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ADR435TRZ-EP-R7

P1-P3P4-P6P7-P8
Low Noise XFET Voltage References with
Current Sink and Source Capability
ADR431-EP/ADR434-EP/ADR435-EP
Rev. A
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700 www.analog.com
Fax: 781.461.3113 ©2010 Analog Devices, Inc. All rights reserved.
FEATURES
Low noise (0.1 Hz to 10.0 Hz): 3.5 μV p-p @ 2.5 V
OUT
(ADR431-EP)
No external capacitor required
Low temperature coefficient
T Grade: 3 ppm/°C maximum (ADR434-EP/ADR435-EP)
T Grade: 5 ppm/°C maximum (ADR431-EP)
Load regulation: 15 ppm/mA
Line regulation: 20 ppm/V
Wide operating range: 4.5 V to 18 V (ADR431-EP)
High output source and sink current: +10 mA and −10 mA
ENHANCED PRODUCT FEATURES
Supports defense and aerospace applications (AQEC
standard)
Military temperature range (−55°C to +125°C)
Controlled manufacturing baseline
One assembly/test site
One fabrication site
Enhanced product change notification
Qualification data available on request
APPLICATIONS
Precision data acquisition systems
High resolution data converters
Optical control circuits
Precision instruments
PIN CONFIGURATION
09218-001
TP
1
V
IN
2
NC
3
GND
NOTES
1. NC = NO CONNECT.
2. TP = TEST PIN (DO NOT CONNECT).
4
TP
8
COMP
7
V
OUT
6
TRIM
5
TOP VIEW
(Not to Scale)
ADR431-EP/
ADR434-EP/
ADR435-EP
Figure 1. 8-Lead SOIC_N (R-8)
GENERAL DESCRIPTION
The ADR431-EP/ADR434-EP/ADR435-EP are XFET® voltage
references featuring low noise, high accuracy, and low temperature
drift performance. Using Analog Devices, Inc., patented temperature
drift curvature correction and XFET (eXtra implanted junction
FET) technology, voltage change vs. temperature nonlinearity in
the ADR431-EP/ADR434-EP/ADR435-EP is minimized.
The XFET references operate at lower current (800 μA) and
lower supply voltage headroom (2 V) than buried Zener
references. Buried Zener references require more than 5 V
headroom for operation. The ADR431-EP/ADR434-EP/
ADR435-EP XFET references are optimal low noise solutions
for 5 V systems.
The ADR431-EP/ADR434-EP/ADR435-EP have the capability
to source up to 10 mA of output current and sink up to −10 mA.
They also come with a trim terminal to adjust the output
voltage over a 0.5% range without compromising performance.
The ADR431-EP/ADR434-EP/ADR435-EP are available in an
8-lead narrow SOIC package and are specified over the military
temperature range of −55°C to +125°C.
Additional application and technical information can be found
in the ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
data sheet.
Table 1. Selection Guide
Model
Output
Voltage (V)
Accuracy
(mV)
Temperature
Coefficient (ppm/°C)
ADR431T-EP 2.500 ±1.0 5
ADR434T-EP 4.096 ±1.5 3
ADR435T-EP 5.000 ±2.0 3
ADR431-EP/ADR434-EP/ADR435-EP
Rev. A | Page 2 of 8
TABLE OF CONTENTS
Features .............................................................................................. 1
Enhanced Product Features ............................................................ 1
Applications ....................................................................................... 1
Pin Configuration ............................................................................. 1
General Description ......................................................................... 1
Revision History ............................................................................... 2
Specifications ..................................................................................... 3
ADR431-EP Electrical Characteristics ...................................... 3
ADR434-EP Electrical Characteristics ...................................... 4
ADR435-EP Electrical Characteristics .......................................5
Absolute Maximum Ratings ............................................................6
Thermal Resistance .......................................................................6
ESD Caution...................................................................................6
Typical Performance Characteristics ..............................................7
Outline Dimensions ..........................................................................8
Ordering Guide .............................................................................8
REVISION HISTORY
8/10—Rev. 0 to Rev. A
Added ADR431-EP ....................................................... Throughout
Added ADR435-EP ....................................................... Throughout
Changes to Ordering Guide ............................................................ 8
7/10—Revision 0: Initial Version
ADR431-EP/ADR434-EP/ADR435-EP
Rev. A | Page 3 of 8
SPECIFICATIONS
ADR431-EP ELECTRICAL CHARACTERISTICS
V
IN
= 4.5 V to 18 V, I
L
= 0 mA, T
A
= 25°C, unless otherwise noted.
Table 2.
Parameter Symbol Test Conditions/Comments Min Typ Max Unit
OUTPUT VOLTAGE V
O
T Grade 2.499 2.500 2.501 V
INITIAL ACCURACY V
OERR
T Grade ±1.0 mV
±0.04 %
TEMPERATURE COEFFICIENT TCV
O
T Grade −55°C < T
A
< +125°C 1.5 5 ppm/°C
LINE REGULATION ΔV
O
/ΔV
IN
V
IN
= 4.5 V to 18 V, −55°C < T
A
< +125°C 5 20 ppm/V
LOAD REGULATION ΔV
O
/ΔI
L
I
L
= 0 mA to 10 mA, V
IN
= 5 V, −55°C < T
A
< +125°C 15 ppm/mA
ΔV
O
/ΔI
L
I
L
= −10 mA to 0 mA, V
IN
= 5 V, −55°C < T
A
< +125°C 15 ppm/mA
QUIESCENT CURRENT I
IN
No load, −55°C < T
A
< +125°C 580 800 μA
VOLTAGE NOISE e
N
p-p 0.1 Hz to 10.0 Hz 3.5 μV p-p
VOLTAGE NOISE DENSITY e
N
1 kHz 80 nV/√Hz
TURN-ON SETTLING TIME t
R
C
L
= 0 μF 10 μs
LONG-TERM STABILITY
1
∆V
O
1000 hours 40 ppm
OUTPUT VOLTAGE HYSTERESIS V
O_HYS
20 ppm
RIPPLE REJECTION RATIO RRR f
IN
= 1 kHz −70 dB
SHORT CIRCUIT TO GND I
SC
40 mA
SUPPLY VOLTAGE OPERATING RANGE V
IN
4.5 18 V
SUPPLY VOLTAGE HEADROOM V
IN
− V
O
2 V
1
The long-term stability specification is noncumulative. The drift in subsequent 1000 hour periods is significantly lower than in the first 1000 hour period.
P1-P3P4-P6P7-P8

ADR435TRZ-EP-R7

Mfr. #:
Buy ADR435TRZ-EP-R7
Manufacturer:
Analog Devices Inc.
Description:
Voltage References EP 5.0V w/Crnt Sink & Srce Capability
Lifecycle:
New from this manufacturer.
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