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PBSS5540X,135
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
2004 Nov 04
6
NXP Semico
nductors
Product dat
a sheet
40 V
, 5 A
PNP low V
CEsat
(BISS) transistor
PBSS5540X
006aaa233
10
1
10
2
10
3
Z
th
(K/W)
10
−
1
10
−
5
10
10
−
2
10
−
4
10
2
10
−
1
t
p
(s)
10
−
3
10
3
1
(5)
(6)
(7)
(8)
(9)
(10)
(1)
(2)
(3)
(4)
Fig.4 Transient thermal impeda
nce as a function of pulse
time; typical values
.
(1)
δ
= 1.
(2)
δ
= 0.
75.
(3)
δ
= 0.5.
(4)
δ
= 0.33.
(5)
δ
= 0.2.
(6)
δ
= 0.1.
(7)
δ
= 0.05.
(8)
δ
= 0.02.
(9)
δ
= 0.01.
(10)
δ
= 0.
Mounted on F
R4 printed-
circuit boar
d; mounti
ng pad for coll
ector 1 cm
2
.
006aaa234
10
1
10
2
10
3
Z
th
(K/W)
10
−
1
10
−
5
10
10
−
2
10
−
4
10
2
10
−
1
t
p
(s)
10
−
3
10
3
1
(6)
(7)
(8)
(9)
(10)
(1)
(5)
(4)
(3)
(2)
Fig.5 Transient thermal impeda
nce as a function of pulse
time; typical values
.
(1)
δ
= 1.
(2)
δ
= 0.
75.
(3)
δ
= 0.5.
(4)
δ
= 0.33.
(5)
δ
= 0.2.
(6)
δ
= 0.1.
(7)
δ
= 0.05.
(8)
δ
= 0.02.
(9)
δ
= 0.01.
(10)
δ
= 0.
Mounted on F
R4 printed-
circuit boar
d; mounti
ng pad for coll
ector 6 cm
2
.
2004 Nov 04
7
NXP Semico
nductors
Product dat
a sheet
40 V
, 5 A
PNP low V
CEsat
(BISS) transistor
PBSS5540X
CHARACTERISTICS
T
amb
=
25
°
C unless otherwise spec
ified.
Note
1.
Pulse test
: t
p
≤
300
μ
s;
δ
≤
0.02.
SYMBOL
PARAMETER
CONDITIONS
MIN.
T
YP.
MAX.
UNIT
I
CBO
collector-b
ase cut-of
f current
V
CB
=
−
30
V;
I
E
= 0 A
−
−
−
100
nA
V
CB
=
−
30
V;
I
E
= 0
A;
T
j
=
150
°
C
−
−
−
50
μ
A
I
EBO
emitter-base cut-off current
V
EB
=
−
5
V;
I
C
= 0 A
−
−
−
100
nA
h
FE
DC current gain
V
CE
=
−
2
V;
I
C
=
−
0.5
A
250
−
−
V
CE
=
−
2 V
; I
C
=
−
1
A;
note
1
200
−
−
V
CE
=
−
2 V
; I
C
=
−
2
A;
note
1
150
−
−
V
CE
=
−
2
V;
I
C
=
−
5
A;
note
1
50
−
−
V
CEsat
collector-emitt
er saturation
voltage
I
C
=
−
0.5
A; I
B
=
−
5
mA
−
−
120
mV
I
C
=
−
1
A; I
B
=
−
10
mA
−
−
170
mV
I
C
=
−
2
A; I
B
=
−
200
mA
−
−
160
mV
I
C
=
−
4
A; I
B
=
−
200
mA;
note
1
−
−
340
mV
I
C
=
−
5
A; I
B
=
−
500
mA;
note
1
−
−
375
mV
R
CEsat
equivalent on-
resistance
I
C
=
−
5
A; I
B
=
−
500
mA;
note
1
−
45
75
m
Ω
V
BEsat
base-emitter saturation
voltage
I
C
=
−
4
A; I
B
=
−
200
mA;
note
1
−
−
−
1.1
V
I
C
=
−
5
A; I
B
=
−
500
mA;
note
1
−
−
−
1.2
V
V
BEon
base-emitter turn-on voltage
V
CE
=
−
2
V;
I
C
=
−
2 A
−
−
−
1.0
V
f
T
transition frequ
ency
V
CE
=
−
10
V;
I
C
=
−
0.1
A;
f
=
100
MHz
60
−
−
MHz
C
c
collector cap
acita
nce
V
CB
=
−
10
V;
I
E
=
i
e
= 0
A;
f
= 1
MHz
−
−
105
pF
2004 Nov 04
8
NXP Semico
nductors
Product dat
a sheet
40 V
, 5 A
PNP low V
CEsat
(BISS) transistor
PBSS5540X
V
CE
(V)
0
−
2
−
1.5
−
0.5
−
1
001aaa157
−
4
−
2
−
6
−
8
I
C
(A)
0
(1)
(2)
(3)
(4)
(5)
Fig.6
Collector cur
rent as a func
tion of
collector-emitter volt
age; typical value
s.
(1)
I
B1
=
−
11 mA.
(2)
I
B2
=
−
22 mA.
(3)
I
B3
=
−
33 mA.
(4)
I
B4
=
−
44 mA.
(5)
I
B5
=
−
55 mA.
001aaa158
−
0.4
−
0.8
−
1.2
V
BE
(V)
0
I
C
(mA)
−
10
−
1
−
10
4
−
10
3
−
1
−
10
2
−
10
(1)
(2)
(3)
Fig.7
Base-emitte
r voltage as a functio
n of
collector current;
typical
values.
(1)
T
amb
=
−
55
°
C.
(2)
T
amb
= 25
°
C.
(3)
T
amb
= 100
°
C.
V
CE
=
−
2 V.
001aaa159
400
600
200
800
1000
h
FE
0
I
C
(mA)
−
10
−
1
−
10
4
−
10
3
−
1
−
10
2
−
10
(1)
(2)
(3)
Fig.8
DC current ga
in as a function of collect
or
current; ty
pical values.
(1)
T
amb
= 100
°
C.
(2)
T
amb
= 25
°
C.
(3)
T
amb
=
−
55
°
C.
V
CE
=
−
2 V.
001aaa160
I
C
(mA)
−
10
−
1
−
10
4
−
10
3
−
1
−
10
2
−
10
10
−
1
1
10
10
2
R
CEsat
(
Ω
)
10
−
2
(1)
(2)
(3)
Fig.9
Equivalent on-re
sistance as a functio
n of
collector current;
typical
values.
(1)
T
amb
= 100
°
C.
(2)
T
amb
= 25
°
C.
(3)
T
amb
=
−
55
°
C.
I
C
/I
B
= 20.
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
PBSS5540X,135
Mfr. #:
Buy PBSS5540X,135
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT TRANS BISS TAPE-13
Lifecycle:
New from this manufacturer.
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