SI4965DY-T1-E3 Datasheet SI4965DY-T1-E3, SI4965DY-T1-GE3 | P1-P3

Vishay Siliconix

Si4965DY

Document Number: 70826

S09-0867-Rev. C, 18-May-09

www.vishay.com

1

Dual P-Channel 1.8-V (G-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET

®

Power MOSFETs: 1.8 V Rated

• Compliant to RoHS Directive 2002/95/EC

Notes:

a. Surface Mounted on FR4 board.

b. t ≤ 10 s.

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

(Ω)I

D

(A)

- 8

0.021 at V

GS

= - 4.5 V

- 8.0

0.027 at V

GS

= - 2.5 V

- 7.0

0.040 at V

GS

= - 1.8 V

- 5.8

S

1

D

1

G

1

D

1

S

2

D

2

G

2

D

2

SO-8

5

6

7

8

Top View

2

3

4

1

Ordering Information: Si4965DY-T1-E3 (Lead (Pb)-free)

Si4965DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

S

1

G

1

D

1

P-Channel MOSFET

S

2

G

2

D

2

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T

A

= 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage

V

DS

- 8

V

Gate-Source Voltage

V

GS

± 8

Continuous Drain Current (T

J

= 150 °C)

a, b

T

A

= 25 °C

I

D

- 8.0

A

T

A

= 70 °C

- 6.4

Pulsed Drain Current

I

DM

- 30

Continuous Source Current (Diode Conduction)

a, b

I

S

- 1.7

Maximum Power Dissipation

a, b

T

A

= 25 °C

P

D

2.0

W

T

A

= 70 °C

1.3

Operating Junction and Storage Temperature Range

T

J

, T

stg

- 55 to 150 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a

t ≤ 10 s

R

thJA

62.5

°C/W

Steady State 93

www.vishay.com

2

Document Number: 70826

S09-0867-Rev. C, 18-May-09

Vishay Siliconix

Si4965DY

Notes:

a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS T

J

= 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Gate Threshold Voltage

V

GS(th)

V

DS

= V

GS

, I

D

= - 250 µA

- 0.45 V

Gate-Body Leakage

I

GSS

V

DS

= 0 V, V

GS

= ± 8 V

± 100 nA

Zero Gate Voltage Drain Current

I

DSS

V

DS

= - 8 V, V

GS

= 0 V

- 1

µA

V

DS

= - 8 V, V

GS

= 0 V, T

J

= 70 °C

- 5

On-State Drain Current

a

I

D(on)

V

DS

≥ - 5 V, V

GS

= - 4.5 V

- 20 A

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

= - 4.5 V, I

D

= - 8.0 A

0.0175 0.021

Ω

V

GS

= - 2.5 V, I

D

= - 7.0 A

0.022 0.027

V

GS

= - 1.8 V, I

D

= - 5.8 A

0.031 0.040

Forward Transconductance

a

g

fs

V

DS

= - 5 V, I

D

= - 8.0 A

27 S

Diode Forward Voltage

a

V

SD

I

S

= - 1.7 A, V

GS

= 0 V

- 1.2 V

Dynamic

b

Total Gate Charge

Q

g

V

DS

= - 4 V, V

GS

= - 4.5 V, I

D

= - 8.0 A

36 55

nCGate-Source Charge

Q

gs

7.5

Gate-Drain Charge

Q

gd

5.0

Tur n - O n D e l ay Time

t

d(on)

V

DD

= - 4 V, R

L

= 4 Ω

I

D

≅ - 1 A, V

GEN

= - 4.5 V, R

g

= 6 Ω

35 70

ns

Rise Time

t

r

45 90

Turn-Off Delay Time

t

d(off)

170 340

Fall Time

t

f

90 180

Source-Drain Reverse Recovery Time

t

rr

I

F

= - 1.7 A, dI/dt = 100 A/µs

60 90

Document Number: 70826

S09-0867-Rev. C, 18-May-09

www.vishay.com

3

Vishay Siliconix

Si4965DY

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

6

12

18

24

30

0.0 0.5 1.0 1.5 2.0 2.5 3.0

V

GS

= 5 V thru 2.5 V

1 V

1.5 V

V

DS

- Drain-to-Source Voltage (V)

- Drain Current (A)I

D

2 V

0.00

0.02

0.04

0.06

0.08

0 6 12 18 24 30

V

GS

= 4.5 V

V

GS

= 2.5 V

-R

DS(on)

I

D

- Drain Current (A)

V

GS

= 1.8 V

0

1

2

3

4

5

0 8 16 24 32 40

V

DS

= 4 V

I

D

= 8.0 A

- Gate-to-Source Voltage (V)

Q

g

- Total Gate Charge (nC)

V

GS

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

6

12

18

24

30

0.0 0.5 1.0 1.5 2.0 2.5

25 °C

T

C

= - 55 °C

125 °C

V

GS

- Gate-to-Source Voltage (V)

- Drain Current (A)I

D

0

1000

2000

3000

4000

5000

6000

7000

02468

C

rss

C

oss

C

iss

V

DS

- Drain-to-Source Voltage (V)

C - Capacitance (pF)

0.6

0.9

1.2

1.5

- 50 - 25 0 25 50 75 100 125 150

V

GS

= 4.5 V

I

D

= 8.0 A

T

J

- Junction Temperature (°C)

(Normalized)

- On-ResistanceR

DS(on)

SI4965DY-T1-E3

SI4965DY-T1-E3

Products related to this Datasheet