ZUMTS17N
Document number: DS32159 Rev. 2 - 2
4 of 7
www.diodes.com
October 2012
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ZUMTS17N
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Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
BV
CBO
20
⎯ ⎯
V
I
C
= 10μA
Collector-Emitter Breakdown Voltage (Note 9)
BV
CEO
11
⎯ ⎯
V
I
C
= 1mA
Emitter-Base Breakdown Voltage
BV
EBO
3
⎯ ⎯
V
I
E
= 10μA
Collector Cutoff Current
I
CBO
⎯ ⎯
0.5
μA
V
CE
= 10V
Emitter Cutoff Current
I
EBO
⎯ ⎯
0.5
μA
V
EB
= 2V
Static Forward Current Transfer Ratio (Note 9)
h
FE
56
⎯
180
⎯
I
C
= 5mA, V
CE
= 10V
Collector-Emitter Saturation Voltage (Note 9)
V
CE
SAT
⎯ ⎯
0.5 V
I
C
= 10mA, I
B
= 5mA
Transition Frequency (Note 9)
f
T
1.4 3.2
⎯
GHz
V
CE
= 5V, I
E
= 25mA,
f = 500MHz
Collector Output Capacitance (Note 9)
C
ob
⎯
0.8 1.5 pF
V
CB
= 10V, f = 1.0MHz
Notes: 9. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%