NXP Semiconductors
PMEG2005BELD
20 V, 0.5 A low VF MEGA Schottky barrier rectifier
PMEG2005BELD All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 4 August 2015 7 / 14
V
R
(V)
0 20155 10
006aac933
40
50
30
20
10
60
70
C
d
(pF)
0
f = 1 MHz; T
amb
= 25 °C
Fig. 7. Diode capacitance as a function of reverse
voltage; typical values
006aac934
I
F(AV)
(A)
0.00 0.750.500.25
0.10
0.15
0.05
0.20
0.25
P
F(AV)
(W)
0.00
(1)
(2)
(3)
(4)
T
j
= 150 °C
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
(4) δ = 1
Fig. 8. Average forward power dissipation as a
function of average forward current; typical
values
V
R
(V)
0 20155 10
006aac935
0.4
0.8
1.2
P
R(AV)
(W)
0.0
(1)
(2)
(3)
(4)
T
j
= 125 °C
(1) δ = 1 (DC)
(2) δ = 0.9; f = 20 kHz
(3) δ = 0.8; f = 20 kHz
(4) δ = 0.5; f = 20 kHz
Fig. 9. Average reverse power dissipation as a
function of reverse voltage; typical values
T
amb
(°C)
0 50 100 150 1751257525
006aac936
0.25
0.50
0.75
I
F(AV)
(A)
0.00
(1)
(2)
(3)
(4)
FR4 PCB, standard footprint
T
j
= 150 °C
(1) δ = 1
(2) δ = 0.5
(3) δ = 0.2
(4) δ = 0.1
Fig. 10. Average forward current as a function of
ambient temperature; typical values