IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFP90N20X3M
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537
Terminals: 1 - Gate
2 - Drain
3 - Source
123
OVERMOLDED TO-220
(IXFP...M)
Note 1. Pulse test, t 300s, duty cycle, d 2%.
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max
I
S
V
GS
= 0V 90 A
I
SM
Repetitive, pulse Width Limited by T
JM
360 A
V
SD
I
F
= I
S
, V
GS
= 0V, Note 1 1.4 V
t
rr
95 ns
Q
RM
360 nC
I
RM
7.6 A
I
F
= 45A, -di/dt = 100A/μs
V
R
= 100V
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max
g
fs
V
DS
= 10V, I
D
= 45A, Note 1 40 67 S
R
Gi
Gate Input Resistance 1.4
C
iss
5420 pF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 930 pF
C
rss
4 pF
C
o(er)
420 pF
C
o(tr)
1300 pF
t
d(on)
22 ns
t
r
26 ns
t
d(off)
62 ns
t
f
13 ns
Q
g(on)
78 nC
Q
gs
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 45A 23 nC
Q
gd
22 nC
R
thJC
3.5 C/W
R
thCS
0.50 C/W
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 45A
R
G
= 5 (External)
Effective Output Capacitance
Energy related
Time related
V
GS
= 0V
V
DS
= 0.8 • V
DSS
