IXFN140N30P Datasheet IXFN140N30P | P1-P3

DS99571F(05/08)

Polar

TM

Power MOSFET

HiPerFET

TM

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

IXFN140N30P

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified) Min. Typ. Max.

BV

DSS

V

GS

= 0V, I

D

= 3mA 300 V

V

GS(th)

V

DS

= V

GS

, I

D

= 8mA 3.0 5.0 V

I

GSS

V

GS

= ±20V, V

DS

= 0V ±200 nA

I

DSS

V

DS

= V

DSS

25 μA

V

GS

= 0V T

J

= 125°C 1 mA

R

DS(on)

V

GS

= 10V, I

D

= 70A, Note 1 20 24 mΩ

V

DSS

= 300V

I

D25

= 110A

R

DS(on)

≤≤

≤ 24m

ΩΩ

Ω

t

rr

≤≤

≤ 200ns

S

G

S

D

miniBLOC, SOT-227 B

E153432

G = Gate D = Drain

S = Source

Either Source terminal at miniBLOC can be used

as Main or Kelvin Source

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25°C to 150°C 300 V

V

DGR

T

J

= 25°C to 150°C, R

GS

= 1MΩ 300 V

V

GSS

Continuous ±20 V

V

GSM

Transient ± 30 V

I

D25

T

C

= 25°C 110 A

I

LRMS

External lead current limit 100 A

I

DM

T

C

= 25°C, pulse width limited by T

JM

300 A

I

A

T

C

= 25°C70A

E

AS

T

C

= 25°C5J

dV/dt I

S

≤ I

DM

, V

DD

≤ V

DSS

,T

J

≤ 150°C 20 V/ns

P

D

T

C

= 25°C 700 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

T

L

1.6mm (0.062 in.) from case for 10s 300 °C

V

ISOL

50/60 Hz, RMS t = 1min 2500 V~

I

ISOL

≤ 1mA t = 1s 3000 V~

M

d

Mounting torque 1.5/13 Nm/lb.in.

Terminal connection torque 1.3/11.5 Nm/lb.in.

Weight 30 g

Features

• Fast intrinsic diode

• Avalanche Rated

• Low R

DS(ON)

and Q

G

• Low package inductance

Advantages

• Easy to mount

• Space savings

• High power density

Applications

• DC-DC coverters

• Battery chargers

• Switched-mode and resonant-mode

power supplies

• DC choppers

• AC and DC motor control

• Uninterrupted power supplies

• High speed power switching

applications

IXYS reserves the right to change limits, test conditions, and dimensions.

IXFN140N30P

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified) Min. Typ. Max.

g

fs

V

DS

= 20V, I

D

= 70A, Note 1 50 90 S

C

iss

14.8 nF

C

oss

V

GS

= 0V, V

DS

= 25V, f = 1MHz 1830 pF

C

rss

55 pF

t

d(on)

30 ns

t

r

30 ns

t

d(off)

100 ns

t

f

20 ns

Q

g(on)

185 nC

Q

gs

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 70A 72 nC

Q

gd

60 nC

R

thJC

0.18 °C/W

R

thCS

0.05 °C/W

Source-Drain Diode Characteristic Values

(T

J

= 25°C, unless otherwise specified)

Symbol Test Conditions Min. Typ. Max.

I

S

V

GS

= 0V 140 A

I

SM

Repetitive, pulse width limited by T

JM

560 A

V

SD

I

F

= 70A, V

GS

= 0V, Note 1 1.3 V

t

rr

200 ns

Q

RM

0.6 μC

I

RM

6.0 A

Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Resistive Switching Times

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 70A

R

G

= 1Ω (External)

I

F

= 25A, -di/dt = 100A/μs

V

R

= 100V

SOT-227B Outline

IXFN140N30P

Fig. 1. Output Characteristics

@ 25ºC

0

20

40

60

80

100

120

140

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

8V

6V

5V

7V

Fig. 2. Extended Output Characteristics

@ 25ºC

0

40

80

120

160

200

240

280

0 2 4 6 8 10 12 14 16 18 20

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

8V

7V

5V

6V

Fig. 3. Output Characteristics

@ 125ºC

0

20

40

60

80

100

120

140

012345678

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

8V

7V

6V

5V

Fig. 4. R

DS(on)

Normalized to I

D

= 70A Value

vs. Junction Temperature

0.4

0.8

1.2

1.6

2.0

2.4

2.8

3.2

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 140A

I

D

= 70A

Fig. 5. R

DS(on)

Normalized to I

D

= 70A Value

vs. Drain Current

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

2.8

3.0

0 40 80 120 160 200 240 280

I

D

- Amperes

R

DS(on)

- Normalized

T

J

= 125ºC

T

J

= 25ºC

V

GS

= 10V

Fig. 6. Maximum Drain Current vs.

Case Temperature

0

10

20

30

40

50

60

70

80

90

100

110

120

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centigrade

I

D

- Amperes

External Lead Current Limit

IXFN140N30P

IXFN140N30P

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