525
006aac936
0.25
0.50
0.75
I
F(AV)
(A)
0.00
(1)
(2)
(3)
(4)
FR4 PCB, standard footprint
T
j
= 150 °C
(1) δ = 1
(2) δ = 0.5
(3) δ = 0.2
(4) δ = 0.1
Fig. 10. Average forward current as a function of
ambient temperature; typical values
NXP Semiconductors
PMEG2005BELD
20 V, 0.5 A low VF MEGA Schottky barrier rectifier
PMEG2005BELD All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 4 August 2015 8 / 14
T
amb
(°C)
0 50 100 150 1751257525
006aac937
0.25
0.50
0.75
I
F(AV)
(A)
0.00
(1)
(2)
(3)
(4)
FR4 PCB, mounting pad for cathode 1 cm
2
T
j
= 150 °C
(1) δ = 1
(2) δ = 0.5
(3) δ = 0.2
(4) δ = 0.1
Fig. 11. Average forward current as a function of
ambient temperature; typical values
T
amb
(°C)
0 50 100 150 1751257525
006aac938
0.25
0.50
0.75
I
F(AV)
(A)
0.00
(1)
(2)
(3)
(4)
Ceramic PCB, Al
2
O
3
, standard footprint
T
j
= 150 °C
(1) δ = 1
(2) δ = 0.5
(3) δ = 0.2
(4) δ = 0.1
Fig. 12. Average forward current as a function of
ambient temperature; typical values
T
sp
(°C)
0 50 100 150 1751257525
006aac939
0.25
0.50
0.75
I
F(AV)
(A)
0.00
(1)
(2)
(3)
(4)
T
j
= 150 °C
(1) δ = 1
(2) δ = 0.5
(3) δ = 0.2
(4) δ = 0.1
Fig. 13. Average forward current as a function of solder point temperature; typical values

CSFMT105-HF

Mfr. #:
Manufacturer:
Description:
Rectifier Diode, 1 Element, 1A, 300V V(RRM)
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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