TK15A60D
2013-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK15A60D
Switching Regulator Applications
• Low drain-source ON-resistance: R
DS (ON)
= 0.31 Ω (typ.)
• High forward transfer admittance: |Y
fs
| = 8.5 S (typ.)
• Low leakage current: I
DSS
= 10 μA (max) (V
DS
= 600 V)
• Enhancement mode: V
th
= 2.0 to 4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage V
DSS
600 V
Gate-source voltage V
GSS
±30 V
DC (Note 1) I
D
15
Drain current
Pulse (Note 1) I
DP
60
A
Drain power dissipation (Tc = 25°C)
P
D
50 W
Single pulse avalanche energy
(Note 2)
E
AS
527 mJ
Avalanche current I
AR
15 A
Repetitive avalanche energy (Note 3) E
AR
5.0 mJ
Channel temperature T
ch
150 °C
Storage temperature range T
stg
−55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
DD
= 90 V, T
ch
= 25°C(initial), L = 4.1 mH, R
G
= 25 Ω, I
AR
= 15 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
Ф3.2
0.2
10 ± 0.3
2.7 ± 0.
A
1.14 ± 0.15
0.69 ± 0.15
2.54
3.0
3.9
15.0 ± 0.3 13 ± 0.5
2.8 MAX.
2.54
4.5 ± 0.2
1 2 3
0.64 ± 0.15
2.6 ± 0.1
M
Ф0.2
A
1: Gate
2: Drain
3: Source
JEDEC ⎯
JEITA SC-67
TOSHIBA 2-10U1B
Weight: 1.7 g (typ.)
Characteristics Symbol Max Unit
Thermal resistance, channel to case R
th (ch-c)
2.5 °C/W
Thermal resistance, channel to ambient R
th (ch-a)
62.5 °C/W
1
3
2
Start of commercial production
2009-01